arXiv subjects

Pedram Khakbaz

Publications and source records attributed to Pedram Khakbaz.

4 recordsLinked to original sources

arXiv2026

Towards ultra-scaled nanoelectronics using the zipper material system $Bi_2O_2Se/Bi_2SeO_5$

Two-dimensional (2D) materials could overcome the scaling bottleneck of nanoelectronics by enabling atomically thin channels, superior electrostatic control, and reduced short-channel effects. However, progress is limited by the lack of semiconductor–insulator interfaces being simultaneously scalable, stable, and reliable. Conventional 2D interfaces are often low quality or require transferring dissimilar materials, limiting reproducibility and scalability. We show that the zipper heterostructure formed by the high-mobility 2D semiconductor Bi 2 O 2 Se and its native high- κ oxide Bi 2 SeO 5 addresses these challenges, providing an atomically sharp, chemically matched interface with excellent electrostatics and promising scaling potential. We further present the first comprehensive multiscale assessment of Bi 2 O 2 Se/Bi 2 SeO 5 transistors targeting thermal stability, reliability, and scalability by linking atomic-scale structure and defects to device-level behavior across four transistor generations (top-gated, fin, and two gate-all-around architectures). Benchmarking against IRDS-2035 targets indicates that Bi 2 O 2 Se/Bi 2 SeO 5 devices could deliver high drive current with low gate leakage under aggressive scaling, potentially surpassing the targets in the upper-bound region of the sensitivity analysis. Finally, we identify oxygen-related oxide defects as the dominant origin of hysteresis consistent with a beneficial role of encapsulation and oxygen-rich annealing. Together, our findings support the potential of this zipper material system as a technologically-credible and manufacturing-relevant platform for future nanoelectronics.

cond-mat.mtrl-sci↗

arXiv2025

Hysteresis Measurements as a Diagnostic Tool: A Systematic Approach for Stability Benchmarking and Performance Projection of 2D-Materials-Based MOSFETs

Judging by its omnipresence in the literature, the hysteresis observed in the transfer characteristics of emerging transistors based on 2D-materials is widely accepted as an important metric related to the device quality. The hysteresis is often reported with attributes like "negligible" or "small" without giving any specifics as to how this was determined and against what reference the measured values were compared to. Quite surprisingly, there appears to be only a fragmentary understanding of the mechanisms actually contributing to hysteresis and the sensitivity of the actual measurement on various experimental parameters. We attempt to close this gap by first providing a comprehensive theoretical analysis of the dominant mechanisms contributing to hysteresis: charge trapping by defects from the channel or the gate, the drift of mobile charges, and eventually ferroelectricity. We continue by suggesting methods to experimentally distinguishing between these phenomena. Based on these discussions it becomes clear that previously reported hysteresis values have little meaning as they have been non-systematically recorded under arbitrary conditions. In order to resolve this predicament, we propose a standardized hysteresis measurement scheme to establish the hysteresis as a comparable metric for the assessment of device stability. Our standardized scheme ensures that hysteresis data can be effectively compared across different technologies and, most importantly, provide a means to extrapolate data obtained on thicker prototypes to subnanometer equivalent oxide thicknesses. This facilitates the systematic benchmarking of insulator/channel combinations in terms of stability, which thereby enables the screening of material systems for more stable and reliable 2D-material-based MOSFETs.

physics.app-ph↗

arXiv2025

How to Identify Suitable Gate Dielectrics for Transistors based on Two-Dimensional Semiconductors

The recent progress in nanosheet transistors has established two-dimensional (2D) semiconductors as viable candidates for future ultra-scaled electronic devices. Next to reducing contact resistance, identifying good gate dielectrics is a fundamental challenge, as the dielectric/channel interface dramatically impacts virtually all performance parameters. While several promising gate dielectrics have recently been reported, the evaluation of their quality and suitability is often fragmentary and focused on selected important performance metrics of the gate stack, such as the capacitive gate control, leakage currents, reliability, and ease of fabrication and integration. However, identifying a suitable gate stack is a complex problem that has not yet been approached systematically. In this perspective, we aim to formulate general criteria for good gate dielectrics.

physics.app-ph↗

arXiv2025

Influence of the Effective Mass on ab initio Phonon-limited Electron Mobility of GaAs

We present a comprehensive ab initio study of the influence of band structure corrections, particularly the electron effective mass, on the phonon-limited electron drift and Hall mobilities of GaAs. Our approach is based on the DFT+$U$ method, combined with an iterative solution of the linearized Boltzmann transport equation using the Wannier interpolation technique. We show how this framework allows for accurate refinements of the electronic band structure and phonon dispersion, leading to improved predictions for transport properties. In particular, by varying the Hubbard parameters to purposefully tune the conduction band features, allowing us to reproduce bands with different electron effective mass, we systematically investigate the relationship between mobility and effective mass. In this context, our results show close agreement with semi-empirical relations that follow a power-law dependence. Moreover, this approach can be used to indirectly incorporate temperature effects into the band structure, enabling efficient evaluation of temperature-dependent electron mobilities. Our mobility results exhibit good agreement with experimental data and are comparable to previously reported values obtained using the computationally expensive GW method.

cond-mat.mtrl-sci↗