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Patrick Sahuquet

Publications and source records attributed to Patrick Sahuquet.

2 recordsLinked to original sources

Tunneling Spectroscopy Study of Low Baked Bulk Niobium for Superconducting RF Cavity Applications

Point-contact tunneling (PCT) spectroscopy was used to probe the local superconducting properties of cavity-grade niobium following surface treatments representative of superconducting radio-frequency (SRF) cavities. Electropolished (EP) samples were compared with samples baked at 120~$^\circ$C for 48 h and subjected to a two-step bake at 75~$^\circ$C for 2 h followed by 120~$^\circ$C for 48 h. Although the superconducting gap $Δ$ is predominantly distributed around the bulk Nb value (~1.5 meV), regions exhibiting strongly suppressed gaps (minigaps) are observed in 15--29% of junctions on EP samples. Their occurrence decreases to 6% after the 120~$^\circ$C bake and to only 1% after the two-step treatment. Spectra exhibiting minigaps are well described by the Usadel proximity-effect model, consistent with superconducting Nb coupled to normal regions that we attribute to hydride formation. These results provide direct microscopic evidence that low-temperature baking suppresses regions of degraded surface superconductivity in cavity-grade Nb. The pronounced reduction achieved by the two-step bake further supports a link between hydride-related proximity effects and the surface superconducting properties governing SRF cavity performance.

cond-mat.supr-con

Multipacting mitigation by atomic layer deposition: the case study of Titanium Nitride

This study investigates the use of Atomic Layer deposition (ALD) to mitigate multipacting phenomena inside superconducting radio frequency (SRF) cavities used in particle accelerators. The unique ALD capability to control the film thickness down to the atomic level on arbitrary complex shape objects enable the fine tuning of TiN film resistivity and total electron emission yield (TEEY) from coupons to devices. This level of control allows us to adequately choose a TiN film thickness that provide both a high resistivity to prevent Ohmic losses and low TEEY to mitigate multipacting for the application of interest. The methodology presented in this work can be scaled to other domain and devices subject to RF fields in vacuum and sensitive to multipacting or electron discharge processes with their own requirements in resistivities and TEEY values

physics.app-ph