Patrick Devaney | arXiv Science

arXiv2026

Quantum-Well-Metasurface to Maximize Nonlinear Polarization

Nonlinear frequency conversion unlocks technologies ranging from telecommunications to quantum computation; however, weak nonlinearities and architectures that resist miniaturization currently limit devices. Here, we combine a bandstructure-engineered GaAs/AlGaAs heterostructure with a high quality factor dielectric metasurface to simultaneously tailor the intrinsic nonlinear susceptibility and optimize the electromagnetic field within the heterostructure. By engineering a resonant interband transition, we realize a large second-order nonlinear tensor element, 1.6 nm/V at 1.57 um wavelength. We then make it free-space-accessible and boost the effective nonlinearity to ~ 14 nm/V using a metasurface patterned on the material. Our proof-of-concept experiment establishes that interband transition engineering and metasurfaces accessing otherwise unusable nonlinear tensor elements enable giant effective nonlinearities in the near-infrared to visible spectrum. This addresses material and device-level constraints in nonlinear photonics, providing a scalable route to compact, efficient devices.

physics.optics↗

arXiv2026

Enhanced Interband Optical Nonlinearities from Coupled Quantum Wells

The recent, rapid advances in nonlinear chipscale nanophotonics in the visible and near-infrared have been largely driven by manipulating the local dielectric environment proximate to decades-old workhorse bulk nonlinear optical materials, rather than increasing the inherent strength of their nonlinear response. While proposed decades ago, we demonstrate the first experimental realization of a new class of designer nonlinear materials that leverage the interband optical transition in asymmetric structures to provide strong second order susceptibility, $\chi^{(2)}$. Using simple AlGaAs/GaAs coupled quantum wells operating in the near-infrared as a prototype, we observed strong second harmonic generation enhancement of 1550 nm to 775 nm over bulk controls. Extracted $\chi^{(2)}$ values were as high as 2750 pm/V, which is $>$7x that of bulk GaAs. Furthermore, measured susceptibilities agreed well with quantum mechanical calculations of $\chi^{(2)}$ using layer profiles extracted from electron microscopy. Growth interruptions were employed to improve interfacial abruptness in response to electron microscopy characterization, resulting in increased $\chi^{(2)}$ toward the simulation predictions for ideal heterointerfaces. More complex layer designs showed predicted $\chi^{(2)}$ up to 7 nm/V. Such materials are anticipated to find myriad applications, including entangled photon generation at telecommunications wavelengths for chipscale quantum information processing.

physics.optics↗