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Patrick Bethke

Publications and source records attributed to Patrick Bethke.

5 recordsLinked to original sources

Exchange interaction in gate-defined quantum dots beyond the Hubbard model

A quantitative description of the exchange interaction in quantum dots is relevant for modeling gate operations of spin qubits. By measuring the amplitude and frequency of exchange-driven qubit state oscillations, we measure the detuning dependence of the exchange coupling in a GaAs double quantum dot over three orders of magnitude. Both 1D and 3D full configuration interaction simulations can replicate the observed behavior. Extending a Hubbard model by including excited states increases the range of detuning where it provides a good fit, thus elucidating the underlying physics.

cond-mat.mes-hall

High-fidelity gate set for exchange-coupled singlet-triplet qubits

In order to enable semiconductor-based quantum computing with many qubits, issues like residual interqubit coupling and constraints from scalable control hardware need to be tackled to retain the high gate fidelities demonstrated in current single-qubit devices. Here, we focus on two exchange-coupled singlet-triplet spin qubits, considering realistic control hardware as well as Coulomb and exchange coupling that cannot be fully turned off. Using measured noise spectra, we optimize realistic control pulses and show that two-qubit (single-qubit) gate fidelities of 99.90\% ($\ge 99.69\%$) can be reached in GaAs, while 99.99\% ($\ge 99.95\%$) can be achieved in Si.

quant-ph

Measurement of back-action from electron spins in a gate defined GaAs double quantum dot coupled to a mesoscopic nuclear spin bath

Decoherence of a quantum system arising from its interaction with an environment is a key concept for understanding the transition between the quantum and classical world as well as performance limitations in quantum technology applications. The effects of large, weakly coupled environments are often described as a classical, fluctuating field whose dynamics is unaffected by the qubit, whereas a fully quantum description still implies some back-action from the qubit on the environment. Here we show direct experimental evidence for such a back-action for an electron-spin-qubit in a GaAs quantum dot coupled to a mesoscopic environment of order $10^6$ nuclear spins. By means of a correlation measurement technique, we detect the back-action of a single qubit-environment interaction whose duration is comparable to the qubit's coherence time, even in such a large system. We repeatedly let the qubit interact with the spin bath and measure its state. Between such cycles, the qubit is reinitialized to different states. The correlations of the measurement outcomes are strongly affected by the intermediate qubit state, which reveals the action of a single electron spin on the nuclear spins.

quant-ph

A Machine Learning Approach for Automated Fine-Tuning of Semiconductor Spin Qubits

While spin qubits based on gate-defined quantum dots have demonstrated very favorable properties for quantum computing, one remaining hurdle is the need to tune each of them into a good operating regime by adjusting the voltages applied to electrostatic gates. The automation of these tuning procedures is a necessary requirement for the operation of a quantum processor based on gate-defined quantum dots, which is yet to be fully addressed. We present an algorithm for the automated fine-tuning of quantum dots, and demonstrate its performance on a semiconductor singlet-triplet qubit in GaAs. The algorithm employs a Kalman filter based on Bayesian statistics to estimate the gradients of the target parameters as function of gate voltages, thus learning the system response. The algorithm's design is focused on the reduction of the number of required measurements. We experimentally demonstrate the ability to change the operation regime of the qubit within 3 to 5 iterations, corresponding to 10 to 15 minutes of lab-time.

cond-mat.mes-hall

Tuning methods for semiconductor spin--qubits

We present efficient methods to reliably characterize and tune gate-defined semiconductor spin qubits. Our methods are designed to target the tuning procedures of semiconductor double quantum dot in GaAs heterostructures, but can easily be adapted to other quantum-dot-like qubit systems. These tuning procedures include the characterization of the inter-dot tunnel coupling, the tunnel coupling to the surrounding leads and the identification of the various fast initialization points for the operation of the qubit. Since semiconductor-based spin qubits are compatible with standard semiconductor process technology and hence promise good prospects of scalability, the challenge of efficiently tuning the dot's parameters will only grow in the near future, once the multi-qubit stage is reached. With the anticipation of being used as the basis for future automated tuning protocols, all measurements presented here are fast-to-execute and easy-to-analyze characterization methods. They result in quantitative measures of the relevant qubit parameters within a couple of seconds, and require almost no human interference.

cond-mat.mes-hall