arXiv subjects

Panjun Feng

Publications and source records attributed to Panjun Feng.

7 recordsLinked to original sources

arXiv2025

Quantum anomalous Hall effect with high Chern number in two dimensional ferromagnets Ti2TeSO

Two-dimensional Chern insulators have emerged as crucial platforms for the realization of the quantum anomalous Hall effect, and as such have attracted significant interest in spintronics and topological quantum physics due to their unique coexistence of spontaneous magnetization and nontrivial topological characteristics. Nonetheless, substantial challenges persist in such systems, encompassing spin entanglement and the possession of only one edge state (Chern number C=1), which significantly hinder their practical applications. Herein, we propose a novel two-dimensional ferromagnetic half-semi-Weyl-metal, monolayer Ti2TeSO, that exhibits exceptional electronic properties. Its majority spin channel possesses only a pair of symmetry-protected Weyl points at the Fermi level, while the states of minority one locate far away from the Fermi level. When spin-orbit coupling is included, a substantial band gap of ~ 92.8 meV is induced at the Weyl points. Remarkably, the emergence of dual dissipationless chiral edge channels and a quantized Hall conductivity plateau at 2e2/h collectively establish monolayer Ti2TeSO as a high-Chern-number insulator with C=2. Furthermore, it is demonstrated that valley polarization can be achieved and controlled through the application of strain and the manipulation of the direction of magnetization. The first-principles calculations, in conjunction with Monte Carlo simulations, yield a Curie temperature of 161 K for monolayer Ti2TeSO, thereby indicating the plausibility of coexistence of valley polarization and topological states at elevated temperatures. These findings could provide a foundation for the development of multi-channels dissipationless transport devices and nonvolatile multistate memory architectures.

cond-mat.mes-hall↗

arXiv2025

Stacking-induced type-II quantum spin Hall insulators with high spin Chern number in unconventional magnetism

While stacking two type-I quantum spin Hall insulators typically results in a trivial insulator, the behavior of the assembly of type-II quantum spin Hall insulators remains unexplored. In this article, based on calculations of a lattice model, we demonstrate that stacking two type-II quantum spin Hall insulators does not yield a trivial insulator but instead forms a nontrivial quantum spin Hall insulator with high spin Chern number. In this phase, two pairs of topological edge states with opposite chirality and polarization coexist at the boundary. Our calculations further reveal that the quantized spin Hall conductivity of the bilayer is twice that of the monolayer. When U(1) symmetry is present, the high spin Chern number phase remains stable; when U(1) symmetry is broken, it persists over a broad parameter range. Furthermore, based on first-principles electronic structure calculations, we demonstrate that bilayer Nb$_2$SeTeO is a type-II quantum spin Hall insulator with a high spin Chern number in altermagnetism and unconventional compensated magnetism. Moreover, extending this strategy to multilayer stacks naturally leads to a quantum spin Hall insulator with a higher spin Chern number. Our work not only deepens the distinction between type-I and type-II quantum spin Hall insulators, but also offers a route toward realizing highly quantized spin Hall conductivity.

cond-mat.mes-hall↗

arXiv2025

Type-II quantum spin Hall insulator

Quantum spin Hall effect is usually realized in two-dimensional materials with time-reversal symmetry, but whether it can be realized without symmetry protection remains unexplored. Here, we propose type-II quantum spin Hall insulator with quantized spin Hall conductivity, whose edge states with opposite chirality and polarization, distributed in different Brillouin zone regions, connect the conduction and valence bands at the boundary. Thus, the type-II quantum spin Hall insulator does not require any symmetry protection other than translational symmetry. Then, based on symmetry analysis and the first-principles electronic structure calculations, we demonstrate that type-II quantum spin Hall insulator can be realized in both altermagnetic materials and Luttinger compensated magnetic materials. Furthermore, based on lattice model, we find that as long as $U(1)$ symmetry exists, type-II quantum spin Hall insulator phase can always exist stably. However, if $U(1)$ symmetry is broken, type-II quantum spin Hall insulator phase transforms into an obstructed atomic insulator phase as spin-orbit coupling effect is enhanced. Therefore, our work not only proposes a new mechanism for realizing the quantum spin Hall effect, but also enriches the types of unconventional magnetic topological phases.

cond-mat.mes-hall↗

arXiv2022

Two-dimensional binary transition metal nitride $M$N$_4$ ($M$ = V, Cr, Mn, Fe, Co) with a graphene-like structure and strong magnetic properties

Binary transition metal nitride with a graphene-like structure and strong magnetic properties is rare. Based on the first-principles calculations, we design two kinds of $M$N$_4$ ($M$ =transition metal) monolayers, which are transition metal nitrides with a planar structure, made up of $M$N$_4$ units aligned in the rhombic and square patterns. The two structural lattices have robust stability and good compatibility with different metal atoms, and the underlying mechanism is the combination of $sp^2$ hybridization, coordinate bond, and $\pi$ conjugation. With the metal atom changing from V, Cr, Mn, Fe to Co, the total charge of $M$N$_4$ system increases by one electron in turn, which results in continuous adjustability of the electronic and magnetic properties. The planar ligand field is another feature of the two $M$N$_4$ lattices, which brings about the special splitting of five suborbitals of 3$d$ metal atom and gives rise to strong magnetism. Moreover, room-temperature ferromagnetism in square-CoN$_4$ monolayer with the Curie temperatures of 321 K is determined by solving the Heisenberg model combined with Monte Carlo method.

cond-mat.mtrl-sci↗

arXiv2022

High-temperature ferromagnetism in two-dimensional material MnSn originated from interlayer coupling

MnSn monolayer synthesized recently is a novel two-dimensional ferromagnetic material with a hexagonal lattice, in which three Mn atom come together to form a trimer, making it remarkably different from other magnetic two-dimensional materials. Most impressively, there happens a sharp increase of Curie temperature from 54 K to 225 K when the number of layers increase from 1 to 3. However, no quantitative explanation is reported in previous studies. Herein, by means of first-principle calculations method and Monte carlo method, we demonstrate that strong interlayer ferromagnetic coupling is the essential role in enhancing its critical temperature, which act as a magnetic field to stabilize the ferromagnetism in the MnSn multilayers.

cond-mat.mtrl-sci↗

arXiv2022

Prediction of single-atom-thick transition metal nitride CrN$_4$ with a square-planar network and high-temperature ferromagnetism

Single-atom-thick two-dimensional materials such as graphene usually have a hexagonal lattice while the square-planar lattice is uncommon in the family of two-dimensional materials. Here, we demonstrate that single-atom-thick transition metal nitride CrN$_4$ monolayer is a stable free-standing layer with a square-planar network. The stability of square-planar geometry is ascribed to the combination of N=N double bond, Cr-N coordination bond, and $\pi$-d conjugation, in which the double $\pi$-d conjugation is rarely reported in previous studies. This mechanism is entirely different from that of the reported two-dimensional materials, leading to lower formation energy and more robust stability compared to the synthesized g-C$_3$N$_4$ monolayer. On the other hand, CrN$_4$ layer has a ferromagnetic ground state, in which the ferromagnetic coupling between two Cr atoms is mediated by electrons of the half-filled large $\pi$ orbitals from $\pi$-d conjugation. The high-temperature ferromagnetism in CrN$_4$ monolayer is confirmed by solving the Heisenberg model with Monte Carlo method.

cond-mat.mtrl-sci↗

arXiv2022

Achieving high-temperature ferromagnetism by means of magnetic ions dimerization

Magnetic two-dimensional materials have potential application in next-generation electronic devices and have stimulated extensive interest in condensed matter physics and material fields. However, how to realize high-temperature ferromagnetism in two-dimensional materials remains a great challenge in physics. Herein, we propose an effective approach that the dimerization of magnetic ions in two-dimensional materials can enhance the exchange coupling and stabilize the ferromagnetism. Manganese carbonitride Mn$_2$N$_6$C$_6$ with a planar monolayer structure is taken as an example to clarify the method, in which two Mn atoms are gathered together to form a ferromagnetic dimer of Mn atoms and further these dimers are coupled together to form the overall ferromagnetism of the two-dimensional material. In Mn$_2$N$_6$C$_6$ monolayer, the near-room-temperature ferromagnetism with the Curie temperature of 272.3 K is determined by solving Heisenberg model using Monte Carlo simulations method.

cond-mat.mtrl-sci↗