arXiv subjects

Pai Li

Publications and source records attributed to Pai Li.

11 recordsLinked to original sources

arXiv2026

U-Shaped Fermi-Level Dependence of Point-Defect Aggregation Enthalpy in Silicon

Point defects govern the electronic and structural behavior of silicon, yet their configuration and energy depend on both the charge state and the Fermi level (EF). Using an unbiased global structure search with first-principles calculations, we screened more than 1,500 candidate structures, covering intrinsic defects and C, H, O, N, P, and B impurities in charge states from -2 to +2. The reaction enthalpy of defect aggregation depends on EF in a U shape, being strongest where the net charge transferred during the reaction vanishes and weaker toward both band edges. This U arises because complexes are more charge-neutral than their isolated constituents, so the net charge transfer changes sign across the gap. The point where this sign change occurs is set by the transition levels of the specific defects. For typical reactions, the driving force is tunable by 0.3-0.5 eV, which shifts the equilibrium complex concentration by five to eight orders of magnitude at room temperature. Our results make the Fermi level a practical lever for defect engineering in as-grown and irradiated silicon.

cond-mat.mtrl-sci↗

arXiv2026

Crystal Structure Prototype Identification via Element-Mapped Rotation-Invariant Descriptors

We present a method for identifying crystal structure prototypes from local atomic environments. A center atom and its neighbors within a distance-normalized cutoff are mapped to anonymous element types (A/B/C/D) by proximity, and a NEP-style descriptor-radial Chebyshev moments plus contracted spherical-harmonic (S-vector) invariants-is computed per type block. The descriptor is rotation-invariant by construction (MLFF-style contraction with analytic normalization constants), so no rotation augmentation is needed. A trainable block-diagonal projection compresses the 316-dimensional raw basis into a 168-dimensional learned descriptor fed to a three-layer MLP. The model classifies each atom into one of 271 AFLOW crystal structure prototypes or the amorphous class (272 classes), reaching 99.38% accuracy on 538,190 per-atom samples. The full pipeline (descriptor extraction + inference) runs on a single CPU core at 3.9 s per 10,000 atoms, making it suitable for website deployment.

cond-mat.mtrl-sci↗

arXiv2026

3D Cloud Component Analysis of Atomic Structures

We present a method for decomposing atomic structures into physically meaningful components by converting discrete atomic coordinates into continuous three-dimensional density fields. Each element is represented by a Gaussian-smeared density map with values ranging from 0 to 1, computed efficiently through a bin-then-blur approach with periodic boundary conditions. The sum of all element densities, truncated at unity, defines the material region; its complement defines the vacuum. Every voxel is first assigned a chemical formula from the set of elements present above a threshold; the resulting formula map is then cleaned so that only regions with a genuine bulk interior-measured by the Euclidean distance to their own boundary-survive as components. Thin surface terminations (e.g., a Ga monolayer on GaAs) and one-to-two-voxel boundary layers between two crystals are absorbed by the neighboring stable region, so the decomposition contains exactly the bulk-like chemical-formula components and the vacuum, with no surface or interface components. For each component we determine the crystal phase with a neural prototype classifier: one phase if the trusted interior atoms vote unanimously, two phases (e.g., crystalline and amorphous Si) if they split into two confident groups, in which case the component is divided into two. Interfaces and surfaces are then derived as boundaries-material-material and material-vacuum-and every atom is labeled bulk, surface, interface, or vertex, with vertex reserved for geometric corners of a component. Inside crystalline components, inner defects are detected from coordination-number and local-density deviations. We demonstrate the approach on Si/GaAs and Si/SiO2 heterojunctions, crystalline/amorphous silicon junctions, vacancy-containing crystals, and bulk crystals.

cond-mat.mtrl-sci↗

arXiv2026

Anomalous Subsurface Vacancy Stabilization Dictated by Geometry-Electronic Decoupling on Metal Surfaces

Vacancy formation energetics fundamentally govern the structural integrity and catalytic behavior of metal surfaces. Contrary to conventional coordination-dependent broken-bond models, we identify an anomalous thermodynamic inversion on close-packed surfaces across Ir, Pt, Au with face-centered cubic (FCC) lattice and Be, Zn, Cd with hexagonal close-packed (HCP) lattice, where subsurface vacancies are intrinsically more stable than surface ones. Using high-throughput DFT calculations and machine learning force fields, we demonstrate that the physical origins of this anomaly are fundamentally decoupled between the two crystal systems. For the FCC trio, pronounced surface relaxation and a profound real-space electronic localization induce directional, covalent-like intralayer bonding, materializing a "geometry-electronic decoupling" mechanism. Crucially, this unconventional thermodynamic hierarchy enables a dynamic "self-healing" mechanism on Pt(111) that preserves an intact topmost layer and prevents catalytic degradation during hydrogen evolution and oxygen reduction reactions. It also successfully decoding the critical defect threshold (~8%) for lifting the Au(100) surface reconstruction. Our work challenges classical scalar defect models and provides a fresh paradigm for engineering catalyst surface integrity.

cond-mat.mtrl-sci↗

arXiv2026

Phase transformation kinetics in MoS2 governed by S-S repulsive interactions and defect-interface compatibility

The metastable T' phase in monolayer MoS2 exhibits remarkable persistence despite a strong thermodynamic driving force toward the stable H phase. Using machine learning-accelerated molecular dynamics and first-principles calculations, we reveal that this kinetic arrest originates from repulsive S-S interactions, which impose high energy barriers during both nucleation and grain boundary propagation. While sulfur vacancies can alleviate these barriers in certain interfaces, they fail to accelerate transformation at the most stable interface, ZZ-Mo|-, due to their thermodynamic instability there. Instead, vacancies migrate into the T' phase, leaving the advancing front defect-free. Direct simulations of nanostructures confirm that H-phase nucleation initiates at corners or edges, and all observed growth fronts adopt the ZZ-Mo|- configuration, consistent with its low interfacial energy but slow kinetics. Our work establishes that phase transformation in 2D materials is governed not by global defect concentration, but by the local compatibility between defects and moving interfaces, offering a new paradigm for controlling structural transitions through interface-specific design.

cond-mat.mtrl-sci↗

arXiv2025

Artificial Intelligence-Enabled Holistic Design of Catalysts Tailored for Semiconducting Carbon Nanotube Growth

Catalyst design is crucial for materials synthesis, especially for complex reaction networks. Strategies like collaborative catalytic systems and multifunctional catalysts are effective but face challenges at the nanoscale. Carbon nanotube synthesis contains complicated nanoscale catalytic reactions, thus achieving high-density, high-quality semiconducting CNTs demands innovative catalyst design. In this work, we present a holistic framework integrating machine learning into traditional catalyst design for semiconducting CNT synthesis. It combines knowledge-based insights with data-driven techniques. Three key components, including open-access electronic structure databases for precise physicochemical descriptors, pre-trained natural language processing-based embedding model for higher-level abstractions, and physical - driven predictive models based on experiment data, are utilized. Through this framework, a new method for selective semiconducting CNT synthesis via catalyst - mediated electron injection, tuned by light during growth, is proposed. 54 candidate catalysts are screened, and three with high potential are identified. High-throughput experiments validate the predictions, with semiconducting selectivity exceeding 91% and the FeTiO3 catalyst reaching 98.6%. This approach not only addresses semiconducting CNT synthesis but also offers a generalizable methodology for global catalyst design and nanomaterials synthesis, advancing materials science in precise control.

cond-mat.mtrl-sci↗

arXiv2023

Unifying Static and Dynamic Intermediate Languages for Accelerator Generators

Compilers for accelerator design languages (ADLs) translate high-level languages into application-specific hardware. ADL compilers rely on a hardware control interface to compose hardware units. There are two choices: static control, which relies on cycle-level timing; or dynamic control, which uses explicit signalling to avoid depending on timing details. Static control is efficient but brittle; dynamic control incurs hardware costs to support compositional reasoning. Piezo is an ADL compiler that unifies static and dynamic control in a single intermediate language (IL). Its key insight is that the IL's static fragment is a refinement of its dynamic fragment: static code admits a subset of the run-time behaviors of the dynamic equivalent. Piezo can optimize code by combining facts from static and dynamic submodules, and it opportunistically converts code from dynamic to static control styles. We implement Piezo as an extension to an existing dynamic ADL compiler, Calyx. We use Piezo to implement an MLIR frontend, a systolic array generator, and a packet-scheduling hardware generator to demonstrate its optimizations and the static-dynamic interactions it enables.

cs.PL↗

arXiv2022

Understanding High-Temperature Chemical Reactions on Metal Surfaces

Chemical reactions on metal surfaces are important in various processes such as heterogeneous catalysis and nanostructure growth. At moderate or lower temperatures, these reactions generally follow the minimum energy path and temperature effects can be reasonably described by a harmonic oscillator model. At a high temperature approaching the melting point of the substrate, general behaviors of surface reactions remain elusive. In this study, by taking hydrocarbon species adsorbed on Cu(111) as a model system and performing extensive molecular dynamics simulations powered by machine learning potentials, we identify several important high-temperature effects, including local chemical environment, surface atom mobility, and substrate thermal expansion. They affect different aspects of a high-temperature surface reaction in different ways. These results deepen our understanding of high-temperature reactions.

physics.chem-ph↗

arXiv2020

Can High-Temperature Reactions Be Described by a Minimum Energy Path Model? Steric Hindrance Matters

High-temperature reactions widely exist in nature. However, they are difficult to be characterized either experimentally or computationally. The routinely used minimum energy path (MEP) model in computational modeling of chemical reactions is not justified to describe high-temperature reactions since high-energy structures are actively involved there. In this study, using CH4 decomposition on the Cu(111) surface as an example, we systematically compare MEP results with those obtained by explicitly sampling all relevant structures via ab initio molecular dynamics (AIMD) simulations at different temperatures. Interestingly, we find that, for reactions protected by a strong steric hindrance effect, the MEP is still effectively followed even at a temperature close to the Cu melting point. In contrast, without such a protection, the flexibility of surface Cu atoms can lead to a significant free energy barrier reduction at a high temperature. Accordingly, some conclusions about graphene growth mechanisms based on MEP calculations should be revisited. Physical insights provided by this study can deepen our understanding on high-temperature surface reactions.

physics.chem-ph↗

arXiv2017

Dominant Kinetic Pathways of Graphene Growth in Chemical Vapor Deposition: The Role of Hydrogen

The most popular way to produce graphene nowadays is chemical vapor deposition, where, surprisingly, H$_2$ gas is routinely supplied even though it is a byproduct itself. In this study, by identifying dominant growing pathways via multiscale simulations, we unambiguously reveal the central role hydrogen played in graphene growth. Hydrogen can saturate the edges of a growing graphene island to some extent, depending on the H$_2$ pressure. Although graphene etching by hydrogen has been observed in experiment, hydrogen saturation actually stabilizes graphene edges by reducing the detachment rates of carbon-contained species. Such a new picture well explains some puzzling experimental observations and is also instrumental in growth protocol optimization for two-dimensional atomic crystal van der Waals epitaxy.

cond-mat.mtrl-sci↗

arXiv2016

{\delta}-phosphorene: a two dimensional material with high negative Poisson's ratio

As a basic mechanical parameter, Poisson's ratio ({\nu}) measures the mechanical responses of solids against external loads. In rare cases, materials have a negative Poisson's ratio (NPR), and present an interesting auxetic effect. That is, when a material is stretched in one direction, it will expand in the perpendicular direction. To design modern nanoscale electromechanical devices with special functions, two dimensional (2D) auxetic materials are highly desirable. In this work, based on first principles calculations, we rediscover the previously proposed {\delta}-phosphorene ({\delta}-P) nanosheets [Jie Guan et al., Phys. Rev. Lett. 2014, 113, 046804] are good auxetic materials with a high NPR. The results show that the Young's modulus and Poisson's ratio of {\delta}-P are all anisotropic. The NPR value along the grooved direction is up to -0.267, which is much higher than the recently reported 2D auxetic materials. The auxetic effect of {\delta}-P originated from its puckered structure is robust and insensitive to the number of layers due to weak interlayer interactions. Moreover, {\delta}-P possesses good flexibility because of its relatively small Young's modulus and high critical crack strain. If {\delta}-P can be synthesized, these extraordinary properties would endow it great potential in designing low dimensional electromechanical devices.

cond-mat.mtrl-sci↗