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Pablo Levy

Publications and source records attributed to Pablo Levy.

4 recordsLinked to original sources

Nanowire networks' interconnection graphs from their photomicrographs

Self-assemblies of tunable units are being intensively studied as physical systems with signal-processing capabilities. Specifically, silver nanowire networks (AgNWNs) have demonstrated accumulation, non-linearity, and memory retention with multiple timescales, features that enable a wide variety of neuromorphic implementations. In this study, we aim to extract the interconnection scheme to analyze the experimentally obtained network architecture and, eventually, use it as input to a previously developed simulation platform. By post-processing photomicrographs of AgNWN, we present a pipeline optimized to extract the interconnection diagram, recognizing the intersections formed among the nanowires, to determine the associated graph for each physical sample. A graph is a collection of nodes and edges whose properties can be associated with different electrical responses. It is thus possible to study graphs' metrics, such as the degree distribution, community size, clustering coefficient, and path-length, to compare the experimental assemblies' attributes to those of topological models of reference. Small-world, modular, and scale-free are well-known structures in the field of mathematical graphs. By analyzing the degree distribution, the adjacency matrices, among other useful representation means, the experimental assemblies reveal similarities to both small-world and modular topologies. All the mentioned analyses were conducted considering the interconnection scheme obtained from zenithal-view optical images, which overestimates the number of NWs' interconnections (due to the impossibility of distinguishing real junctions from spurious cross-points between vertically displaced NWs). For that reason, this communication also studies the impact of artificially removing junctions from the resulting graphs on the previously calculated clustering coefficient and path length.

cond-mat.dis-nn

COTS MOS Dosimetry on the MeMOSat Board, Results After 2.5 Years in Orbit

We present the results after 2.5 years in or-bit of Total Ionizing Dose (TID) measurements done using Metal Oxide Semiconductor (MOS) dosimeters on the MeMOSat board. The MeMOSat board was launched on July 19th 2014 at the BugSat-1 "Tita" microsatellite developed by Satellogic to stay at LEO. We used as dosimeters p-channel Commercial Off The Shelf (COTS) MOS transistors with gate oxides of 250~nm. Before launch, a subset of transistors with similar drain current to voltage (I-V)curves where selected from a group of 100 devices. The temperature dependence of the (I-V) curves was studied to find the minimum temperature coefficient biasing point. Then, a calibration subgroup of sensors was irradiated using a $^{60}$Co gamma source to study their response to TID, showing responsivities of $\sim$75~mV/krad when the sensors are irradiated without gate bias. Also, the post irradiation response of the sensors was monitored, in order to include a correction for low dose rate irradiations, yielding 30~mV/krad. A biasing and reading circuit was developed in order to allow the reading of up to 4 sensors.The threshold voltage was monitored during different periods of the mission. After 2.5 years in orbit,the threshold voltage of the sensor mounted on the MeMOSat Board had a V$_\mathrm{T}$ shift of approximately 35~mV corresponds to a dose of 1.2~krads.

physics.ins-det

Shock-waves and commutation speed of memristors

Progress of silicon based technology is nearing its physical limit, as minimum feature size of components is reaching a mere 10 nm. The resistive switching behaviour of transition metal oxides and the associated memristor device is emerging as a competitive technology for next generation electronics. Significant progress has already been made in the past decade and devices are beginning to hit the market; however, it has been mainly the result of empirical trial and error. Hence, gaining theoretical insight is of essence. In the present work we report the striking result of a connection between the resistive switching and {\em shock wave} formation, a classic topic of non-linear dynamics. We argue that the profile of oxygen vacancies that migrate during the commutation forms a shock wave that propagates through a highly resistive region of the device. We validate the scenario by means of model simulations and experiments in a manganese-oxide based memristor device. The shock wave scenario brings unprecedented physical insight and enables to rationalize the process of oxygen-vacancy-driven resistive change with direct implications for a key technological aspect -- the commutation speed.

cond-mat.mtrl-sci

Phase diagram of La_{5/8-y}Nd_{y}Ca_{3/8}MnO_3 manganites

We report a detailed study of the electric transport and magnetic properties of the LaNdCaMnO manganite system. Substitution of LaIII by smaller NdIII ions, reduces the mean ionic radius of the A site ion. We have studied samples in the entire range between rich La and rich Nd compounds. Results of DC magnetization and resistivity show that doping destabilize the FM character of the pure La compound and triggers the formation of a phase separated state at intermediate doping. We have also found evidence of a dynamical behaviour within the phase separated state. A phase diagram is constructed, summarizing the effect of chemical substitution on the system.

cond-mat.mtrl-sci