arXiv subjects

P. See

Publications and source records attributed to P. See.

At least 19 recordsLinked to original sources

arXiv2024

Coulomb sensing of single ballistic electrons

While ballistic electrons are a key tool for applications in sensing and flying qubits, sub-nanosecond propagation times and complicated interactions make control of ballistic single electrons challenging. Recent experiments have revealed Coulomb collisions of counterpropagating electrons in a beam splitter, giving time resolved control of interactions between single electrons. Here we use remote Coulomb interactions to demonstrate a scheme for sensing single ballistic electrons. We show that interactions are highly controllable via electron energy and emission timing. We use a weakly-coupled `sensing' regime to characterise the nanoscale potential landscape of the beam splitter and the strength of the Coulomb interaction, and show multi-electron sensing with picosecond resolution.

cond-mat.mes-hall↗

arXiv2024

Formation of a lateral p-n junction light-emitting diode on an n-type high-mobility GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure

We have fabricated a device which includes two lateral p-n junctions on an n-type GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure. A section of the n-type material has been converted to p-type by removing dopants and applying a voltage to a gate placed in this region. Controlled electroluminescence from both of the p-n junctions has been demonstrated by varying the applied bias voltages. An emission peak with a width of ~8 nm is observed around 812 nm. The electroluminescence seen from both junctions is considered to originate from the GaAs quantum well layer in the device. The lithographic techniques that we have developed are compatible for further integration of gated quantum devices such as single-electron pumps to build on-demand single-photon sources.

physics.app-ph↗

arXiv2024

Statistical study and parallelisation of multiplexed single-electron sources

Increasing electric current from a single-electron source is a main challenge in an effort to establish the standard of the ampere defined by the fixed value of the elementary charge $e$ and operation frequency $f$. While the current scales with $f$, due to an operation frequency limit for maintaining accurate single-electron transfer, parallelisation of singleelectron sources is expected to be a more practical solution to increase the generated electric current $I = Nef$, where $N$ is a number of parallelised devices. One way to parallelise single-electron sources without increasing the complexity in device operation is to use a common gate. Such a scheme will require each device to have the same operation parameters for single-electron transfer. In order to investigate this possibility, we study the statistics for operation gate voltages using single-electron sources embedded in a multiplexer circuit. The multiplexer circuit allows us to measure 64 single-electron sources individually in a single cooldown. We also demonstrate the parallelisation of three single-electron sources and observe the generated current enhanced by a factor of three.

cond-mat.mes-hall↗

arXiv2024

Photon emission by hot electron injection across a lateral \textit{pn} junction

We demonstrate a method to generate photons by injecting hot electrons into a {\it pn} junction within a \ce{GaAs/AlGaAs} heterostructure. Hot electrons are generated by biasing across a mesoscopic potential in {\it n}-type region and travel toward {\it p}-type region through quantum Hall edge channel in the presence of magnetic field perpendicular to the substrate. The {\it p}-type region is created several microns away from the hot electron emitter by inducing interfacial charges using a surface gate. The energy relaxation of the hot electrons is suppressed by separating the orbitals before and after longitudinal-optical (LO) phonon emission. This technique enables the hot electrons to reach the {\it p}-type region and to recombine with induced holes followed by photon emissions. Hot electron-induced hole recombination is confirmed by a peak around \qty{810}{nm} in an optical spectrum that corresponds to excitonic recombination in a \ce{GaAs} quantum well. An asymmetric structure observed in the optical spectrum as a function of the magnetic field originates from the chiral transport of the hot electrons in the Hall edge channel. We propose the combination of our technology and on-demand single-electron source would enable the development of an on-demand single photon source that is an essential building block to drive an optical quantum circuit and to transfer quantum information for a long distance.

cond-mat.mes-hall↗

arXiv2024

Fast characterization of multiplexed single-electron pumps with machine learning

We present an efficient machine learning based automated framework for the fast tuning of single-electron pump devices into current quantization regimes. It uses a sparse measurement approach based on an iterative active learning algorithm to take targeted measurements in the gate voltage parameter space. When compared to conventional parameter scans, our automated framework allows us to decrease the number of measurement points by about an order of magnitude. This corresponds to an eight-fold decrease in the time required to determine quantization errors, which are estimated via an exponential extrapolation of the first current plateau embedded into the algorithm. We show the robustness of the framework by characterizing 28 individual devices arranged in a GaAs/AlGaAs multiplexer array, which we use to identify a subset of devices suitable for parallel operation at communal gate voltages. The method opens up the possibility to efficiently scale the characterization of such multiplexed devices to a large number of pumps.

cond-mat.mes-hall↗

arXiv2022

Time-resolved Coulomb collision of single electrons

Precise control over interactions between ballistic electrons will enable us to exploit Coulomb interactions in novel ways, to develop high-speed sensing, to reach a non-linear regime in electron quantum optics and to realise schemes for fundamental two-qubit operations on flying electrons. Time-resolved collisions between electrons have been used to probe the indistinguishability, Wigner function and decoherence of single electron wavepackets. Due to the effects of screening, none of these experiments were performed in a regime where Coulomb interactions were particularly strong. Here we explore the Coulomb collision of two high energy electrons in counter-propagating ballistic edge states. We show that, in this kind of unscreened device, the partitioning probabilities at different electron arrival times and barrier height are shaped by Coulomb repulsion between the electrons. This prevents the wavepacket overlap required for the manifestation of fermionic exchange statistics but suggests a new class of devices for studying and manipulating interactions of ballistic single electrons.

cond-mat.mes-hall↗

arXiv2019

Continuous-Variable Tomography of Solitary Electrons

A method for characterising the wave-function of freely-propagating particles would provide a useful tool for developing quantum-information technologies with single electronic excitations. Previous continuous-variable quantum tomography techniques developed to analyse electronic excitations in the energy-time domain have been limited to energies close to the Fermi level. We show that a wideband tomography of single-particle distributions is possible using energy-time filtering and that the Wigner representation of the mixed-state density matrix can be reconstructed for solitary electrons emitted by an on-demand single-electron source. These are highly localised distributions, isolated from the Fermi sea. While we cannot resolve the pure state Wigner function of our excitations due to classical fluctuations, we can partially resolve the chirp and squeezing of the Wigner function imposed by emission conditions and quantify the quantumness of the source. This tomography scheme, when implemented with sufficient experimental resolution, will enable quantum-limited measurements, providing information on electron coherence and entanglement at the individual particle level.

cond-mat.mes-hall↗

arXiv2018

Rectification in mesoscopic AC-gated semiconductor devices

We measure the rectified dc currents resulting when a 3-terminal semiconductor device with gate-dependent conductance is driven with an ac gate voltage. The rectified currents exhibit surprisingly complex behaviour as the dc source-drain bias voltage, the dc gate voltage and the amplitude of the ac gate voltage are varied. We obtain good agreement between our data and a model based on simple assumptions about the stray impedances on the sample chip, over a wide frequency range. This method is applicable to many types of experiment which involve ac gating of a non-linear device, and where an undesireable rectified contribution to the measured signal is present. Finally, we evaluate the small rectified currents flowing in tunable-barrier electron pumps operated in the pinched-off regime. These currents are at most $10^{-12}$ of the pumped current for a pump current of 100 pA. This result is encouraging for the development of tunable-barrier pumps as metrological current standards.

cond-mat.mes-hall↗

arXiv2018

Error detection in a tunable-barrier electron pump

We measure the average number of electrons loaded into an electrostatically-defined quantum dot (QD) operated as a tunable-barrier electron pump, using a point-contact (PC) charge sensor 1 micron away from the QD. The measurement of the electron number probes the QD loading dynamics even in the limit of slow gate voltage rise-times, when the pumped current is too small to measure. Using simulations we show that, with optimised QD-PC coupling, the experiment can make single-shot measurements of the number of electrons in the QD with sufficiently high fidelity to test the error rate of the electron pump with metrological precision.

cond-mat.mes-hall↗

arXiv2018

High-resolution error detection in the capture process of a single-electron pump

The dynamic capture of electrons in a semiconductor quantum dot (QD) by raising a potential barrier is a crucial stage in metrological quantized charge pumping. In this work, we use a quantum point contact (QPC) charge sensor to study errors in the electron capture process of a QD formed in a GaAs heterostructure. Using a two-step measurement protocol to compensate for $1/f$ noise in the QPC current, and repeating the protocol more than $10^{6}$ times, we are able to resolve errors with probabilities of order $10^{-6}$. For the studied sample, one-electron capture is affected by errors in $\sim30$ out of every million cycles, while two-electron capture was performed more than $10^6$ times with only one error. For errors in one-electron capture, we detect both failure to capture an electron, and capture of two electrons. Electron counting measurements are a valuable tool for investigating non-equilibrium charge capture dynamics, and necessary for validating the metrological accuracy of semiconductor electron pumps.

cond-mat.mes-hall↗

arXiv2017

LO-phonon emission rate of hot electrons from an on-demand single-electron source in a GaAs/AlGaAs heterostructure

Using a recently-developed time-of-flight measurement technique with 1 ps time resolution and electron-energy spectroscopy, we developed a method to measure the longitudinal-optical-phonon emission rate of hot electrons travelling along a depleted edge of a quantum Hall bar. A comparison of the experimental results to a single-particle model implies that the main scattering mechanism involves a two-step process via intra-Landau-level transition. We show this scattering can be suppressed by controlling the edge potential profile, and a scattering length > 1 mm can be achieved, allowing the use of this system for scalable single-electron device applications.

cond-mat.mes-hall↗

arXiv2016

Ultrafast Voltage Sampling using Single-Electron Wavepackets

We demonstrate an ultrafast voltage sampling technique using a stream of electron wavepackets. Electrons are emitted from a single-electron pump and travel through electron waveguides towards a detector potential barrier. Our electrons sample an instantaneous voltage on the gate upon arrival at the detector barrier. Fast sampling is achieved by minimising the duration that the electrons interact with the barrier, which can be made as small as a few picoseconds. The value of the instantaneous voltage can be determined by varying the gate voltage to match the barrier height to the electron energy, which is used as a stable reference. The test waveform can be reconstructed by shifting the electron arrival time against it. We argue that this method has scope to increase the bandwidth of voltage sampling to 100 GHz and beyond.

cond-mat.mes-hall↗

arXiv2015

Time-of-Flight Measurements of Single-Electron Wave Packets in Quantum-Hall Edge States

We report time-of-flight measurements on electrons travelling in quantum-Hall edge states. Hot-electron wave packets are emitted one per cycle into edge states formed along a depleted sample boundary. The electron arrival time is detected by driving a detector barrier with a square wave that acts as a shutter. By adding an extra path using a deflection barrier, we measure a delay in the arrival time, from which the edge-state velocity $v$ is deduced. We find that $v$ follows $1/B$ dependence, in good agreement with the $\vec{E} \times \vec{B}$ drift. The edge potential is estimated from the energy-dependence of $v$ using a harmonic approximation.

cond-mat.mes-hall↗

arXiv2015

The effect of split gate size on the electrostatic potential and 0.7 anomaly within one-dimensional quantum wires on a modulation doped GaAs/AlGaAs heterostructure

We study 95 split gates of different size on a single chip using a multiplexing technique. Each split gate defines a one-dimensional channel on a modulation-doped GaAs/AlGaAs heterostructure, through which the conductance is quantized. The yield of devices showing good quantization decreases rapidly as the length of the split gates increases. However, for the subset of devices showing good quantization, there is no correlation between the electrostatic length of the one dimensional channel (estimated using a saddle point model), and the gate length. The variation in electrostatic length and the one-dimensional subband spacing for devices of the same gate length exceeds the variation in the average values between devices of different length. There is a clear correlation between the curvature of the potential barrier in the transport direction and the strength of the "0.7 anomaly": the conductance value of the 0.7 anomaly reduces as the barrier curvature becomes shallower. These results highlight the key role of the electrostatic environment in one-dimensional systems. Even in devices with clean conductance plateaus, random fluctuations in the background potential are crucial in determining the potential landscape in the active device area such that nominally identical gate structures have different characteristics.

cond-mat.mes-hall↗

arXiv2015

Measurement and control of electron wave packets from a single-electron source

We report an experimental technique to measure and manipulate the arrival-time and energy distributions of electrons emitted from a semiconductor electron pump, operated as both a single-electron source and a two-electron source. Using an energy-selective detector whose transmission we control on picosecond timescales, we can measure directly the electron arrival-time distribution and we determine the upper-bound to the distribution width to be 30 ps. We study the effects of modifying the shape of the voltage waveform that drives the electron pump, and show that our results can be explained by a tunneling model of the emission mechanism. This information was in turn used to control the emission-time difference and energy gap between a pair of electrons.

cond-mat.mes-hall↗

arXiv2015

Dependence of the 0.7 anomaly on the curvature of the potential barrier in quantum wires

Ninety eight one-dimensional channels defined using split gates fabricated on a GaAs/AlGaAs heterostructure are measured during one cooldown at 1.4 K. The devices are arranged in an array on a single chip, and individually addressed using a multiplexing technique. The anomalous conductance feature known as the "0.7 structure" is studied using statistical techniques. The ensemble of data show that the 0.7 anomaly becomes more pronounced and occurs at lower values as the curvature of the potential barrier in the transport direction decreases. This corresponds to an increase in the effective length of the device. The 0.7 anomaly is not strongly influenced by other properties of the conductance related to density. The curvature of the potential barrier appears to be the primary factor governing the shape of the 0.7 structure at a given T and B.

cond-mat.mes-hall↗

arXiv2014

Statistical study of conductance properties in one-dimensional quantum wires focussing on the 0.7 anomaly

The properties of conductance in one-dimensional (1D) quantum wires are statistically investigated using an array of 256 lithographically-identical split gates, fabricated on a GaAs/AlGaAs heterostructure. All the split gates are measured during a single cooldown under the same conditions. Electron many-body effects give rise to an anomalous feature in the conductance of a one-dimensional quantum wire, known as the `0.7 structure' (or `0.7 anomaly'). To handle the large data set, a method of automatically estimating the conductance value of the 0.7 structure is developed. Large differences are observed in the strength and value of the 0.7 structure [from $0.63$ to $0.84\times (2e^2/h)$], despite the constant temperature and identical device design. Variations in the 1D potential profile are quantified by estimating the curvature of the barrier in the direction of electron transport, following a saddle-point model. The 0.7 structure appears to be highly sensitive to the specific confining potential within individual devices.

cond-mat.mes-hall↗

arXiv2014

A low-temperature device architecture for the statistical study of electrical characteristics of 256 quantum devices

Research in the field of low-temperature electronics is limited by the small number of electrical contacts available on cryogenic set ups. This not only restricts the number of devices that can be fabricated, but also the device and circuit complexity. We present an on-chip multiplexing technique which significantly increases the number of devices locally measurable on a single chip, without the modification of existing fabrication or experimental set-ups. We demonstrate the operation of the multiplexer by performing electrical measurements of 256 quantum wires formed by split-gate devices using only 19 electrical contacts on a cryogenic set-up. The multiplexer allows the measurement of many devices and enables us to perform statistical analyses of various electrical features which exist in quantum wires. We use this architecture to investigate spatial variations of electrical characteristics, and reproducibility on two separate cooldowns. These statistical analyses are necessary to study device yield and manufacturability, in order for such devices to form the building blocks for the realisation of quantum integrated circuits. The multiplexer provides a scalable architecture which makes a whole series of further investigations into more complex devices possible.

cond-mat.mes-hall↗