arXiv subjects

P. Perna

Publications and source records attributed to P. Perna.

16 recordsLinked to original sources

arXiv2025

Nodeless Hybridization as Proof of Trivial Topology in Samarium Hexaboride

Calculations unanimously predict samarium hexaboride to be a topological Kondo insulator, the first topological insulator driven by strong electron correlation. As of today it appears also experimentally established as the only representative of this material class. Here, we investigate the three-dimensional band structure of SmB$_6$ and show that it is incompatible with a topological Kondo insulator which must have hybridization nodes at high-symmetry points. In addition we clarify the remaining questions concerning the nature of the surface states with new data. We address consequences for the search for correlated topological insulators.

cond-mat.str-el↗

arXiv2020

Origin of the Large Perpendicular Magnetic Anisotropy in Nanometer-thick Epitaxial Graphene/Co/Heavy Metal Heterostructures

A combination of theoretical modelling and experiments reveals the origin of the large perpendicular magnetic anisotropy (PMA) that appears in nanometer-thick epitaxial Co films intercalated between graphene (Gr) and a heavy metal (HM) substrate, as a function of the Co thickness. High quality epitaxial Gr/Co\n/HM(111) (HM=Pt,Ir) heterostructures are grown by intercalation below graphene, which acts as a surfactant that kinetically stabilizes the pseudomorphic growth of highly perfect Co face-centered tetragonal ($fct$) films, with a reduced number of stacking faults as the only structural defect observable by high resolution scanning transmission electron microscopy (HR-STEM). Magneto-optic Kerr effect (MOKE) measurements show that such heterostructures present PMA up to large Co critical thicknesses of about 4~nm (20~ML) and 2~nm (10~ML) for Pt and Ir substrates, respectively, while X-ray magnetic circular dichroism (XMCD) measurements show an inverse power law of the anistropy of the orbital moment with Co thickness, reflecting its interfacial nature, that changes sign at about the same critical values. First principles calculations show that, regardless of the presence of graphene, ideal Co $fct$ films on HM buffers do not sustain PMAs beyond around 6~MLs due to the in-plane contribution of the inner bulk-like Co layers. The large experimental critical thicknesses sustaining PMA can only be retrieved by the inclusion of structural defects that promote a local $hcp$ stacking such as twin boundaries or stacking faults. Remarkably, a layer resolved analysis of the orbital momentum anisotropy reproduces its interfacial nature, and reveals that the Gr/Co interface contribution is comparable to that of the Co/Pt(Ir).

cond-mat.mtrl-sci↗

arXiv2020

Direct determination of Spin-Orbit torque by using dc current-voltage characteristics

Spin polarized currents are employed to efficiently manipulate the magnetization of ferromagnetic ultrathin films by exerting a torque on it. If the spin currents are generated by means of the spin-orbit interaction between a ferromagnetic and a non-magnetic layer, the effect is known as spin-orbit torque (SOT), and is quantified by measuring the effective fields produced by a charge current injected into the device. In this work, we present a new experimental technique to quantify directly the SOT based on the measurement of non-linearities of the dc current-voltage (IV) characteristics in Hall bar devices employing a simple instrumentation. Through the analysis of the IV curves, the technique provides directly the linearity of the effective fields with current, the detection of the current range in which the thermal effects can be relevant, the appearance of misalignments artefacts when the symmetry relations of SOT are not fulfilled, and the conditions for the validity of the single domain approximations, which are not considered in switching current and second harmonic generation state-of-the-art experiments. We have studied the SOT induced antidamping and field-like torques in Ta/Co/Pt asymmetric stacks with perpendicular magnetic anisotropy.

cond-mat.mes-hall↗

arXiv2020

Experimental evidence of spin-orbit torque from metallic interfaces

Spin currents can modify the magnetic state of ferromagnetic ultrathin films through spin-orbit torque. They may be generated by means of spin-orbit interaction by either bulk or interfacial phenomena. Electrical transport measurements reveal a six-fold increase of the spin-orbit torque accompanied by a drastic reduction of the spin Hall magnetoresistance upon the introduction of a Cu interlayer in a Pt/Cu/Co/Pt structure with perpendicular magnetic anisotropy. We analyze the dependence of the spin Hall magnetoresistance with the thickness of the interlayer in the frame of a drift diffusion model that provides information on the expected spin currents and spin accumulations in the system. The results demonstrate that the major responsible of both effects is spin memory loss at the interface. The enhancement of the spin-orbit torque when introducing an interlayer opens the possibility to design more effient spintronic devices based on materials that are cheap and abundant such as copper.

cond-mat.mes-hall↗

arXiv2019

Thermally Activated Processes for Ferromagnet Intercalation in Graphene-Heavy Metal Interfaces

The development of graphene (Gr) spintronics requires the ability to engineer epitaxial Gr heterostructures with interfaces of high quality, in which the intrinsic properties of Gr are modified through proximity with a ferromagnet to allow for efficient room temperature spin manipulation or the stabilization of new magnetic textures. These heterostructures can be prepared in a controlled way by intercalation through graphene of different metals. Using photoelectron spectroscopy (XPS) and Scanning Tunneling Microscopy (STM), we achieve a nanoscale control of thermal activated intercalation of homogeneous ferromagnetic (FM) layer underneath epitaxial Gr grown onto (111)-oriented heavy metal (HM) buffers deposited in turn onto insulating oxide surfaces. XPS and STM demonstrate that Co atoms evaporated on top of Gr arrange in 3D clusters, and, upon thermal annealing, penetrate through and diffuse below Gr in a 2D fashion. The complete intercalation of the metal occurs at specific temperatures depending on the type of metallic buffer. The activation energy and the optimum temperature for the intercalation processes are determined. We describe a reliable method to fabricate and characterize in-situ high quality Gr-FM/HM heterostructures enabling the realization of novel spin-orbitronic devices that exploits the extraordinary properties of Gr.

cond-mat.mtrl-sci↗

arXiv2019

Towards magnetic control of magnetite

High quality stoichiometric magnetite (Fe3O4) films grown by infrared pulsed laser deposition (IR-PLD) on different surfaces were investigated in order to study the influence of the substrate, orientation, and thickness on their magnetic behavior. Different single crystal (001)-oriented substrates, i.e., SrTiO3(001), MgAl2O4(001) and MgO(001), have been used for the preparation of epitaxial Fe3O4(001) films. By comparison, polycrystalline magnetite films were obtained on both single crystal Al2O3(0001) and amorphous Si/SiO2 substrates. The thickness has been varied between 50 - 400 nm. All films consist of nanocrystalline stoichiometric magnetite with very small strain (<1\%) and present the Verwey transition (Tv) between 110-120 K, i.e., close to bulk magnetite (122 K). In general, Tv depends on both microstructure and thickness, increasing mainly as the thickness increases. Room temperature angular-dependent measurements reveal an in-plane fourfold symmetry magnetic behavior for all films grown on (001)-oriented surfaces, and with the easy axes lying along the Fe3O4 [010] and [100] directions. Remarkably, the fourfold magnetic symmetry shows up to 400 nm thick films. In turn, the films grown on single crystal Al2O3 (0001) and on amorphous Si/SiO2 surfaces display an isotropic magnetic behavior. Coercive field (Hc) depends on microstructure and film thickness. The largest (lowest) Hc value corresponds to the thinner film grown on a single crystal SrTiO3(001) (amorphous Si/SiO2) surface, which present the largest (lowest) strain (crystallinity). Moreover, the coercivity follows an inverse law with film thickness. Our results demonstrate that we can artificially control the magnetic behavior of stoichiometric IR-PLD grown Fe3O4 films by exploiting substrate-induced anisotropy and thickness-controlled coercivity, that might be relevant to incorporate magnetite in future spintronic devices.

cond-mat.mtrl-sci↗

arXiv2017

Interfacial exchange coupling induced chiral symmetry-breaking of Spin-Orbit effects

We demonstrate that the interfacial exchange coupling in ferromagnetic/antiferromagnetic (FM/AFM) systems induces symmetry-breaking of the Spin-Orbit (SO) effects. This has been done by studying the field and angle dependencies of anisotropic magnetoresistance and vectorialresolved magnetization hysteresis loops, measured simultaneously and reproduced with numerical simulations. We show how the induced unidirectional magnetic anisotropy at the FM/AFM interface results in strong asymmetric transport behaviors, which are chiral around the magnetization hard-axis direction. Similar asymmetric features are anticipated in other SO-driven phenomena.

cond-mat.mtrl-sci↗

arXiv2012

Electron transfer and ionic displacements at the origin of the 2D electron gas at the LAO/STO interface: Direct measurements with atomic-column spatial resolution

The discovery that the interface between two band gap insulators LaAlO3 and SrTiO3 is highly conducting has raised an enormous interest in the field of oxide electronics. The LAlO3/SrTiO3 interface can be tuned using an electric field and switched from a superconducting to an insulating state. Conducting paths in an insulating background can be written applying a voltage with the tip of an atomic force microscope, creating great promise for the development of a new generation of nanoscale electronic devices. However, the mechanism for interface conductivity in LaAlO3/SrTiO3 has remained elusive. The theoretical explanation based on an intrinsic charge transfer (electronic reconstruction) has been strongly challenged by alternative descriptions based on point defects. In this work, thanks to modern aberration-corrected electron probes with atomic-scale spatial resolution, interfacial charge and atomic displacements originating the electric field within the system can be simultaneously measured, yielding unprecedented experimental evidence in favor of an intrinsic electronic reconstruction.

cond-mat.str-el↗

arXiv2010

Energy and symmetry of $dd$ excitations in undoped layered cuprates measured by Cu $L_3$ resonant inelastic x-ray scattering

We measured high resolution Cu $L_3$ edge resonant inelastic x-ray scattering (RIXS) of the undoped cuprates La$_2$CuO$_4$, Sr$_2$CuO$_2$Cl$_2$, CaCuO$_2$ and NdBa$_2$Cu$_3$O$_6$. The dominant spectral features were assigned to $dd$ excitations and we extensively studied their polarization and scattering geometry dependence. In a pure ionic picture, we calculated the theoretical cross sections for those excitations and used them to fit the experimental data with excellent agreement. By doing so, we were able to determine the energy and symmetry of Cu-3$d$ states for the four systems with unprecedented accuracy and confidence. The values of the effective parameters could be obtained for the single ion crystal field model but not for a simple two-dimensional cluster model. The firm experimental assessment of $dd$ excitation energies carries important consequences for the physics of high $T_c$ superconductors. On one hand, having found that the minimum energy of orbital excitation is always $\geq 1.4$ eV, i.e., well above the mid-infrared spectral range, leaves to magnetic excitations (up to 300 meV) a major role in Cooper pairing in cuprates. On the other hand, it has become possible to study quantitatively the effective influence of $dd$ excitations on the superconducting gap in cuprates.

cond-mat.supr-con↗

arXiv2010

Magnetic properties of pseudomorphic epitaxial films of Pr_{0.7}Ca_{0.3}MnO_3 under different biaxial tensile stresses

In order to analyse the effect of strain on the magnetic properties of narrow-band manganites, the temperature and field dependent susceptibilities of about 8.5 nm thick epitaxial Pr0.7Ca0.3MnO3 films, respectively grown on (001) and (110) SrTiO3 substrates, have been compared. For ultrathin samples grown on (001) SrTiO3, a bulk-like cluster-glass magnetic behaviour is found, indicative of the possible coexistence of antiferromagnetic and ferromagnetic phases. On the contrary, ultrathin films grown on (110) substrates show a robust ferromagnetism, with a strong spontaneous magnetization of about 3.4 mB /Mn atom along the easy axis. On the base of high resolution reciprocal space mapping analyses performed by x-ray diffraction, the different behaviours are discussed in terms of the crystallographic constraints imposed by the epitaxy of Pr0.7Ca0.3MnO3 on SrTiO3. We suggest that for growth on (110) SrTiO3, the tensile strain on the film c-axis, lying within the substrate plane, favours the ferromagnetic phase, possibly by allowing a mixed occupancy and hybridization of both in-plane and out-of-plane eg orbitals. Our data allow to shed some physics of inhomogeneous states in manganites and on the nature of their ferromagnetic insulating state.

cond-mat.mtrl-sci↗

arXiv2010

Tailoring magnetic anisotropy in epitaxial half metallic La0.7Sr0.3MnO3 thin films

We present a detailed study on the magnetic properties, including anisotropy, reversal fields, and magnetization reversal processes, of well characterized half-metallic epitaxial La0.7Sr0.3MnO3 (LSMO) thin films grown onto SrTiO3 (STO) substrates with three different surface orientations, i.e. (001), (110) and (1-18). The latter shows step edges oriented parallel to the [110] (in-plane) crystallographic direction. Room temperature high resolution vectorial Kerr magnetometry measurements have been performed at different applied magnetic field directions in the whole angular range. In general, the magnetic properties of the LSMO films can be interpreted with just the uniaxial term with the anisotropy axis given by the film morphology, whereas the strength of this anisotropy depends on both structure and film thickness. In particular, LSMO films grown on nominally flat (110)-oriented STO substrates presents a well defined uniaxial anisotropy originated from the existence of elongated in-plane [001]-oriented structures, whereas LSMO films grown on nominally flat (001)-oriented STO substrates show a weak uniaxial magnetic anisotropy with the easy axis direction aligned parallel to residual substrate step edges. Elongated structures are also found for LSMO films grown on vicinal STO(001) substrates. These films present a well-defined uniaxial magnetic anisotropy with the easy axis lying along the step edges and its strength increases with the LSMO thickness. It is remarkable that this step-induced uniaxial anisotropy has been found for LSMO films up to 120 nm thickness. Our results are promising for engineering novel half-metallic magnetic devices that exploit tailored magnetic anisotropy.

cond-mat.mes-hall↗

arXiv2009

Polar catastrophe and electronic reconstructions at the LaAlO3/SrTiO3 interface: evidence from optical second harmonic generation

The so-called "polar catastrophe", a sudden electronic reconstruction taking place to compensate for the interfacial ionic polar discontinuity, is currently considered as a likely factor to explain the surprising conductivity of the interface between the insulators LaAlO3 and SrTiO3. We applied optical second harmonic generation, a technique that a priori can detect both mobile and localized interfacial electrons, to investigating the electronic polar reconstructions taking place at the interface. As the LaAlO3 film thickness is increased, we identify two abrupt electronic rearrangements: the first takes place at a thickness of 3 unit cells, in the insulating state; the second occurs at a thickness of 4-6 unit cells, i.e., just above the threshold for which the samples become conducting. Two possible physical scenarios behind these observations are proposed. The first is based on an electronic transfer into localized electronic states at the interface that acts as a precursor of the conductivity onset. In the second scenario, the signal variations are attributed to the strong ionic relaxations taking place in the LaAlO3 layer.

cond-mat.mtrl-sci↗

arXiv2009

Charge density waves enhance the electronic noise of manganites

The transport and noise properties of Pr_{0.7}Ca_{0.3}MnO_{3} epitaxial thin films in the temperature range from room temperature to 160 K are reported. It is shown that both the broadband 1/f noise properties and the dependence of resistance on electric field are consistent with the idea of a collective electrical transport, as in the classical model of sliding charge density waves. On the other hand, the observations cannot be reconciled with standard models of charge ordering and charge melting. Methodologically, it is proposed to consider noise-spectra analysis as a unique tool for the identification of the transport mechanism in such highly correlated systems. On the basis of the results, the electrical transport is envisaged as one of the most effective ways to understand the nature of the insulating, charge-modulated ground states in manganites.

cond-mat.str-el↗

arXiv2007

Nonresonant microwave absorption in epitaxial La-Sr-Mn-O films and its relation to colossal magnetoresistance

We study magnetic-field-dependent nonresonant microwave absorption and dispersion in thin La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ films and show that it originates from the colossal magnetoresistance. We develop the model for magnetoresistance of a thin ferromagnetic film in oblique magnetic field. The model accounts fairly well for our experimental findings, as well as for results of other researchers. We demonstrate that nonresonant microwave absorption is a powerful technique that allows contactless measurement of magnetic properties of thin films, including magnetoresistance, anisotropy field and coercive field.

cond-mat.str-el↗

arXiv2006

Direct Observation of Spectroscopic Inhomogeneities on La0.7Sr0.3MnO3 Thin Films by Scanning Tunnelling Spectroscopy

Scanning tunnelling spectroscopy measurements were performed on La0.7Sr0.3MnO3 thin films both at room temperature and liquid nitrogen temperature. While no inhomogeneities were recorded at liquid nitrogen temperature on any sample, a clear evidence of spectroscopic inhomogeneities was evident in tunnelling conductance maps collected at room temperature. The investigated films exhibit a transition from a ferromagnetic-metallic to a paramagnetic-insulating state around room temperature, so that the observed spectroscopic features can be interpreted within a phase separation scenario. A quantitative analysis of the observed spectroscopic features is reported pointing out the occurrence of phase modulation and its possible correlation with the properties of the system.

cond-mat.str-el↗

arXiv2004

Transport properties in manganite thin films

The resistivity of thin $La_{0.7}A_{0.3}MnO_{3}$ films ($A=Ca, Sr$) is investigated in a wide temperature range. The comparison of the resistivities is made among films grown by different techniques and on several substrates allowing to analyze samples with different amounts of disorder. In the low-temperature nearly half-metallic ferromagnetic state the prominent contribution to the resistivity scales as $T^α$ with $α\simeq 2.5$ for intermediate strengths of disorder supporting the theoretical proposal of single magnon scattering in presence of minority spin states localized by the disorder. For large values of disorder the low-temperature behavior of the resistivity is well described by the law $T^{3}$ characteristic of anomalous single magnon scattering processes, while in the regime of low disorder the $α$ exponent tends to a value near 2. In the high temperature insulating paramagnetic phase the resistivity shows the activated behavior characteristic of polaronic carriers. Finally in the whole range of temperatures the experimental data are found to be consistent with a phase separation scenario also in films doped with strontium ($A=Sr$).

cond-mat.str-el↗