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Oguzhan Orhan

Publications and source records attributed to Oguzhan Orhan.

3 recordsLinked to original sources

GRAINSMITH: A Generator of Polycrystalline Models for Atomistic Simulations with Statistical and Grain-Boundary Morphology Control

Atomistic studies of grain-boundary engineering, grain-size effects and dopant enrichment require reproducible models with prescribed microstructural features. We present GRAINSMITH, an open-source Python package for generating statistically controlled polycrystalline models with selectable grain-boundary morphologies for molecular dynamics and subsequent relaxation. Within supported feature combinations, a single configuration specifies grain-size and volume distributions, crystallographic texture, boundary-area-weighted disorientation-angle distributions, phase composition and grain-boundary dopant placement. Crystal construction supports 230 crystallographic space groups. Periodic Voronoi and volume-targeted Laguerre tessellations provide planar boundaries, while distinct geometry backends generate smoothly curved and band-limited self-affine boundaries. A registry of twenty-six checks assesses applicable inputs, construction properties and outputs. Each run exports LAMMPS data and Extended XYZ files together with structural and statistical descriptors and machine-readable provenance. For a fixed software version and computational environment, the configuration and random seed determine byte-reproducible atomic configurations and scientific data across supported worker counts. By combining statistical specification, boundary-morphology control and reproducible atomistic output, GRAINSMITH supports systematic studies of microstructural effects and quantitative comparisons across generated models.

cond-mat.mtrl-sci

Low-Temperature Transport in Li-Ion Battery EC/EMC/FEC Electrolytes: Molecular Dynamics and Machine-Learning Modeling

Low-temperature operation imposes severe limitations on lithium-ion transport in battery electrolytes, yet the coupled effects of solvent composition and fluorinated additives in the cold-temperature regime remain insufficiently resolved. Here, we combine classical molecular dynamics (MD) and machine learning (ML) to investigate 1 M LiPF$_6$ electrolytes containing ethylene carbonate (EC), ethyl methyl carbonate (EMC), and EC/EMC (3:7), with 0-10 mol% fluoroethylene carbonate (FEC), from 298 to 233 K. MD simulations quantify Li$^+$ self-diffusion, Nernst-Einstein (NE) and Green-Kubo (GK) conductivities and local coordination, while Gaussian-process surrogates model conductivity across composition and temperature. Cooling produces a pronounced transport penalty, particularly in EMC-containing electrolytes, whose GK conductivity decreases by more than 98% at 233 K, compared with approximately 90% in EC-rich systems. Li$^+$ self-diffusion activation energies are 0.49-0.54 eV for EMC-containing systems and 0.27-0.29 eV for EC-based systems. Within the EC family, 0-2 mol% FEC gives comparable cold-temperature transport, whereas 5-10 mol% FEC shows lower conductivity retention at the coldest simulated temperature. The analyzed coordination channels remain solvent dominated, while direct Li$^+$-FEC coordination is not quantified in the present RDF set.The Gaussian-process surrogates achieve composition-disjoint cross-validated RMSE values of 0.56 and 0.57 mS cm$^{-1}$ for NE and GK conductivity. Within the simulated liquid-state trajectories, temperature and host-solvent composition dominate the bulk-transport response, with FEC acting as a secondary modifier.

physics.chem-ph

Electronic Phase Transformations and Energy Gap Variations in Uniaxial and Biaxial Strained Monolayer VS$_2$ TMDs: A Comprehensive DFT and Beyond-DFT Study

In the field of 2D materials, transition metal dichalcogenides (TMDs) are gaining attention for electronic applications. Our study delves into the H-phase monolayer VS$_2$ of the TMD family, analyzing its electronic structure and how strain affects its band structure using Density Functional Theory (DFT). Using a variety of computational methods, we provide an in-depth view of the electronic band structure. We find that strains between -5\% and +5\% significantly affect the energy gap, with uniaxial strains having a stronger effect than biaxial strains. Remarkably, compressive strains induce a phase shift from semiconducting to metallic, associated with symmetry breaking and changes in bond length. These findings not only deepen our understanding of the electronic nuances of monolayer VS$_2$ under varying strains but also suggest potential avenues for creating new electronic devices through strain engineering.

cond-mat.mtrl-sci