arXiv subjects

Nirmal Kumar

Publications and source records attributed to Nirmal Kumar.

4 recordsLinked to original sources

arXiv2026

Enhanced hydrogen response of copper-doped TiO$_2$ synthesised by helium-assisted magnetron sputtering

Cu-doped TiO$_2$ thin films for hydrogen sensing were synthesised by reactive DC magnetron sputtering in Ar/O$_2$/He mixtures, with the He fraction used as a control parameter for film growth. By combining normal-angle deposition (NAD) and glancing-angle deposition (GLAD) with post-deposition annealing, the effects of He on microstructure formation and sensor performance were examined. X-ray diffraction and electron microscopy revealed that He promotes nanostructuring, lattice expansion in as-deposited NAD films, increased porosity after annealing, and a stronger anatase character in the final oxide layers. These structural changes, which enhance the reactive surface area, lead to improved hydrogen sensing at 300\,$^\circ$C in 1~vol.\,\% H$_2$. The response of NAD films increased from 1.4 to 6.0 simply by replacing part of the argon with helium, whereas GLAD films showed only a modest increase. The observed nanostructuring is discussed in terms of a simulation-supported growth scenario involving energetic backscattered He, a reduced hammering effect, and cooling-related suppression of adatom mobility, which together favour the formation of a more open sensing layer. Helium-assisted sputtering represents a useful physical route for tailoring oxide thin films for gas-sensing applications.

cond-mat.mtrl-sci↗

arXiv2026

Boron-assisted stabilization of low-resistivity mixed-valence Cu-O thin films prepared by reactive magnetron sputtering

This study systematically investigated the influence of boron incorporation in Cu-O thin films and the effect of oxygen partial pressure ($p_{\rm ox}$) on the phase evolution, chemical bonding, and electrical characteristics of the prepared films. A phase transition from Cu$_2$O to Cu$_2$O/Cu$_4$O$_3$ to CuO was observed as oxygen partial pressure increased. Boron incorporation significantly broadened the stability window of the Cu$_2$O and Cu$_4$O$_3$ phases and delayed the transition to CuO at higher oxygen partial pressure. In the highly B-doped Cu-O films, Cu$_4$O$_3$ was stabilized even under oxygen-rich conditions along with the CuO phase, suggesting that boron significantly altered the oxidation pathway. The formation of B-O and possible B-O-Cu configurations altered the local oxygen chemistry and promoted mixed-valence copper oxide phases. Electrical measurements revealed that highly B-doped Cu-O films exhibited a delayed transition from a high-resistivity low-$p_{\rm ox}$ regime to a low-resistivity mixed-valence regime, ultimately reaching approximately 0.06 $\Omega$ cm, among the lowest reported resistivities for a CuO-like material. These findings demonstrate that boron doping is an effective approach for tailoring the phase stability, defect chemistry, and electrical characteristics of Cu-O thin films for optoelectronic and photovoltaic applications.

cond-mat.mtrl-sci↗

arXiv2025

Thermally-induced microstructural evolution in nanoparticle-based CuO, WO$_3$ and CuO-WO$_3$ thin films for hydrogen gas sensing

This study systematically investigates the microstructural evolution of nanoparticle-based CuO, WO$_3$, and composite 'CuO-WO$_3$' thin films induced by their post-deposition annealing. The films were reactively deposited using a magnetron-based gas aggregation technique, with the composite films consisting of alternating monolayers of CuO and WO$_3$ nanoparticles. After deposition, the films were annealed in synthetic air at temperatures ranging from 200 to 400$^\circ$C and characterized using scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy. Annealing of the CuO films led to the most pronounced changes associated with a gradual enhancement of crystallinity accompanied by significant particle growth with increasing annealing temperature, while the WO$_3$ and CuO-WO$_3$ films were more thermally stable to crystallization and particle growth. Notably, at 400$^\circ$C, the CuO--WO$_3$ films crystallized into a novel $\gamma$-CuWO$_4$ phase. The annealed films were further evaluated for their gas-sensing performance upon H$_2$ exposure and the obtained results were analyzed in relation to film properties and the microstructural evolution induced by annealing.

cond-mat.mtrl-sci↗

arXiv2025

New polymorph {\gamma}-CuWO4 inspired by {\gamma}-CuMoO4: experimental identification and theoretical verification

In the context of our efforts to develop hydrogen gas sensors, two samples of ternary CuWO4 with the same crystalline structure have been prepared by two different non-equilibrium techniques. We show that the materials' structure is significantly different from the known stable one, and we identify that it is very similar to that of previously reported {\gamma}-CuMoO4. We use ab initio calculations to confirm that the newly identified phase, {\gamma}-CuWO4, represents a local energy minimum. We present very similar calculated and measured lattice constants and X-ray diffractograms. We make a case that the low-temperature formation of the metastable {\gamma}-CuWO4 phase is facilitated by easier kinetics and/or by Cu-rich composition of our samples, and we show that it converts to the stable phase after annealing to 600 {\deg}C.

cond-mat.mtrl-sci↗