Ning Luo — Page 2 | arXiv Science

arXiv2015

Electronic structures of [111]-oriented free-standing InAs and InP nanowires

We report on a theoretical study of the electronic structures of the [111]-oriented, free-standing, zincblende InAs and InP nanowires with hexagonal cross sections by means of an atomistic $sp^{3}s^{*} $, spin-orbit interaction included, nearest-neighbor, tight-binding method. The band structures and the band state wave functions of these nanowires are calculated and the symmetry properties of the bands and band states are analyzed based on the $C_{3v}$ double point group. It is shown that all bands of these nanowires are doubly degenerate at the $Γ$-point and some of these bands will split into non-degenerate bands when the wave vector $k$ moves away from the $Γ$-point as a manifestation of spin-splitting due to spin-orbit interaction. It is also shown that the lower conduction bands of these nanowires all show simple parabolic dispersion relations, while the top valence bands show complex dispersion relations and band crossings. The band state wave functions are presented by the spatial probability distributions and it is found that all the band states show $2π/3$-rotation symmetric probability distributions. The effects of quantum confinement on the band structures of the [111]-oriented InAs and InP nanowires are also examined and an empirical formula for the description of quantization energies of the lowest conduction band and the highest valence band is presented. The formula can simply be used to estimate the enhancement of the band gaps of the nanowires at different sizes as a result of quantum confinement.

cond-mat.mes-hall↗

arXiv2015

Electronic structures of [001]- and [111]-oriented InSb and GaSb free-standing nanowires

We report on a theoretical study of the electronic structures of InSb and GaSb nanowires oriented along the [001] and [111] crystallographic directions. The nanowires are described by atomistic, spin-orbit inteaction included, tight-binding models, and the band structures and the wave functions of the nanowires are calculated by means of a Lanczos iteration algorithm. For the [001]-oriented InSb and GaSb nanowires, the systems with both square and rectangular cross sections are considered. Here, it is found that all the energy bands are double degenerate. Furthermore, although the lowest conduction bands in these nanowires show good parabolic dispersions, the top valence bands show rich and complex structures. In particular, the topmost valence bands of these nanowires with a square cross section show a double maximum structure. In the nanowires with a rectangular cross section, this double maximum structure is suppressed and top valence bands gradually develop into parabolic bands as the aspect ratio of the cross section is increased. For the [111]-oriented InSb and GaSb nanowires, the systems with hexagonal cross sections are considered. It is found that all the bands at the Γ-point are again double degenerate. However, some of them will split into non-degenerate bands when the wave vector moves away from the Γ-point. Furthermore, although the lowest conduction bands again show good parabolic dispersions, the topmost valence bands do not show the double maximum structure but, instead, a single maximum structure with its maximum at a wave vector slightly away from the Γ-point. We also investigate the effects of quantum confinement on the band structures of the [001]- and [111]-oriented InSb and GaSb nanowires and present an empirical formula for the description of quantization energies of the band edge states in the nanowires.

cond-mat.mes-hall↗