arXiv subjects

Nico Klingner

Publications and source records attributed to Nico Klingner.

9 recordsLinked to original sources

arXiv2026

Effect of Near-surface Thermal Spikes on Radiation Hardness of Gallium Oxide

Gallium oxide (Ga$_{2}$O$_{3}$) stands out as an extraordinary high radiation-tolerant semiconductor, because its lattice displacements induce polymorph transitions, holding material crystalline instead of leading to amorphization. Meanwhile, under extremely severe irradiation conditions many crystals become amorphous, often starting from surfaces where the translation symmetry breaks. Here, we show that the surface amorphization may prevail over the crystallisation in Ga$_{2}$O$_{3}$, however only if the mass and energy of irradiated ions produce sufficiently dense heat spikes in the immediate vicinity of the free surface. Applying machine-learned molecular dynamics simulations together with experimental broad-beam and focused ion-beam irradiations, we conclude that the presence of the free surface enables asymmetric displacements of Ga and O atoms, leading to a local non-stoichiometry. Consequently, when the affected cascade volume is sufficiently large, this compositional imbalance suppresses recrystallization and promotes amorphization. As such, our results are ready to use for tailoring irradiation conditions to either prevent or induce surface amorphization, depending on the requirements of the intended applications in Ga$_{2}$O$_{3}$ or other compound semiconductors.

cond-mat.mtrl-sci↗

arXiv2025

Defect analysis of the $β$- to $γ$-Ga$_{2}$O$_{3}$ phase transition

In this study, we investigate the ion-irradiation-induced phase transition in gallium oxide (Ga2O3) from the $β$ to the $γ$ phase, the role of defects during the transformation, and the quality of the resulting crystal structure. Using a multi-method analysis approach including X-ray diffraction (XRD), transmission electron microscopy (TEM), Rutherford backscattering spectrometry in channeling mode (RBS/c), Doppler broadening variable energy positron annihilation spectroscopy (DB-VEPAS) and variable energy positron annihilation lifetime spectroscopy (VEPALS) supported by density functional theory (DFT) calculations, we have characterized defects at all the relevant stages before, during, and after the phase transition. Reduction in backscattering yield was observed in RBS/c spectra after the transition to the $γ$ phase. This is corroborated by a significant decrease in the positron trapping center density due to generation of embedded vacancies intrinsic for the $γ$-Ga2O3 but too shallow in order to trap positrons. A comparison of the observed positron lifetime of $γ$-Ga2O3 with different theoretical models shows good agreement with the three-site $γ$ phase approach. A characteristic increase in the effective positron diffusion length and the positron lifetime at the transition point from $β$-Ga2O3 to $γ$-Ga2O3 enables visualization of the phase transition with positrons for the first time. Moreover, a subsequent reduction of these quantities with increasing irradiation fluence was observed, which we attribute to further evolution of the $γ$-Ga2O3 and changes in the gallium vacancy density as well as relative occupation in the crystal lattice.

cond-mat.mtrl-sci↗

arXiv2025

A silicon spin vacuum: isotopically enriched $^{28}$silicon-on-insulator and $^{28}$silicon from ultra-high fluence ion implantation

Isotopically enriched silicon (Si) can greatly enhance qubit coherence times by minimizing naturally occurring $^{29}$Si which has a non-zero nuclear spin. Ultra-high fluence $^{28}$Si ion implantation of bulk natural Si substrates was recently demonstrated as an attractive technique to ultra-high $^{28}$Si isotopic purity. In this work, we apply this $^{28}$Si enrichment process to produce $^{28}$Si and $^{28}$Si-on-insulator (SOI) samples. Experimentally, we produced a $^{28}$Si sample on natural Si substrate with $^{29}$Si depleted to 7~ppm (limited by measurement noise floor), that is at least 100 nm thick. This is achieved with an ion energy that results in a sputter yield of less than one and an ultra-high ion fluence, as supported by our improved computational model that is based on fitting a large number of experiments. Further, our model predicts the $^{29}$Si and $^{30}$Si depletion in our sample to be less than 1~ppm. In the case of SOI, ion implantation conditions are found to be more stringent than those of bulk natural Si in terms of minimizing threading dislocations upon subsequent solid phase epitaxy annealing. Finally, we do not observe open volume defects in our $^{28}$SOI and $^{28}$Si samples after SPE annealing (620°C, 10 minutes).

cond-mat.mtrl-sci↗

arXiv2023

Roadmap for focused ion beam technologies

The focused ion beam (FIB) is a powerful tool for the fabrication, modification and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was originally intended for photomask repair in the semiconductor industry, there are now many different types of FIB that are commercially available. These instruments use a range of ion species and are applied broadly in materials science, physics, chemistry, biology, medicine, and even archaeology. The goal of this roadmap is to provide an overview of FIB instrumentation, theory, techniques and applications. By viewing FIB developments through the lens of the various research communities, we aim to identify future pathways for ion source and instrumentation development as well as emerging applications, and the scope for improved understanding of the complex interplay of ion-solid interactions. We intend to provide a guide for all scientists in the field that identifies common research interests and will support future fruitful interactions connecting tool development, experiment and theory. While a comprehensive overview of the field is sought, it is not possible to cover all research related to FIB technologies in detail. We give examples of specific projects within the broader context, referencing original works and previous review articles throughout.

physics.ins-det↗

arXiv2023

Universal radiation tolerant semiconductor

Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta double polymorph Ga2O3 structures exhibit remarkably high radiation tolerance. Specifically, for room temperature experiments, they tolerate a disorder equivalent to hundreds of displacements per atom, without severe degradations of crystallinity; in comparison with, e.g., Si amorphizable already with the lattice atoms displaced just once. We explain this behavior by an interesting combination of the Ga- and O- sublattice properties in gamma-Ga2O3. In particular, O-sublattice exhibits a strong recrystallization trend to recover the face-centered-cubic stacking despite the stronger displacement of O atoms compared to Ga during the active periods of cascades. Notably, we also explained the origin of the beta-to-gamma Ga2O3 transformation, as a function of the increased disorder in beta-Ga2O3 and studied the phenomena as a function of the chemical nature of the implanted atoms. As a result, we conclude that gamma/beta double polymorph Ga2O3 structures, in terms of their radiation tolerance properties, benchmark a class of universal radiation tolerant semiconductors.

cond-mat.mtrl-sci↗

arXiv2020

Effects of Alloying Elements on Surface Oxides of Hot-Dip Galvanized Press Hardened Steel

Effects of steel alloying elements on the formation of the surface oxide layer of hot-dip galvanized press hardened steel after austenitization annealing were examined with various advanced microscopy and spectroscopy techniques. The main oxides on top of the original thin Al2O3 layer, originating from the primary galvanizing process, are identified as ZnO and (Mn,Zn)Mn2O4 spinel. For some of the investigated steel alloys, a non-uniform, several nanometer thick Cr enriched, additional film was found at the Al2O3 layer. At a sufficiently high concentration, Cr can act as a substitute for Al during annealing, strengthening and regenerating the original Al2O3 layer with Cr2O3. Further analysis with secondary ion mass spectrometry allowed a reliable distinction between ZnO and Zn(OH)2.

physics.app-ph↗

arXiv2020

Boron Liquid Metal Alloy Ion Sources For Special FIB Applications

Focused Ion Beam (FIB) processing has been established as a well-suited and promising technique in R&D in nearly all fields of nanotechnology for patterning and prototyping on the micro and nanometer scale and below. Among other concepts, liquid metal alloy ion sources (LMAIS) are one of the alternatives to conventional gallium beams to extend the FIB application field. To meet the rising demand for light ions, different boron containing alloys were investigated in this work. A promising solution was found in a Co31Nd64B5 based LMAIS which will be introduced in more detail. Besides cobalt as a ferromagnetic element and the rare earth element neodymium, boron in particular is of interest for special FIB applications like local p-type doping, for which resolution of about 30 nm has been achieved so far.

physics.ins-det↗

arXiv2019

Morphology modifcation of Si nanopillars under ion irradiation at elevated temperatures: plastic deformation and controlled thinning to 10 nm

Si nanopillars of less than 50 nm diameter have been irradiated in a helium ion microscope with a focused Ne$^+$ beam. The morphological changes due to ion beam irradiation at room temperature and elevated temperatures have been studied with the transmission electron microscope. We found that the shape changes of the nanopillars depend on irradiation-induced amorphization and thermally driven dynamic annealing. While at room temperature, the nanopillars evolve to a conical shape due to ion-induced plastic deformation and viscous flow of amorphized Si, simultaneous dynamic annealing during the irradiation at elevated temperatures prevents amorphization which is necessary for the viscous flow. Above the critical temperature of ion-induced amorphization, a steady decrease of the diameter was observed as a result of the dominating forward sputtering process through the nanopillar sidewalls. Under these conditions the nanopillars can be thinned down to a diameter of 10 nm in a well-controlled manner. A deeper understanding of the pillar thinning process has been achieved by a comparison of experimental results with 3D computer simulations based on the binary collision approximation.

physics.app-ph↗

arXiv2015

Nanometer scale elemental analysis in the helium ion microscope using time of flight spectrometry

Time of flight backscattering spectrometry (ToF-BS) was successfully implemented in a helium ion microscope (HIM). Its integration introduces the ability to perform laterally resolved elemental analysis as well as elemental depth profiling on the nm scale. A lateral resolution of $\leq$ 54 nm and a time resolution of $Δt \leq$ 17 ns $(Δt/t \leq 5.4\%)$ are achieved. By using the energy of the backscattered particles for contrast generation, we introduce a new imaging method to the HIM allowing direct elemental mapping as well as local spectrometry. In addition laterally resolved time of flight secondary ion mass spectrometry (ToF-SIMS) can be performed with the same setup. Time of flight is implemented by pulsing the primary ion beam. This is achieved in a cost effective and minimal invasive way that does not influence the high resolution capabilities of the microscope when operating in standard secondary electron (SE) imaging mode. This technique can thus be easily adapted to existing devices. The particular implementation of ToF-BS and ToF-SIMS techniques are described, results are presented and advantages, difficulties and limitations of this new techniques are discussed.

physics.ins-det↗