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Neel Parmar

Publications and source records attributed to Neel Parmar.

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Elimination of Flux Trapping in Superconducting Circuits in Ambient Magnetic Fields

Superconductor digital electronics and quantum computing with superconducting qubits are promising next-generation computing technologies. When cooled down or operated in the presence of a nonzero background magnetic field $B_r$, superconducting thin films comprising the circuits can trap magnetic vortices that can degrade circuit or qubit performance. In this work, we report a practical solution for eliminating flux trapped during cooldown in ambient magnetic fields, $B_r\leq 60$ $\upmu$T, based on controlled local thermal gradients and moats, etched holes in the superconducting films of the circuit. Thermal gradients created by integrated on-chip resistive heaters move vortices towards the moats, where they become trapped away from circuitry regions and pinning sites. Using magnetic imaging and electrical circuit readout, we demonstrate that this approach is capable of removing magnetic flux trapped during field cooling and magnetic flux nucleated by circuit operation. If used in an environment with basic magnetic shielding, this solution is capable of suppressing all magnetic flux in a large-scale circuit, overcoming one of the long-standing challenges preventing high-performance scalable computing using superconductors.

cond-mat.supr-con

Fabrication and Properties of NbN/NbNx/NbN and Nb/NbNx/Nb Josephson Junctions

Increasing integration scale of superconductor electronics (SCE) requires employing kinetic inductors and self-shunted Josephson junctions (JJs) for miniaturizing inductors and JJs. We have been developing a ten-superconductor-layer planarized fabrication process with NbN kinetic inductors and searching for suitable self-shunted JJs to potentially replace high Josephson critical current density, Jc, Nb/Al-AlOx/Nb junctions. We report on the fabrication and electrical properties of NbN/NbNx/NbN junctions produced by reactive sputtering in Ar+N2 mixture on 200-mm wafers at 200 oC and incorporated into a planarized process with two Nb ground planes and Nb wiring layer. Here NbN is a stoichiometric nitride with superconducting critical temperature Tc =15 K and NbNx is a high resistivity, nonsuperconducting nitride deposited using a higher nitrogen partial pressure than for the NbN electrodes. For comparison, we co-fabricated Nb/NbNx/Nb JJs using the same NbNx barriers deposited at 20 oC. We varied the NbNx barrier thickness from 5 nm to 20 nm, resulting in the range of Jc from about 1 mA/um^2 down to ~10 uA/um^2, and extracted coherence length of 3 nm and 4 nm in NbNx deposited, respectively at 20 oC and 200 oC. Both types of JJs are well described by resistively and capacitively shunted junction model without any excess current. We found the Jc of NbN/NbNx/NbN JJs to be somewhat lower than of Nb/NbNx/Nb JJs with the same barrier thickness, despite a much higher Tc and energy gap of NbN than of Nb electrodes. IcRn products up to ~ 0.5 mV were obtained for JJs with Jc~ 0.6 mA/um^2. Jc(T) dependences have been measured.

cond-mat.supr-con

Characterization of Adiabatic Quantum-Flux-Parametrons in the MIT LL SFQ5ee+ Process

Adiabatic quantum-flux-parametron (AQFP) logic is a proven energy-efficient superconductor technology for various applications. To address the scalability challenges, we investigated AQFP shift registers with the AQFP footprint area reduced by 25% with respect to prior work and with more than 2x denser overall designs obtained by eliminating the previously used free space between the AQFPs. We also investigated AQFP cells with different designs of flux trapping moats in the superconducting ground plane as well as compact AQFP cells that took advantage of the smaller feature sizes available in the new fabrication process, SFQ5ee+, at MIT Lincoln Laboratory. This new process features nine planarized Nb layers with a 0.25 $\mu$m minimum linewidth. The fabricated circuits were tested in a liquid He probe and in a closed-cycle cryocooler using a controlled cooling rate through the superconducting critical temperature. Using multiple thermal cycles, we investigated flux trapping in the dense AQFP shift registers as well as in the registers using the old (sparse) AQFP designs at two levels of the residual magnetic field, about 0.53 $\mu$T and about 1.2 $\mu$T. The sparse designs demonstrated 95% to almost 100% probability of operation after the cooldown and very wide operation margins, although the flux trapping probability was increasing with circuit complexities. The margins were similarly wide in the newer dense designs, but flux trapping probability that rendered the registers nonoperational was significantly, by an order of magnitude, higher in the denser circuits and was also very sensitive to the moats' shape and location. Our findings indicate that AQFP circuits are amendable to increasing the scale of integration and further densification, but a careful moat design and optimization are required to reduce flux trapping effects in the dense AQFP circuits.

cond-mat.supr-con