arXiv subjects

Nathan Rodkey

Publications and source records attributed to Nathan Rodkey.

5 recordsLinked to original sources

arXiv2026

Tuning the optoelectronic properties of wide bandgap perovskites: Data-driven insights from combinatorial synthesis and high-throughput experimentation

The discovery and optimization of wide-bandgap lead halide perovskites (LHPs) is hindered by solution-based workflows with limited scalability. Large compositional parameter spaces present an additional challenge for materials optimization. Here, we establish an integrated, combinatorial workflow based on sequential physical vapor deposition that enables independent tuning of cation (Cs/Pb) and anion (Br/Cl) compositions. Applying automated structural, compositional, and optical characterizations across >500 samples regions of interest are rapidly screened in the quaternary Cs-Pb-Br-Cl space. From the screening, we establish a practical Cs/Pb window of 1.05-1.20 for wide bandgap perovskites, within which elevated PL yields were observed. Through in-depth analysis of the data set, we uncover a high-energy optical transition as a robust determinant for high PL yields. By combining mechanistic insight into the compositional origins of high PL efficiency with a fully integrated, high-throughput screening framework, and by openly releasing the complete multi-modal dataset, this work provides a broadly accessible benchmark to accelerate data-driven discovery of wide-bandgap perovskites.

cond-mat.mtrl-sci↗

arXiv2026

Boron Co-Alloying in AlScN Wurtzite Ferroelectrics: Insights from an 850-Sample Combinatorial Study

AlScN wurtzite ferroelectrics are promising candidates for energy-efficient non-volatile memory. However, AlScN suffers from a high coercive field and reduced cycling endurance, and the limited tunability of its properties constrains further optimization. Co-doping AlScN with boron offers the promise of independently tailoring the chemical and structural properties, making AlScBN an attractive quaternary system. This material has already been explored for a few selected compositions, however, no systematic study of the full AlScBN compositional space exists. A combinatorial approach consisting of gradient deposition with HiPIMS at low temperatures of 250{\deg}C and automatic analysis of film properties allowed us to analyze a total of 850 unique samples within the AlScBN phase space. In addition to a full screening of the materials' chemical and structural properties, we fabricate and characterize combinatorial device libraries. XPS charge transfer analysis experimentally confirms that bond ionicity correlates with a reduction in the coercive field for AlScN and AlScBN systems, opposite trends are instead observed for AlBN. While the films maintain a high remanent polarization of 130-150 {\mu}C/cm2, Sc and B co-doping reduces the coercive field from 7 MV/cm to 3 MV/cm. Notably, B co-alloying lowers the amount of Sc needed to lower the coercive field, reducing reliance on this scarce element. In addition, we find that co-alloying with B, notably improves cycling endurance, which is related to a reduction in defect density. These results establish AlScBN as a scalable, CMOS-compatible ferroelectric, positioning it as an interesting alternative to AlScN.

cond-mat.mtrl-sci↗

arXiv2026

Autonomous Sampling and SHAP Interpretation of Deposition-Rates in Bipolar HiPIMS

High-power impulse magnetron sputtering (HiPIMS) offers considerable control over ion energy and flux, making it invaluable for tailoring the microstructure and properties of advanced functional coatings. However, compared to conventional sputtering techniques, HiPIMS suffers from reduced deposition rates. Many groups have begun to evaluate complex pulsing schemes to improve upon this, leveraging multi-pulse schemes (e.g. pre-ionization or bipolar pulses). Unfortunately, the increased complexity of these pulsing schemes has led to high-dimensionality parameter spaces that are prohibitive to classic design of experi-ments. In this work we evaluate bipolar HiPIMS pulses for improving deposition rates of Al and Ti sputter tar-gets. Over 3000 process conditions were collected via autonomous Bayesian sampling over a 6-dimensional parameter space. These process conditions were then interpreted using Shapley Additive Explanations (SHAP), to deconvolute complex process influences on deposition rates. This allows us to link observed var-iations in deposition rate to physical mechanisms such as back-attraction and plasma ignition. Insights gained from this approach were then used to target specific processes where the positive pulse components were expected to have the highest impact on deposition rates. However, in practice, only minimal improve-ments in deposition rate were achieved. In most cases, the positive pulse appears to be detrimental when placed immediately after the neg. pulse which we hypothesize relates to quenching of the afterglow plasma. The proposed workflow combining autonomous experimentation and interpretable machine learning is broad-ly applicable to the discovery and optimization of complex plasma processes, paving the way for physics-informed, data-driven advancements in coating technologies.

physics.plasm-ph↗

arXiv2025

Accurate Reporting of Ion Time-of-Flight during HiPIMS with Gated Front-End Mass Spectrometry

The quality of high-power impulse magnetron sputtering (HiPIMS) deposited films can often improve through the effective use of metal-ion acceleration, requiring precise measurements of time-of-flight (ToF). These measurements are commonly done using time- and energy-resolved mass spectrometry but require careful consideration of the transit time of ions inside. The transit time is typically calculated by considering the travel length in various parts of the spectrometer (e.g. from orifice to detector), but errors associated with these estimations can lead to nonphysical values in a HiPIMS process (e.g. negative ToFs). Here we report a practical approach to determine ion ToF experimentally, using a bipolar HiPIMS power supply to synchronize a gating pulse to the front-end of a HIDEN Analytical EQP-300 mass spectrometer, placed at the working distance. The ToF is measured by applying a +70 V bias to repel ions, and a 5 us gating pulse of 0 V to accept them. To prevent interference with the HiPIMS plasma, a grounded shield is placed in front of the mass-spec head with a variable slit-opening (0.5-3 mm). The effectiveness of the shielding is verified by Langmuir probe measurements, noting negligible shifts in plasma potential for a DC sputter discharge. The gate is then synchronized to a HiPIMS pulse and data collected at 5 us intervals by adjusting the pulse delay. Measurements of the time-of-flights of Ar+, Al+, Sc+, Y+, and W+ ions are presented; Al+ and Ar+ ions were also compared to ToF calculated using mass spectrometry flight tube equations.

physics.ins-det↗

arXiv2025

Ferroelectric AlScN thin films with enhanced polarization and low leakage enabled by high-power impulse magnetron sputtering

The demand for efficient data processing motivates a shift toward in-memory computing architectures. Ferroelectric materials, particularly AlScN, show great promise for next-generation memory devices. However, their widespread application is limited due challenges such as high coercive fields, leakage currents and limited stability. Our work introduces a novel synthesis approach for ferroelectric AlScN thin films using high-power impulse magnetron sputtering (HiPIMS). Through a combinatorial study, we investigate the effect of scandium content and substrate bias on the ferroelectric properties of AlScN films deposited using metal-ion synchronized (MIS) HiPIMS. Leveraging the high ionization rates of HiPIMS and optimally timed substrate bias potentials, we enhance the adatom mobility at low temperatures. Our films exhibit a high degree of texture and crystallinity as well as low roughness at temperatures as low as 250{\deg}C. Most importantly, the films exhibit coercive fields comparable to state-of-the-art values (5 MV/cm) with significantly enhanced remanent polarization (158-172.0 {\mu}C/cm2). Notably, the remanent polarization remains stable across varying scandium concentrations. We further evaluate cycling stability and leakage current to assess suitability for memory applications. This study demonstrates HiPIMS as a scalable and CMOS compatible technique for synthesizing high-quality ferroelectric AlScN films, paving the way for their application in non-volatile memory applications.

physics.app-ph↗