arXiv subjects

Nathan Gajowski

Publications and source records attributed to Nathan Gajowski.

4 recordsLinked to original sources

arXiv2026

InGaAs and GaAsSb PIN Nanowire Arrays with Large Absorption around 1.55 μ m for Room Temperature Infrared Applications

We report a comparative analysis between InGaAs and GaAsSb-based top-down cylindrical nanowire arrays fabricated from p-i-n heterostructures. Optical constants measured via spectroscopic ellipsometry were incorporated into FDTD simulations to optimize array geometries. Simulations indicated that GaAsSb nanowire arrays with a diameter of 314 nm and a period of 904 nm achieved a peak absorption of 98% at 1550 nm, while InGaAs nanowire arrays with a 326 nm diameter and 1090 nm period reached 76%. Measurements of fabricated arrays showed absorption of 89% at 1628 nm (GaAsSb) and enhanced sub-bandgap absorption at 1766 nm (InGaAs) at room temperature. These results were confirmed through modelling of the as-fabricated nanowire diameters 330 nm and 411 nm, demonstrating excellent agreement between theory and experiment. In both material platforms, nano-structuring improved the absorption relative to planar films, demonstrating near-unity absorption suitable for practical single-photon detection.

physics.optics↗

arXiv2026

Comparison of time-resolved photoluminescence and deep-level transient spectroscopy defect evaluations in an InAs nBn detector subjected to in-situ and ex-situ 63 MeV proton irradiation

Deep-level transient spectroscopy and temperature-dependent time-resolved photoluminescence experiments are performed on identical InAs nBn photodetector structures as a function of in-situ and ex-situ 63 MeV proton irradiation to assess their generation and recombination dynamics. Pre-irradiation, the n-type InAs absorbing region exhibits a steadily increasing minority carrier lifetime with increasing temperature, providing evidence that excited minority carriers may be recombining via shallow defect levels. From deep-level transient spectroscopy, two features are found between 10 K and 275 K: a low temperature broad shoulder, which suggests emission from multiple shallow electron defect levels with energies < 29 meV, and a high temperature minimum occurring at approximately 230 K with an activation energy of 539 meV, which suggests a defect in the barrier layer in the device. Two similar nBn detectors are then subjected to 63 MeV proton irradiation in step doses and measured between steps. One experiment is performed in-situ with an nBn held at approximately 10 K during dosing, and the other experiment is performed ex-situ with a similar nBn held at room temperature for dosing. The ex-situ dosing results in an evaluation of the defect introduction rate that is three to four times lower than in-situ due to partial annealing of the proton-induced displacement damage at room temperature. The results for these two experiments are then compared with the dose-dependent recombination rate analysis, resulting in an estimated recombination defect cross-section of 1.6x10^(-13) cm^2 for the shallow shoulder defect.

physics.app-ph↗

arXiv2024

Active Interface Characteristics of Heterogeneously Integrated GaAsSb/Si Photodiodes

There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on integrating GaAsSb (with absorption in the C-band at 1550nm) with silicon to fabricate photodiodes, leveraging epitaxial layer transfer (ELT) methods. Two ELT techniques, epitaxial lift-off (ELO) and macro-transfer printing (MTP), are compared for transferring GaAsSb films from InP substrates to Si, forming PIN diodes. Characterization through atomic force microscopy (AFM), and transmission electron microscopy (TEM) exhibits a high-quality, defect-free interface. Current-voltage (IV) measurements and capacitance-voltage (CV) analysis validate the quality and functionality of the heterostructures. Photocurrent measurements at room temperature and 200 K demonstrate the device's photo-response at 1550 nm, highlighting the presence of an active interface.

physics.app-ph↗

arXiv2024

Structural and Electrical Properties of Grafted Si/GaAsSb Heterojunction

The short-wave infrared (SWIR) wavelength, especially 1.55 um, has attracted significant attention in various areas such as high-speed optical communication and LiDAR systems. Avalanche photodiodes (APDs) are a critical component as a receiver in these systems due to their internal gain which enhances the system performance. Silicon-based APDs are promising since they are CMOS compatible, but they are limited in detecting 1.55 um light detection. This study proposes a p-type Si on n-type GaAs0.51Sb0.49 (GaAsSb) lattice matched to InP substrates heterojunction formed using a grafting technique for future GaAsSb/Si APD technology. A p+Si nanomembrane is transferred onto the GaAsSb/AlInAs/InP substrate, with an ultrathin ALD-Al2O3 oxide at the interface, which behaves as both double-side passivation and quantum tunneling layers. The devices exhibit excellent surface morphology and interface quality, confirmed by atomic force microscope (AFM) and transmission electron microscope (TEM). Also, the current-voltage (I-V) of the p+Si/n-GaAsSb heterojunction shows ideal rectifying characteristics with an ideality factor of 1.15. The I-V tests across multiple devices confirm high consistency and yield. Furthermore, the X-ray photoelectron spectroscopy (XPS) measurement reveals that GaAsSb and Si are found to have type-II band alignment with a conduction band offset of 50 meV which is favorable for the high-bandwidth APD application. The demonstration of the GaAsSb/Si heterojunction highlights the potential to advance current SWIR PD technologies.

physics.app-ph↗