arXiv subjects

Nannan Han

Publications and source records attributed to Nannan Han.

8 recordsLinked to original sources

arXiv2025

Lattice-Distortion-Mediated Proton Pairing and Trapping in Solid State Oxides

Experiments have evidenced proton pairing in Y-doped BaZrO3. However, the nature of proton pairing and its impact on conduction remain insufficiently understood theoretically. Here, through quantitative computational analysis of proton-proton interactions in Y-doped BaZrO3, we identify lattice-distortion-mediated elastic interaction as the key factor determining whether two protons form a stable pair or exhibit net repulsion. When a proton resides at an inward-bending distortion site induced by another proton, the resulting net repulsive interaction leads to an unstable configuration. In contrast, the proton tends to be trapped at a nearby outward-bending site that favors the formation of a stable proton pair. Moreover, the site where the two protons form the lowest-energy configuration also corresponds to a proton trapping site. By calculating the long-range diffusion pathways accessible to protons under different local environments in both single- and two-proton cases, we find that the range of rate-limiting barriers is 0.24-0.45 eV for two-proton conduction and 0.19-0.39 eV for single-proton conduction. The higher and more experimentally consistent barriers in the two-proton pathways indicate that the proton trapping effect induced by pairing hinders proton conduction. Our study elucidates the multi-proton diffusion mechanism, providing a theoretical foundation for the experimental design of electrolytes with enhanced proton conductivity.

cond-mat.mtrl-sci↗

arXiv2025

Hydrogen Bond Strength Dictates the Rate-Limiting Steps of Diffusion in Proton-Conducting Perovskites:A Critical Length Perspective

Identifying the rate-limiting step of proton migration in proton-conducting oxides is essential for assessing and regulating proton conductivity. Proton migration based on the Grotthuss mechanism involves both proton rotation and proton transfer, with the latter typically regarded as the rate-limiting step. However, a universal criterion for identifying the rate-limiting step remains to be established. Here, we perform a quantitative decomposition of the rotation and transfer barriers, revealing that the hydrogen bond to the acceptor oxygen dictates their energy barrier difference via the O$_i$-B-O$_f$ bending mechanism. Based on the energy difference associated with a one-order-of-magnitude variation in residence time, we propose the hydrogen bond length criterion for identifying the rate-limiting step across operating temperatures. Taking the 500 K criterion as an upper limit, when the hydrogen-bond length of systems falls below 2.05~\AA, proton rotation becomes competitive with transfer. Applied to a wider range of perovskite materials, this criterion predicts comparable rotation and transfer rates in cubic structures with small lattice constants, low-valent B-site doped systems with moderate ionic radii, and distorted orthorhombic structures. Our findings provide an atomic-scale insight into the proton migration mechanisms in perovskites, and offer practical guidance for optimizing and designing advanced proton-conducting electrolytes.

cond-mat.mtrl-sci↗

arXiv2023

Approaching the robust linearity in dual-floating van der Waals photodiode

Two-dimensional (2D) material photodetectors have gained great attention as potential elements for optoelectronic applications. However, the linearity of the photoresponse is often compromised by the carrier interaction, even in 2D photodiodes. In this study, we present a new device concept of dual-floating van der Waals heterostructures (vdWHs) photodiode by employing ambipolar MoTe2 and n-type MoS2 2D semiconductors. The presence of type II heterojunctions on both sides of channel layers effectively deplete carriers and restrict the photocarrier trapping within the channel layers. As a result, the device exhibits robust linear photoresponse under photovoltaic mode from the visible (405 nm) to near-infrared (1600 nm) band. With the built-in electric field of the vdWHs, we achieve a linear dynamic range of ~ 100 dB, responsivity of ~ 1.57 A/W, detectivity of ~ 4.28 * 10^11 Jones, and response speed of ~ 30 {\mu}s. Our results showcase a promising device concept with excellent linearity towards fast and low-loss detection, high-resolution imaging, and logic optoelectronics.

cond-mat.mes-hall↗

arXiv2022

Tunable linearity of high-performance vertical dual-gate vdW phototransistor

Layered two-dimensional (2D) semiconductors have been widely exploited in photodetectors due to their excellent electronic and optoelectronic properties. To improve their performance, photogating, photoconductive, photovoltaic, photothermoelectric, and other effects have been used in phototransistors and photodiodes made with 2D semiconductors or hybrid structures. However, it is difficult to achieve the desired high responsivity and linear photoresponse simultaneously in a monopolar conduction channel or a p-n junction. Here we present dual-channel conduction with ambipolar multilayer WSe2 by employing the device concept of dual-gate phototransistor, where p-type and n-type channels are produced in the same semiconductor using opposite dual-gating. It is possible to tune the photoconductive gain using a vertical electric field, so that the gain is constant with respect to the light intensity-a linear photoresponse, with a high responsivity of ~2.5*10^4 A/W. Additionally, the 1/f noise of the device is kept at a low level under the opposite dual-gating due to the reduction of current and carrier fluctuation, resulting in a high detectivity of ~2*10^13 Jones in the linear photoresponse regime. The linear photoresponse and high performance of our dual-gate WSe2 phototransistor offer the possibility of achieving high-resolution and quantitative light detection with layered 2D semiconductors.

cond-mat.mtrl-sci↗

arXiv2022

Strong Second Harmonic Generation from Bilayer Graphene with Symmetry Breaking by Redox-Governed Charge Doping

Missing second-order nonlinearity in centrosymmetric graphene overshadows its intriguing optical attribute. Here, we report redox-governed charge doping could effectively break the centrosymmetry of bilayer graphene (BLG), enabling a strong second harmonic generation (SHG) with a strength close to that of the well-known monolayer MoS2. Verified from control experiments with in situ electrical current annealing and electrically gate-controlled SHG, the required centrosymmetry breaking of the emerging SHG arises from the charge-doping on the bottom layer of BLG by the oxygen/water redox couple. Our results not only reveal that charge doping is an effective way to break the inversion symmetry of BLG despite its strong interlayer coupling but also indicate that SHG spectroscopy is a valid technique to probe molecular doping on two-dimensional materials.

physics.optics↗

arXiv2022

Electrically tunable second harmonic generation in atomically thin ReS2

Electrical tuning of second-order nonlinearity in optical materials is attractive to strengthen and expand the functionalities of nonlinear optical technologies, though its implementation remains elusive. Here, we report the electrically tunable second-order nonlinearity in atomically thin ReS2 flakes benefiting from their distorted 1T crystal structure and interlayer charge transfer. Enabled by the efficient electrostatic control of the few-atomic-layer ReS2, we show that second harmonic generation (SHG) can be induced in odd-number-layered ReS2 flakes which are centrosymmetric and thus without intrinsic SHG. Moreover, the SHG can be precisely modulated by the electric field, reversibly switching from almost zero to an amplitude more than one order of magnitude stronger than that of the monolayer MoS2. For the even-number-layered ReS2 flakes with the intrinsic SHG, the external electric field could be leveraged to enhance the SHG. We further perform the first-principles calculations which suggest that the modification of in-plane second-order hyperpolarizability by the redistributed interlayer-transferring charges in the distorted 1T crystal structure underlies the electrically tunable SHG in ReS2. With its active SHG tunability while using the facile electrostatic control, our work may further expand the nonlinear optoelectronic functions of two-dimensional materials for developing electrically controllable nonlinear optoelectronic devices.

physics.optics↗

arXiv2020

Efficiency at maximum power of thermoelectric heat engines with the symmetric semiconductor superlattice

Efficiency at maximum power (EMP) is a very important specification for a heat engine to evaluate the capacity of outputting adequate power with high efficiency. It has been proved theoretically that the limit EMP of thermoelectric heat engine can be achieved with the hypothetical boxcar-shaped electron transmission, which is realized here by the resonant tunneling in the one-dimensional symmetric InP/InSe superlattice. It is found with the transfer matrix method that a symmetric mode is robust that regardless of the periodicity, and the obtained boxcar-like electron transmission stems from the strong coupling between symmetric mode and Fabry-P\'erot modes inside the allowed band. High uniformity of the boxcar-like transmission and the sharp drop of the transmission edge are both beneficial to the maximum power and the EMP, which are optimized by the bias voltage and the thicknesses of barrier and well. The maximum power and EMP are extracted with the help of machine learning technique, and more than 95% of their theoretical limits can both be achieved for smaller temperature difference, smaller barrier width and larger well width. We hope the obtain results could provide some basic guidance for the future designs of high EMP thermoelectric heat engines.

cond-mat.mes-hall↗

arXiv2019

Machine learning driven synthesis of few-layered WTe2

Reducing the lateral scale of two-dimensional (2D) materials to one-dimensional (1D) has attracted substantial research interest not only to achieve competitive electronic device applications but also for the exploration of fundamental physical properties. Controllable synthesis of high-quality 1D nanoribbons (NRs) is thus highly desirable and essential for the further study. Traditional exploration of the optimal synthesis conditions of novel materials is based on the trial-and-error approach, which is time consuming, costly and laborious. Recently, machine learning (ML) has demonstrated promising capability in guiding material synthesis through effectively learning from the past data and then making recommendations. Here, we report the implementation of supervised ML for the chemical vapor deposition (CVD) synthesis of high-quality 1D few-layered WTe2 nanoribbons (NRs). The synthesis parameters of the WTe2 NRs are optimized by the trained ML model. On top of that, the growth mechanism of as-synthesized 1T' few-layered WTe2 NRs is further proposed, which may inspire the growth strategies for other 1D nanostructures. Our findings suggest that ML is a powerful and efficient approach to aid the synthesis of 1D nanostructures, opening up new opportunities for intelligent material development.

cond-mat.mtrl-sci↗