arXiv subjects

Muhammad Sufyan Ramzan

Publications and source records attributed to Muhammad Sufyan Ramzan.

8 recordsLinked to original sources

arXiv2026

Rational Design of Low-Dimensional Hybrid Organic/Inorganic Interfaces for Enhanced Second-Harmonic Generation

Hybrid interfaces formed by push-pull organic molecules physisorbed on two-dimensional (2D) semiconductors provide a structurally tunable platform for engineering second-harmonic generation (SHG). However, predicting and optimizing their macroscopic response remains a formidable challenge due to the phase-sensitive interference between the nonlinear responses of the adlayer and substrate. Here, we develop a physics-informed computational screening framework that decomposes the effective second-order susceptibility into its constituent substrate, molecular, and electric-field-induced SHG channels. Validated by fully atomistic first-principles calculations across representative interface structures, this model maps the complete orientation-resolved tensor landscape of chemically modulated carbon-conjugated polar molecules on 2D substrates with distinct symmetry. Crucially, our findings dismantle the conventional reliance on static polar descriptors, demonstrating that the ground-state permanent dipole magnitude is a fundamentally unreliable proxy for macroscopic nonlinear response. Instead, we show that the ultimate criterion for SHG maximization is encoded in the phase-resolved projection of the full anisotropic molecular hyperpolarizability tensor. On non-centrosymmetric substrates, the coherent interference between the physisorbed adlayer and the underlying 2D matrix induces a characteristic Fano-like asymmetry and ranking reversals that are entirely absent on centrosymmetric platforms. By establishing that functionalization topology, dynamic spatial orientation, and substrate point-group symmetry constitute a single, non-separable parameter space, this work provides a systematic blueprint for the rational assembly, predictive discovery, and non-invasive characterization of next-generation low-dimensional hybrid materials for nonlinear optoelectronics.

cond-mat.mtrl-sci↗

arXiv2026

All-Optical Control of Interfacial Polarization in MoS$_2$/WSe$_2$ Heterobilayers

All-optical tuning of van der Waals heterostructures with coherent radiation offers a promising path toward ultrafast memory and optoelectronic devices. In the first-principles framework of real-time time-dependent density functional theory, we predict the induction of a persistent, long-lived out-of-plane polarization in MoS$_2$/WSe$_2$ heterobilayers, resonantly driven by intense ultrafast pulses. While weak fields preserve the intrinsic type-II band alignment, intermediate intensities trigger a four-fold enhancement of interlayer charge transfer. By analyzing the high-harmonic generation spectrum, we identify a transition from the perturbative to the strong-field regime inducing photoinduced interfacial polarity. We additionally show that lattice strain, ubiquitously present in heterobilayers, can be used as additional knob to adjust the resonant condition without compromising the permanent dipole induction. Our findings provide a theoretical blueprint for the all-optical manipulation of polar phases in low-dimensional heterostructures at the femtosecond scale.

cond-mat.mtrl-sci↗

arXiv2026

Charge Tunable Optical Nonlinearity of Moiré Exciton-Polaritons

Transition metal dichalcogenides represent a versatile platform to study strong light-matter interactions based on excitons and electrons in ordered lattices. Twist-engineering of moiré structures further enables the manipulation of the polaritonic nonlinearities via engineering the exciton landscape on the nanoscale. In this work, we demonstrate in-situ control of the optical saturation-based nonlinearity of moiré exciton-polaritons by phase space restriction via charge doping. Strong exciton-photon coupling is established in a gate-controllable MoTe$_2$-MoSe$_2$ heterobilayer, embedded in a spectrally-tunable open cavity. A small gate voltage can effectively lower the necessary polariton density by one order of magnitude to achieve a similar nonlinear saturation effect as in the charge-neutral case. Our microscopic description successfully explains the observed phenomena in the framework of Pauli blocking for the moiré superlattices with charge preoccupation.

cond-mat.mes-hall↗

arXiv2026

Highly Efficient Exciton Modulation in MoSe$_2$/PdSe$_2$ Heterostructures

Controlling exciton recombination in atomically thin semiconductors is central to their optoelectronic functionality, as the competition between radiative and non-radiative decay channels governs emission efficiency. Existing approaches, such as defect passivation, chemical doping, dielectric engineering, and strain tuning, primarily aim to suppress non-radiative losses. Here, we report a pronounced $\sim$6-fold enhancement of room-temperature A-exciton emission in a type-I MoSe$_2$/PdSe$_2$ van der Waals heterostructure, yielding a photoluminescence quantum yield of 6 %, compared to $\sim$1 % for as-exfoliated monolayer MoSe$_2$. This enhancement is accompanied by strong quenching of the B-exciton, consistent with interlayer electronic coupling that redistributes exciton populations toward the radiative A-exciton channel. Power- and temperature-dependent measurements reveal a suppression of exciton-exciton annihilation and a crossover to quenched emission at low temperature, indicating a redistribution of exciton relaxation pathways. Photoluminescence excitation spectroscopy further reveals a broadband enhancement spanning 450-725 nm, ruling out a resonance-specific mechanism. These results demonstrate that interlayer electronic coupling can be used as an efficient means to redirect exciton populations toward radiative channels, enhancing emission efficiency in two-dimensional semiconductors without chemical modification or strain.

cond-mat.mes-hall↗

arXiv2026

Atomistic Origin of Photoluminescence Quenching in Colloidal MoS2 and WS2 Nanoplatelets

Large chemical tunability and strong light-matter interactions make colloidal transition metal dichalcogenide (TMD) nanostructures particularly suitable for light-emitting applications. However, ultrafast exciton decay and quenched photoluminescence (PL) limit their potential. Combining femtosecond transient absorption spectroscopy with first-principles calculations on MoS2 and WS2 nanoplatelets, we reveal that the observed sub-picosecond exciton decay originates from edge-located optically bright hole traps. These intrinsic trap states stem from the metal d-orbitals and persist even when the sulfur-terminated edges are hydrogen-passivated. Notably, WS2 nanostructures show more localized and optically active edge states than their MoS2 counterparts, and zigzag edges exhibit a higher trap density than armchair edges. The nanoplatelet size dictates the competition between ultrafast edge-trapping and slower core-exciton recombination, and the states responsible for exciton quenching enhance catalytic activity. Our work represents an important step forward in understanding exciton quenching in TMD nanoplatelets and stimulates additional research to refine physicochemical protocols for enhanced PL.

cond-mat.mtrl-sci↗

arXiv2025

Edge Magnetism in Colloidal MoS2 Triangular Nanoflakes

The control of localized magnetic domains at the nanoscale holds great promise for next-generation spintronic applications. Colloidal transition metal dichalcogenides nanostructures are experimentally accessible and chemically tunable platforms for spintronics, deserving dedicated research to assess their potential. Here, we investigate from first principles free-standing triangular MoS2 nanoflakes with sulfur-terminated, hydrogen-passivated edges, to probe intrinsic spin behavior at varying side lengths. We find a critical edge length of approximately 1.5 nm separating nonmagnetic nanoflakes from larger ones with a magnetic ground state emerging from several, energetically competing spin configurations. In these systems, the magnetic activity is not uniformly distributed along the edges but localized on specific "magnetic islands" around molybdenum edge atoms. The localization of magnetic moments is robust even in non-equilateral nanoflake geometries, highlighting their intrinsic stability regardless of the (high) symmetry of the hosting structure. These findings establish that the S-terminated, H-passivated triangular MoS2 nanoflakes are a stable and experimentally accessible platform via colloidal synthesis for low-dimensional, next-generation spintronic devices.

cond-mat.mtrl-sci↗

arXiv2023

Composition-dependent absorption of radiation in semiconducting MSi2Z4 Monolayers

The recent synthesis of MoSi2N4 material, along with theoretical predictions encompassing the entire family of chemical analogs, has opened up a new array of low-dimensional materials for a diverse range of optoelectronics and photovoltaics applications. In this study, we conducted state-of-the-art many-body first-principles calculations to analyze the quasi-particle electronic structure of the material class MSi2Z4 (where M = Mo, W, and Z = N, P, As, Sb). All monolayers display a direct band gap at the K point, with the exception of MoSi2N4. In tungsten-based compounds, the fundamental-gap can be adjusted over a significantly broader energy range compared to their molybdenum-based counterparts. Additionally, increasing atomic weight of the Z, both the band gap and exciton binding energies decrease. A noteworthy feature is the absence of a lateral valley (Λ or Q) near the conduction band minimum, indicating potential higher photoluminescence efficiencies compared to conventional transition-metal dichalcogenide monolayers. The optical spectra of these materials are predominantly characterized by tightly bound excitons, leading to an absorption onset in the visible range (for N-based) and in the infrared region (for others). This diversity offers promising opportunities to incorporate these materials and their heterostructures into optoelectronic devices, with tandem solar cells being particularly promising.

cond-mat.mtrl-sci↗

arXiv2023

Effect of Coulomb impurities on the electronic structure of magic angle twisted bilayer graphene

In graphene, charged defects break the electron-hole symmetry and can even give rise to exotic collapse states when the defect charge exceeds a critical value which is proportional to the Fermi velocity. In this work, we investigate the electronic properties of twisted bilayer graphene (tBLG) with charged defects using tight-binding calculations. Like monolayer graphene, tBLG exhibits linear bands near the Fermi level but with a dramatically reduced Fermi velocity near the magic angle (approximately 1.1°). This suggests that the critical value of the defect charge in magic-angle tBLG should also be very small. We find that charged defects give rise to significant changes in the low-energy electronic structure of tBLG. Depending on the defect position in the moiré unit cell, it is possible to open a band gap or to induce an additional flattening of the low-energy valence and conduction bands. Our calculations suggest that the collapse states of the two monolayers hybridize in the twisted bilayer. However, their in-plane localization remains largely unaffected by the presence of the additional twisted layer because of the different length scales of the moiré lattice and the monolayer collapse state wavefunctions. These predictions can be tested in scanning tunnelling spectroscopy experiments.

cond-mat.mtrl-sci↗