Minji Shon | arXiv Science

arXiv2026

Physics-informed AI Accelerated Retention Analysis of Ferroelectric Vertical NAND: From Day-Scale TCAD to Second-Scale Surrogate Model

Ferroelectric field-effect transistors (FeFET)-based vertical NAND (Fe-VNAND) has emerged as a promising candidate to overcome z-scaling limitations with lower programming voltages. However, the data retention of 3D Fe-VNAND is hindered by the complex interaction between charge detrapping and ferroelectric depolarization. Developing optimized device designs requires exploring an extensive parameter space, but the high computational cost of conventional Technology Computer-Aided Design (TCAD) tools makes such wide-scale optimization impractical. To overcome these simulation barriers, we present a Physics-Informed Neural Operator (PINO)-based AI surrogate model designed for high-efficiency prediction of threshold voltage (Vth) shifts and retention behavior. By embedding fundamental physical principles into the learning architecture, our PINO framework achieves a speedup exceeding 10000x compared to TCAD while maintaining physical accuracy. The resulting surrogate provides a physics-consistent data engine for compact model parameter extraction and look-up-table (LUT) generation, directly supporting reliability-aware SPICE simulation of Fe-VNAND. This study demonstrates the model's effectiveness on a single FeFET configuration, serving as a pathway toward modeling the retention loss mechanisms.

cs.LG↗

arXiv2025

Optimization and Benchmarking of Monolithically Stackable Gain Cell Memory for Last-Level Cache

The Last Level Cache (LLC) is the processor's critical bridge between on-chip and off-chip memory levels - optimized for high density, high bandwidth, and low operation energy. To date, high-density (HD) SRAM has been the conventional device of choice; however, with the slowing of transistor scaling, as reflected in the industry's almost identical HD SRAM cell size from 5 nm to 3 nm, alternative solutions such as 3D stacking with advanced packaging like hybrid bonding are pursued (as demonstrated in AMD's V-cache). Escalating data demands necessitate ultra-large on-chip caches to decrease costly off-chip memory movement, pushing the exploration of device technology toward monolithic 3D (M3D) integration where transistors can be stacked in the back-end-of-line (BEOL) at the interconnect level. M3D integration requires fabrication techniques compatible with a low thermal budget (<400 degC). Among promising BEOL device candidates are amorphous oxide semiconductor (AOS) transistors, particularly desirable for their ultra-low leakage ( seconds) when used in a gain-cell configuration. This paper examines device, circuit, and system-level tradeoffs when optimizing BEOL-compatible AOS-based 2-transistor gain cell (2T-GC) for LLC. A cache early-exploration tool, NS-Cache, is developed to model caches in advanced 7 and 3 nm nodes and is integrated with the Gem5 simulator to systematically benchmark the impact of the newfound density/performance when compared to HD-SRAM, MRAM, and 1T1C eDRAM alternatives for LLC.

cs.ET↗