Michiel Debaets | arXiv Science

arXiv2026

Graphene-based Photodetector with Engineered Hot Carrier Cooling Dynamics

Graphene has emerged as a promising material for integration into silicon photonics, owing to its ultrafast and broadband photoresponse without the need for an external bias voltage. This photoresponse relies on the photo-thermoelectric effect created by hot carriers. A key factor underlying the performance of graphene photodetectors is the cooling dynamics of these hot carriers. In this work, we engineer these dynamics in a WSe2-graphene-WSe2 waveguide-integrated photodetector. In particular, by introducing proximity screening by a nearby graphite layer to this structure, we prolong the hot-carrier cooling time, leading to an enhanced photoresponse. We characterize the cooling dynamics under continuous-wave laser excitation by employing a photomixing technique, revealing an increase in the cooling time by up to a factor of four. Direct photoresponse measurements show that the internal photoresponsivity improves by approximately 50%. Together, these results demonstrate the potential of proximity screening to enhance the performance of graphene-based photodetectors on an integrated photonics platform.

cond-mat.mes-hall↗

arXiv2025

Engineering high Pockels coefficients in thin-film strontium titanate for cryogenic quantum electro-optic applications

Materials which exhibit the Pockels effect are notable for their strong electro-optic interaction and rapid response times and are therefore used extensively in classical electro-optic components for data and telecommunication applications. Yet many materials optimized for room-temperature operation see their Pockels coefficients at cryogenic temperatures significantly reduced - a major hurdle for emerging quantum technologies which have even more rigorous demands than their classical counterpart. A noted example is $\mathrm{BaTiO_3}$, which features the strongest effective Pockels coefficient at room temperature, only to see it reduced to a third (i.e. $\mathrm{r_{eff}} \approx$ 170 pm/V) at a few Kelvin. Here, we show that this behaviour is not inherent and can even be reversed: Strontium titanate ($\mathrm{SrTiO_3}$), a material normally not featuring a Pockels coefficient, can be engineered to exhibit an $\mathrm{r_{eff}}$ of 345 pm/V at cryogenic temperatures - a record value in any thin-film electro-optic material. By adjusting the stoichiometry, we can increase the Curie temperature and realise a ferroelectric phase that yields a high Pockels coefficient, yet with limited optical losses - on the order of decibels per centimetre. Our findings position $\mathrm{SrTiO_3}$ as one of the most promising materials for cryogenic quantum photonics applications.

physics.optics↗