arXiv subjects

Md Rahatul Islam Udoy

Publications and source records attributed to Md Rahatul Islam Udoy.

10 recordsLinked to original sources

arXiv2026

JFS-CryoMem: A Cryogenic Memory with Voltage-Controlled Superconducting Devices and Femtojoule-Scale Write/Read Energies

Scalable cryogenic systems require memory that combines nonvolatile storage, selective access, low thermal disturbance, and compatibility with superconducting electronics. We present a cryogenic memory architecture that integrates a voltage-controlled Josephson junction field-effect transistor (JJFET) selector with a ferroelectric superconducting quantum interference device (FeSQUID) storage element, hereafter termed JFS-CryoMem. The JJFET provides gate-controlled cell selection, whereas the FeSQUID stores information in stable remanent-polarization states. JFS-CryoMem features separate read and write path mechanisms that support nondestructive readout and independent optimization of programming and sensing conditions. The architecture is evaluated using experimentally calibrated compact models that reproduce the measured electrical characteristics of both constituent devices. We demonstrate selective programming using a half-bias scheme, nonvolatile state retention, and distinguishable readout in a $4 \times 4$ array while accounting for the selected cell and all unselected parallel branches. We then extend the analysis to arrays up to $16 \times 16$ and examine how array scaling alters current distribution, column-equivalent resistance, readout separation, required bitline current, and read energy. The results reveal the principal sensing and energy tradeoffs associated with larger arrays and identify the operating conditions required to preserve read distinguishability as the array grows. JFS-CryoMem provides a device-to-array framework for cryogenic memory in quantum, high-performance, and space-oriented computing systems.

cs.ET↗

arXiv2026

Predictive first-principles simulations for co-designing next-generation energy-efficient AI systems

In modern generative-AI workloads, matrix-vector/matrix-matrix multiplications (\emph{MatMul}) dominate the compute and energy cost. Achieving dramatic reductions in energy per token therefore requires a novel, specialized hardware that is co-designed across materials, devices, interconnects, circuits, and architectures rather than optimized at any single layer in isolation. In this \emph{Perspectives} article, we argue that \emph{predictive} (first-principles, fitting-parameter-free) device and interconnect simulations can close the loop between nanoscale physics and workload-level metrics, enabling the identification of device/interconnect operating regimes that plausibly support \emph{orders-of-magnitude} improvements in energy efficiency of AI accelerators.

cond-mat.other↗

arXiv2026

STEMPix: A Phase-Transition-Material-Based Pixel Sensor for Resolving Edge-Movement Direction

This paper proposes a spatio-temporal edge-movement direction pixel (STEMPix) for generating compact direction-aware edge movement information inside a CMOS-compatible image sensor array. The proposed design targets specialized sensing applications where local boundary movement is more important than full-frame intensity reconstruction. Instead of transferring full multi-bit frames for external processing, STEMPix generates a 3-bit local edge direction code (LEDC) by combining pixel-level temporal change information with neighboring-pixel spatial edge information. We design the architecture using a two-tier organization, where the photodiode layer is separated from the computation layer to preserve light-collection area while accommodating the additional in-array processing circuitry. The proposed circuit is evaluated through HSPICE transient simulations. The estimated implementation achieves a horizontal pitch of 1.73 μm, a vertical pitch of 2.36 μm, and a geometric fill factor of 95.47%. The average active switching energy is 0.465 fJ per LEDC operation across representative edge-movement cases. The proposed STEMPix operation also supports global-shutter capture and dynamic thresholding. These results indicate that STEMPix can provide a compact and scalable front-end representation for edge-movement-aware sensing systems.

cs.ET↗

arXiv2026

ThermoPix: A High-Spatial-Resolution ElectronicPhotonic Temperature Sensor Array With Microsecond Row Readout

This paper presents ThermoPix, a CMOS-compatible electronic-photonic architecture for high-spatial-resolution temperature sensing. The proposed system converts temperature-induced wavelength shifts in a photonic interferometric sensor into timing information that can be processed by CMOS circuitry. We use a valley photonic crystal Mach-Zehnder interferometer (VPCMZI) as the sensing element, whose temperature-dependent spectral response is detected using an integrated waveguide photodetector and translated into a time-varying photocurrent. A CMOS readout circuit employing a phase-transition-material device performs threshold detection and generates a timing signal corresponding to the temperature-dependent crossing event. Circuit-level simulations demonstrate a temperature sensitivity of 3.15 ns/K, a row readout time of 2 us, and a sensing power-delay product (PDP) of 0.152 fJ. The required optical power per photonic cell is 150 nW, enabling energy-efficient array operation without requiring cooling or special environmental arrangements. We also present alternative photonic layer architectures for optical power distribution across the array. In one approach, we use different tap ratios along the row, while the other uses identical tap ratios with bidirectional excitation. The resulting average photonic cell pitches are 23.26 um and 38.52 um, respectively. The proposed ThermoPix architecture therefore provides a scalable platform for integrated temperature sensing arrays that combine photonic sensing elements with CMOS-compatible timing-based readout.

cs.ET↗

arXiv2026

Lightweight True In-Pixel Encryption with FeFET Enabled Pixel Design for Secure Imaging

Ensuring end-to-end security in image sensors has become essential as visual data can be exposed through multiple stages of the imaging pipeline. Advanced protection requires encryption to occur before pixel values appear on any readout lines. This work introduces a secure pixel sensor (SecurePix), a compact CMOS-compatible pixel architecture that performs true in-pixel encryption using a symmetric key realized through programmable, non-volatile multidomain polarization states of a ferroelectric field-effect transistor. The pixel and array operations are designed and simulated in HSPICE, while a 45 nm CMOS process design kit is used for layout drawing. The resulting layout confirms a pixel pitch of 2.33 x 3.01 um^2. Each pixel's non-volatile programming level defines its analog transfer characteristic, enabling the photodiode voltage to be converted into an encrypted analog output within the pixel. Full-image evaluation shows that ResNet-18 recognition accuracy drops from 99.29 percent to 9.58 percent on MNIST and from 91.33 percent to 6.98 percent on CIFAR-10 after encryption, indicating strong resistance to neural-network-based inference. Lookup-table-based inverse mapping enables recovery for authorized receivers using the same symmetric key. Based on HSPICE simulation, the SecurePix achieves a per-pixel programming power-delay product of 17 uW us and a per-pixel sensing power-delay product of 1.25 uW us, demonstrating low-overhead hardware-level protection.

cs.CV↗

arXiv2026

A Review of Multiscale Thermal Modeling in Heterogeneous 3D ICs

Thermal behavior has become a first-order constraint in advanced 2.5D/3D integrated circuits (ICs) and heterogeneous packages. As power densities rise and multiple active dies are vertically integrated, heat removal paths become constricted, elevating junction temperatures, magnifying temperature gradients, and exacerbating reliability risks. This review synthesizes the physical mechanisms, modeling assumptions, and analysis methods that govern multiscale thermal transport in 3D ICs, with emphasis on interface-dominated conduction, material anisotropy, and strong electrothermal coupling. We unify device-to-system scales into a coherent framework, analyzing trade-offs among compact thermal models (CTMs), finite element/finite difference methods (FEM/FDM), Green's function and semi-analytical techniques, reduced-order and multi-fidelity methods, and physics-informed machine learning (PIML), while highlighting the central role of thermal boundary resistance (TBR) and variability in thermal interface materials (TIMs), the pitfalls of decoupled electrical/thermal analyses, and the need for rigorous validation against measurements. Finally, we outline practical design guidelines and a forward-looking research agenda that integrates physics-based modeling, data-driven surrogates, and in situ sensing to enable thermally aware co-optimization across the IC-package-system hierarchy.

cs.AR↗

arXiv2025

Multi-Domain FeFET-Based Pixel for In-Sensor Multiply-and-Accumulate Operations

This paper presents an FeFET-based active pixel sensor that performs in-sensor multiply-and-accumulate (MAC) operations by leveraging the multi-domain polarization states of ferroelectric layers. The proposed design integrates a programmable FeFET into a 3-transistor pixel circuit, where the FeFET's non-volatile conductance encodes the weight, and the photodiode voltage drop encodes the input. Their interaction generates an output current proportional to the product, enabling in-pixel analog multiplication. Accumulation is achieved by summing output currents along shared column lines, realizing full MAC functionality within the image sensor array. Extensive HSPICE simulations, using 45 nm CMOS models, validate the operation and confirm the scalability of the design. This compact and power-efficient architecture minimizes data movement, making it ideal for real-time edge computing, neuromorphic vision, and secure sensing applications.

eess.IV↗

arXiv2024

A Review on Digital Pixel Sensors

Digital pixel sensor (DPS) has evolved as a pivotal component in modern imaging systems and has the potential to revolutionize various fields such as medical imaging, astronomy, surveillance, IoT devices, etc. Compared to analog pixel sensors, the DPS offers high speed and good image quality. However, the introduced intrinsic complexity within each pixel, primarily attributed to the accommodation of the ADC circuit, engenders a substantial increase in the pixel pitch. Unfortunately, such a pronounced escalation in pixel pitch drastically undermines the feasibility of achieving high-density integration, which is an obstacle that significantly narrows down the field of potential applications. Nonetheless, designing compact conversion circuits along with strategic integration of 3D architectural paradigms can be a potential remedy to the prevailing situation. This review article presents a comprehensive overview of the vast area of DPS technology. The operating principles, advantages, and challenges of different types of DPS circuits have been analyzed. We categorize the schemes into several categories based on ADC operation. A comparative study based on different performance metrics has also been showcased for a well-rounded understanding.

cs.CV↗

arXiv2024

In-Pixel Foreground and Contrast Enhancement Circuits with Customizable Mapping

This paper presents an innovative in-pixel contrast enhancement circuit that performs image processing directly within the pixel circuit. The circuit can be tuned for different modes of operation. In foreground enhancement mode, it suppresses low-intensity background pixels to nearly zero, isolating the foreground for better object visibility. In contrast enhancement mode, it improves overall image contrast. The contrast enhancement function is customizable both during the design phase and in real-time, allowing the circuit to adapt to specific applications and varying lighting conditions. A model of the designed pixel circuit is developed and applied to a full pixel array, demonstrating significant improvements in image quality. Simulations performed in HSPICE show a nearly 6x increase in Michelson Contrast Ratio (CR) in the foreground enhancement mode. The simulation results indicate its potential for real-time, adaptive contrast enhancement across various imaging environments.

cs.CV↗

arXiv2024

Harnessing Ferro-Valleytricity in Penta-Layer Rhombohedral Graphene for Memory and Compute

Two-dimensional materials with multiple degrees of freedom, including spin, valleys, and orbitals, open up an exciting avenue for engineering multifunctional devices. Beyond spintronics, these degrees of freedom can lead to novel quantum effects such as valley-dependent Hall effects and orbital magnetism, which could revolutionize next-generation electronics. However, achieving independent control over valley polarization and orbital magnetism has been a challenge due to the need for large electric fields. A recent breakthrough involving penta-layer rhombohedral graphene has demonstrated the ability to individually manipulate anomalous Hall signals and orbital magnetic hysteresis, forming what is known as a valley-magnetic quartet. Here, we leverage the electrically tunable Ferro-valleytricity of penta-layer rhombohedral graphene to develop non-volatile memory and in-memory computation applications. We propose an architecture for a dense, scalable, and selector-less non-volatile memory array that harnesses the electrically tunable ferro-valleytricity. In our designed array architecture, non-destructive read and write operations are conducted by sensing the valley state through two different pairs of terminals, allowing for independent optimization of read/write peripheral circuits. The power consumption of our PRG-based array is remarkably low, with only ~ 6 nW required per write operation and ~ 2.3 nW per read operation per cell. This consumption is orders of magnitude lower than that of the majority of state-of-the-art cryogenic memories. Additionally, we engineer in-memory computation by implementing majority logic operations within our proposed non-volatile memory array without modifying the peripheral circuitry. Our framework presents a promising pathway toward achieving ultra-dense cryogenic memory and in-memory computation capabilities.

cond-mat.mes-hall↗