arXiv subjects

Matthieu Jamet

Publications and source records attributed to Matthieu Jamet.

At least 19 recordsLinked to original sources

arXiv2026

High temperature ferromagnetism in epitaxial monolayers of Co-doped Fe5GeTe2

Magnetic van der Waals materials have mainly been investigated in their bulk form or as few-layers flakes. Due to the challenges in producing atomically thin films, only a few have been isolated as monolayers, which typically exhibit long-range magnetic order below 150 K. In this work, we use molecular beam epitaxy to synthesize Co-doped Fe5GeTe2, achieving precise control over both thickness and composition. We demonstrate ferromagnetism well above room temperature in multilayer samples and present clear evidence of ferromagnetic ordering in monolayers up to $\sim$200 K. The changes in Curie temperature and magnetic anisotropy with composition exhibit similar trends in both monolayers and thicker films, indicating that the magnetic properties are primarily governed by intralayer magnetic interactions. Through element-specific X-ray magnetic circular dichroism and density functional theory, we identify the substitution site of Co dopants and reveal the mechanism behind the Curie temperature enhancement induced by Co doping. Our findings suggest that, despite their weak magnetic moment, Co dopants strengthen the magnetic moments on neighboring Fe atoms and enhance the intralayer ferromagnetic exchange interactions.

cond-mat.mtrl-sci↗

arXiv2026

Thickness-Dependent Spintronic Terahertz Emission in MBE-Grown PtTe$_2$: From Semiconductor to Type-II Dirac Semimetal

Spintronic terahertz (THz) emitters have established themselves as among the most practical broadband THz sources available, yet their performance remains fundamentally limited by the spin Hall conductivity of the nonmagnetic conversion layer - a quantity that is fixed once the material is chosen. Here, we demonstrate that in PtTe$_2$, a type-II Dirac semimetal within the transition metal dichalcogenide family, this limitation can be circumvented by exploiting the dramatic thickness-driven electronic phase evolution of the material itself. Using molecular beam epitaxy to grow PtTe$_2$ films with single-monolayer precision from 1 to 20 ML, we show that the spintronic THz emission tracks the underlying electronic phase diagram directly: it is absent in the single-layer semiconducting phase, turns on sharply at the semimetal transition near 2 ML, and reaches a peak amplitude six times that of an equivalent Pt reference at 10 ML, before declining at larger thicknesses due to THz reabsorption in the increasingly metallic film. This non-monotonic behavior is inconsistent with a bulk inverse spin Hall mechanism and instead reflects a multi-channel spin-to-charge conversion process in which spin-momentum-locked topological surface states and a thickness-dependent interfacial Rashba splitting both contribute and strengthen as the type-II Dirac band structure develops. First-principles calculations of the interfacial spin accumulation reproduce the experimental trend quantitatively, confirming this physical picture. These findings introduce thickness engineering of van der Waals semimetals as a new and accessible route to optimizing spintronic THz emitters and spin-orbit torques in magnetic memories (SOT-MRAMs), with direct implications for the broader class of dimensionally tunable topological materials.

cond-mat.mtrl-sci↗

arXiv2026

A new method to probe conducting filaments in MoS$_2$-based memristors

Two-dimensional (2D) transition metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS$_2$), are emerging as promising materials for next-generation electronic devices. They have proved to be serious candidates for integration with memristors in non-volatile memory and radio frequency (RF) applications. However, the physical mechanisms behind their resistive switching, particularly the formation and resorption of conducting filaments, remain unclear. In this study, we present a novel mechanical exfoliation technique that selectively removes the top metallic electrode from MoS$_2$-based memristors by exploiting the weak van der Waals interaction between MoS$_2$ and the top electrode. This method enables direct and multi-scale characterization of the MoS$_2$ surface in different states (initial, ON and OFF) using Kelvin Probe Force Microscopy (KPFM) and Raman spectroscopy mapping. To complete this study, cross-sectional Transmission Electron Microscopy (TEM) was also performed in different conductive states. Our results reveal that the conducting filament is formed by metallic atom migration from the top electrode into the MoS$_2$ layer. Additionally, we demonstrate that the choice of metallic electrodes (gold vs. nickel) significantly impacts the switching behavior due to differences in adsorption and diffusion energies. This work not only clarifies the filament formation mechanism and introduces a reproducible approach for in-operando characterization but also represents a real progress in the understanding and optimization of 2D material-based memristors.

cond-mat.mtrl-sci↗

arXiv2026

Rashba engineering at van der Waals interfaces

Two-dimensional transition metal dichalcogenide (TMD) interfaces offer a versatile platform for studying emergent quantum phenomena and enabling novel device functionalities. When distinct TMD monolayers are stacked vertically or laterally stitched, their interfaces can exhibit unique electronic band alignments, giving rise to long-lived interlayer excitons, charge transfer effects, and moir\'e superlattices with correlated states. Here, we demonstrate that the interface between a large variety of two different epitaxially grown TMD monolayers controls the intensity and sign of the Rashba spin splitting, which is probed using THz spintronic emission. Optimized TMD heterobilayers, such as HfSe$_2$/PtSe$_2$, show enhanced THz emission that surpass the spin-to-charge conversion efficiency of bulk TMDs, confirming the presence of Rashba states with large spin splitting at the interface. By combining spin- and angle-resolved photoemission spectroscopy with density functional theory, we reveal that the electronic hybridization between the two different TMD monolayers gives rise to extended in-gap states with strong Rashba spin-orbit coupling. The choice of TMD layers enables to engineer the sign and strength of spin-to-charge conversion in van der Waals heterobilayers opening up perspectives to build efficient and tunable THz spintronic emitters.

cond-mat.mes-hall↗

arXiv2025

Spin and Orbital Rashba response in ferroelectric polarized PtSe$_2$/MoSe$_2$/LiNbO$_3$ heterostructures

Recent studies using Terahertz Time-Domain Spectroscopy (THz-TDS) with spintronic emitters as a source have revealed distinct signatures of the Rashba effect. This effect, which arises from the breaking of inversion symmetry in low-dimensional materials, has been recently investigated in CoFeB/PtSe$_2$/MoSe$_2$/LiNbO$_3$-based heterostructures [S. Massabeau et al., APL Mater. 13, 041102, 2025 ]. The observed phenomena are at the source of the generated THz far-field emission, typically through mechanisms such as spin-to-charge conversion triggered by the absorption of ultrafast optical pulses. In this work, we employ first-principles simulations to quantify the Rashba effect at PtSe$_2$/MoSe$_2$/LiNbO$_3$ interfaces, expanding the traditional understanding of spin transport by incorporating the orbital degree of freedom. Moreover, we quantify the degree of control on the THz emission depending on the polarization direction of LiNbO$_3$. In order to achieve this, we analyze the accumulation of both spin and orbital components using linear response theory, revealing distinct behaviors. These findings are crucial for a deeper understanding of the physical processes governing angular momentum-to-charge conversion and THz emission. Moreover, they may provide broader insights into various experimental outcomes, including those related to spin-orbit torque.

cond-mat.mes-hall↗

arXiv2025

Room temperature magnetic vortices in the van der Waals magnet Fe$_5$GeTe$_2$

We investigate the effect of confinement on the magnetic state of a 12 nm-thick Fe$_5$GeTe$_2$ layer grown by molecular beam epitaxy. We use quantitative scanning NV magnetometry to locally extract the magnetization in rectangular uniformly in-plane magnetized microstructures, showing no enhancement of the Curie temperature compared to magnetization measurements performed before patterning the film, in contrast to previous results obtained on thick Fe$_3$GeTe$_2$ flakes. Under the application of a weak out-of-plane magnetic field, we observe the stabilization of magnetic vortices at room temperature in micrometric squares. Finally, we highlight the effect of the size of the patterned micro-discs and micro-squares on the stabilization of the vortices using experiments and micromagnetic simulations. Our work thus proposes and demonstrates a way to stabilize non-collinear textures at room temperature in a van der Waals magnets using confinement, although we also show that this approach alone is not successful to enhance the Curie temperature of Fe$_5$GeTe$_2$ significantly above 300 K.

cond-mat.mtrl-sci↗

arXiv2025

Robust spin splitting and fermiology in a layered altermagnet

Altermagnetism defies conventional classifications of collinear magnetic phases, standing apart from ferromagnetism and antiferromagnetism with its unique combination of spin-dependent symmetries, net-zero magnetization, and anomalous Hall transport. Although altermagnetic states have been realized experimentally, their integration into functional devices has been hindered by the structural rigidity and poor tunability of existing materials. First, through cobalt intercalation of the superconducting 2H-NbSe$_2$ polymorph, we induce and stabilize a robust altermagnetic phase and using both theory and experiment, we directly observe the lifting of Kramers degeneracy. Additionally, we present spectroscopic insight into a previously hinted low-temperature phase, and provide evidence of its electronic origin. While shedding light on overlooked aspects of altermagnetism, these findings open pathways to spin-based technologies and lay a foundation for advancing the emerging field of altertronics.

cond-mat.str-el↗

arXiv2024

Bilayer orthogonal ferromagnetism in CrTe$_2$-based van der Waals system

Systems with pronounced spin anisotropy play a pivotal role in advancing magnetization switching and spin-wave generation mechanisms, which are fundamental for spintronic technologies. Quasi-van der Waals ferromagnets, particularly Cr$_{1+\delta}$Te$_2$ compounds, represent seminal materials in this field, renowned for their delicate balance between frustrated layered geometries and magnetism. Despite extensive investigation, the precise nature of their magnetic ground state, typically described as a canted ferromagnet, remains contested, as does the mechanism governing spin reorientation under external magnetic fields and varying temperatures. In this work, we leverage a multimodal approach, integrating complementary techniques, to reveal that Cr$_{1+\delta}$Te$_2$ ($\delta = 0.25 - 0.50$) hosts a previously overlooked magnetic phase, which we term orthogonal-ferromagnetism. This single phase consists of alternating atomically sharp single layers of in-plane and out-of-plane ferromagnetic blocks, coupled via exchange interactions and as such, it differs significantly from crossed magnetism, which can be achieved exclusively by stacking multiple heterostructural elements together. Contrary to earlier reports suggesting a gradual spin reorientation in CrTe$_2$-based systems, we present definitive evidence of abrupt spin-flop-like transitions. This discovery, likely due to the improved crystallinity and lower defect density in our samples, repositions Cr$_{1+\delta}$Te$_2$ compounds as promising candidates for spintronic and orbitronic applications, opening new pathways for device engineering.

cond-mat.str-el↗

arXiv2024

Two-dimensional to bulk crossover of the WSe$_2$ electronic band structure

Transition Metal Dichalcogenides (TMD) are layered materials obtained by stacking two-dimensional sheets weakly bonded by van der Waals interactions. In bulk TMD, band dispersions are observed in the direction normal to the sheet plane (z-direction) due to the hybridization of out-of-plane orbitals but no kz-dispersion is expected at the single-layer limit. Using angle-resolved photoemission spectroscopy, we precisely address the two-dimensional to three-dimensional crossover of the electronic band structure of epitaxial WSe$_2$ thin films. Increasing number of discrete electronic states appears in given kz-ranges while increasing the number of layers. The continuous bulk dispersion is nearly retrieved for 6-sheet films. These results are reproduced by calculations going from a relatively simple tight-binding model to a sophisticated KKR-Green's function calculation. This two-dimensional system is hence used as a benchmark to compare different theoretical approaches.

cond-mat.mtrl-sci↗

arXiv2024

Magnetic evolution of Cr$_2$Te$_3$ epitaxially grown on graphene with post-growth annealing

Two-dimensional and van der Waals ferromagnets are ideal platform to study low dimensional magnetism and proximity effects in van der Waals heterostructures. Their ultimate two dimensional character offers also the opportunity to easily adjust their magnetic properties using strain or electric fields. Among 2D ferromagnets, the Cr$_{1+x}$Te$_2$ compounds with $x$=0-1 are very promising because their magnetic properties depend on the amount of self-intercalated Cr atoms between pure CrTe$_2$ layers and the Curie temperature (T$_C$) can reach room temperature for certain compositions. Here, we investigate the evolution of the composition, structural and magnetic properties of thin Cr$_{1.33}$Te$_2$ (Cr$_2$Te$_3$) films epitaxially grown on graphene upon annealing. We observe a transition above 450{\deg}C from the Cr$_{1.33}$Te$_2$ phase with perpendicular magnetic anisotropy and a T$_C$ of 180 K to a composition close to Cr$_{1.39}$Te$_2$ with in-plane magnetic anisotropy and a T$_C$ of 240-250 K. This phase remains stable up to 650{\deg}C above which a pure Cr film starts to form. This work demonstrates the complex interplay between intercalated Cr, lattice parameters and magnetic properties in Cr$_{1+x}$Te$_2$ compounds.

cond-mat.mtrl-sci↗

arXiv2024

Development and optimization of large-scale integration of 2D material in memristors

Two-dimensional (2D) materials like transition metal dichalcogenides (TMD) have proved to be serious candidates to replace silicon in several technologies with enhanced performances. In this respect, the two remaining challenges are the wafer scale growth of TMDs and their integration into operational devices using clean room compatible processes. In this work, two different CMOS-compatible protocols are developed for the fabrication of MoS$_2$-based memristors, and the resulting performances are compared. The quality of MoS$_2$ at each stage of the process is characterized by Raman spectroscopy and x-ray photoemission spectroscopy. In the first protocol, the structure of MoS$_2$ is preserved during transfer and patterning processes. However, a polymer layer with a minimum thickness of 3 nm remains at the surface of MoS$_2$ limiting the electrical switching performances. In the second protocol, the contamination layer is completely removed resulting in improved electrical switching performances and reproducibility. Based on physico-chemical and electrical results, the switching mechanism is discussed in terms of conduction through grain boundaries.

physics.app-ph↗

arXiv2023

Mapping domain junctions using 4D-STEM: toward controlled properties of epitaxially grown transition metal dichalcogenide monolayers

Epitaxial growth has become a promising route to achieve highly crystalline continuous two-dimensional layers. However, high-quality layer production with expected electrical properties is still challenging due to the defects induced by the coalescence between imperfectly aligned domains. In order to control their intrinsic properties at the device scale, the synthesized materials should be described as a patchwork of coalesced domains. Here, we report multi-scale and multistructural analysis on highly oriented epitaxial WS$_2$ and WSe$_2$ monolayers using scanning transmission electron microscopy (STEM) techniques. Characteristic domain junctions are first identified and classified based on the detailed atomic structure analysis using aberration corrected STEM imaging. Mapping orientation, polar direction and phase at the micrometer scale using four-dimensional STEM enabled to access the density and the distribution of the specific domain junctions. Our results validate a readily applicable process for the study of highly oriented epitaxial transition metal dichalcogenides, providing an overview of synthesized materials from large scale down to atomic scale with multiple structural information.

cond-mat.mtrl-sci↗

arXiv2023

Epitaxial van der Waals heterostructures of Cr2Te3 on 2D materials

Achieving large-scale growth of two-dimensional (2D) ferromagnetic materials with high Curie temperature (TC) and perpendicular magnetic anisotropy (PMA) is highly desirable for the development of ultra-compact magnetic sensors and magnetic memories. In this context, van der Waals (vdW) Cr2Te3 appears as a promising candidate. Bulk Cr2Te3 exhibits strong PMA and a TC of 180 K. Moreover, both PMA and TC might be adjusted in ultrathin films by engineering composition, strain, or applying an electric field. In this work, we demonstrate the molecular beam epitaxy (MBE) growth of vdW heterostructures of five-monolayer quasi-freestanding Cr2Te3 on three classes of 2D materials: graphene (semimetal), WSe2 (semiconductor) and Bi2Te3 (topological insulator). By combining structural and chemical analysis down to the atomic level with ab initio calculations, we confirm the single crystalline character of Cr2Te3 films on the 2D materials with sharp vdW interfaces. They all exhibit PMA and TC close to the bulk Cr2Te3 value of 180 K. Ab initio calculations confirm this PMA and show how its strength depends on strain. Finally, Hall measurements reveal a strong anomalous Hall effect, which changes sign at a given temperature. We theoretically explain this effect by a sign change of the Berry phase close to the Fermi level. This transition temperature depends on the 2D material in proximity, notably as a consequence of charge transfer. MBE-grown Cr2Te3/2D material bilayers constitute model systems for the further development of spintronic devices combining PMA, large spin-orbit coupling and sharp vdW interface.

cond-mat.mtrl-sci↗

arXiv2023

Spin-orbit torque switching in 2D ferromagnet / topological insulator heterostructure grown by molecular beam epitaxy

Topological insulators (TIs) are a promising class of materials for manipulating the magnetization of an adjacent ferromagnet (FM) through the spin-orbit torque (SOT) mechanism. However, current studies combining TIs with conventional FMs present large device-to-device variations, resulting in a broad distribution of SOT magnitudes. It has been identified that the interfacial quality between the TI and the FM is of utmost importance in determining the nature and efficiency of the SOT. To optimize the SOT magnitude and enable ultra-low-power magnetization switching, an atomically smooth interface is necessary. To this end, we have developed the growth of a full van der Waals FM/TI heterostructure by molecular beam epitaxy. The compensated TI (Bi0.4Sb0.6)2Te3 and ferromagnetic Fe3GeTe2 (FGT) were chosen because of their exceptional crystalline quality, low carrier concentration in BST and relatively large Curie temperature and perpendicular magnetic anisotropy in FGT. We characterized the magnitude of the SOTs by using thorough harmonic magnetotransport measurements and showed that the magnetization of an ultrathin FGT film could be switched with a current density Jc < 10^10 A/m^2. In comparison to previous studies utilizing traditional FMs, our findings are highly reliable, displaying little to no variation between devices.

cond-mat.mes-hall↗

arXiv2022

Visualizing giant ferroelectric gating effects in large-scale WSe$_2$/BiFeO$_3$ heterostructures

Multilayers based on quantum materials (complex oxides, topological insulators, transition-metal dichalcogenides, etc) have enabled the design of devices that could revolutionize microelectronics and optoelectronics. However, heterostructures incorporating quantum materials from different families remain scarce, while they would immensely broaden the range of possible applications. Here we demonstrate the large-scale integration of compounds from two highly-multifunctional families: perovskite oxides and transition-metal dichalcogenides (TMDs). We couple BiFeO$_3$, a room-temperature multiferroic oxide, and WSe$_2$, a semiconducting two-dimensional material with potential for photovoltaics and photonics. WSe$_2$ is grown by molecular beam epitaxy and transferred on a centimeter-scale onto BiFeO$_3$ films. Using angle-resolved photoemission spectroscopy, we visualize the electronic structure of 1 to 3 monolayers of WSe$_2$ and evidence a giant energy shift as large as 0.75 eV induced by the ferroelectric polarization direction in the underlying BiFeO$_3$. Such a strong shift opens new perspectives in the efficient manipulation of TMDs properties by proximity effects.

cond-mat.mtrl-sci↗

arXiv2022

Evidence for Highly p-type doping and type II band alignment in large scale monolayer WSe2 /Se-terminated GaAs heterojunction grown by Molecular beam epitaxy

Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III-V semiconductors. Here, we report the structural and electronic properties of single layer WSe2 grown by molecular beam epitaxy on Se-terminated GaAs(111)B. Reflection high-energy electron diffraction images exhibit sharp streaky features indicative of a high-quality WSe2 layer produced via vdW epitaxy. This is confirmed by in-plane x-ray diffraction. The single layer of WSe2 and the absence of interdiffusion at the interface are confirmed by high resolution X-ray photoemission spectroscopy and high-resolution transmission microscopy. Angle-resolved photoemission investigation revealed a well-defined WSe2 band dispersion and a high p-doping coming from the charge transfer between the WSe2 monolayer and the Se-terminated GaAs substrate. By comparing our results with local and hybrid functionals theoretical calculation, we find that the top of the valence band of the experimental heterostructure is close to the calculations for free standing single layer WSe2. Our experiments demonstrate that the proximity of the Se-terminated GaAs substrate can significantly tune the electronic properties of WSe2. The valence band maximum (VBM, located at the K point of the Brillouin zone) presents an upshifts of about 0.56 eV toward the Fermi level with respect to the VBM of WSe2 on graphene layer, which is indicative of high p-type doping and a key feature for applications in nanoelectronics and optoelectronics.

cond-mat.mes-hall↗

arXiv2022

Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy

Nearly localized moire flat bands in momentum space, arising at particular twist angles, are the key to achieve correlated effects in transition-metal dichalcogenides. Here, we use angle-resolved photoemission spectroscopy (ARPES) to visualize the presence of a flat band near the Fermi level of van der Waals (vdW) WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy. This flat band is localized near the K point of the Brillouin zone and has a width of several hundred meVs. By combining ARPES measurements with density functional theory (DFT) calculations, we confirm the coexistence of different domains, namely the reference 2H stacking without layer misorientation and regions with arbitrary twist angles. For the 2H-stacked heterobilayer, our ARPES results show strong interlayer hybridization effects, further confirmed by complementary micro- Raman spectroscopy measurements. The spin-splitting of the valence band at K is determined to be 470 meV. The valence band maximum (VBM) position of the heterobilayer is located at the Gamma point. The energy difference between the VBM at Gamma and the K point is of -60 meV, which is a stark difference compared to individual 1L WSe2 and 1L WSe2, showing both a VBM at K.

cond-mat.mtrl-sci↗

arXiv2021

Phonon dynamics and thermal conductivity of PtSe2 thin films: Impact of crystallinity and film thickness on heat dissipation

We present a comparative investigation of the influence of crystallinity and film thickness on the acoustic and thermal properties of 2D layered PtSe2 thin films of varying thickness (0.6-24 nm) by combining a set of experimental techniques, namely, frequency domain thermo-reflectance, low-frequency Raman and pump-probe coherent phonon spectroscopy. We find a 35% reduction in the cross-plane thermal conductivity of polycrystalline films with thickness larger than 12 nm compared to the crystalline films of the same thickness due to phonon grain boundary scattering. Density functional theory calculations are in good agreement with the experiments and further reveal the ballistic nature of cross-plane heat transport in PtSe2 up to a certain thickness (~20 nm). In addition, our experiments revealed strong interlayer interactions in PtSe2, short acoustic phonon lifetimes in the range of picoseconds, out-of-plane elastic constant C33=31.8 GPa and layer-dependent group velocity ranging from 1340 m/s in bilayer PtSe2 to 1873 m/s in 8 layers of PtSe2. The potential of tuning the lattice cross-plane thermal conductivity of layered 2D materials with the level of crystallinity and the real-time observation of coherent phonon dynamics, which have direct implications on the cooling and transport of electrons, open a new playground for research in 2D thermoelectric devices and provide guidelines for thermal management in 2D electronics.

cond-mat.mtrl-sci↗