arXiv subjects

Matthew Cothrine

Publications and source records attributed to Matthew Cothrine.

12 recordsLinked to original sources

arXiv2026

Observation of magnetically switchable quantum geometric photocurrents

In non-centrosymmetric materials, light can be rectified into two types of DC photocurrents, known as injection and shift currents, through the bulk photovoltaic effect. Recent theory has uncovered their deep relation with the two-state quantum geometry of resonant transitions: In non-magnetic crystals, where these currents have been routinely observed, the injection current responds to circular light and probes the Berry curvature, while the shift current responds to linear light and probes the geometric connection. Magnetic crystals have been predicted to show a new set of hitherto unobserved magnetically switchable photocurrents, with the roles of linear and circular light interchanged: A linear injection current, which probes the quantum metric, and a circular shift current, which probes the geometric torsion. In this work, we demonstrate the existence of such currents for the first time, demonstrating the switching of the current by flipping the N\'eel vector in a van der Waals antiferromagnet. Furthermore, their specific frequency and temperature dependence confirm the assignment of circular shift and linear injection currents. Our work demonstrates a new way to control photocurrents in magnets that are directly tied to geometry and have promising applications in antiferromagnetic spintronics and light harvesting.

cond-mat.mtrl-sci↗

arXiv2025

$\alpha$-RuCl$_3$ intercalated into graphite: a new three-dimensional platform for exotic quantum phases

Multilayer graphene with different stacking sequences has emerged as a powerful setting for correlated and topological phases. In parallel, progress in graphene heterostructures with magnetic or correlated materials-most notably the Kitaev candidate $\alpha$-RuCl$_3$-has demonstrated charge transfer, magnetic proximity effects, and interfacial reconstruction, creating new opportunities for engineered quantum systems. Motivated by these developments, we explore a three-dimensional analogue in which $\alpha$-RuCl$_3$ layers are inserted directly into the van der Waals gaps of graphite, forming an intercalated system. Here, we report the successful synthesis and comprehensive characterization of graphite intercalated with $\alpha$-RuCl$_3$. Using a combination of X-ray diffraction, quantum oscillation measurements, and first-principles electronic structure calculations, we study the structural and electronic properties of these intercalated crystals. Our results demonstrate that graphite intercalated with $\alpha$-RuCl$_3$ offers a robust route to develop three-dimensional materials with access to novel correlated and topological states.

cond-mat.str-el↗

arXiv2025

Dynamic Interfacial Quantum Dipoles in Charge Transfer Heterostructures

Hysteretic gate responses of two-dimensional material heterostructures serve as sensitive probes of the underlying electronic states and hold significant promise for the development of novel nanoelectronic devices. Here we identify a new mechanism of hysteretic behavior in graphene/$h$BN/$\alpha$-$\mathrm{RuCl_3}$ charge transfer field effect devices. The hysteresis loop exhibits a sharp onset under low temperatures and evolves symmetrically relative to the charge transfer equilibrium. Unlike conventional flash memory devices, the charge transfer heterostructure features a transparent tunneling barrier and its hysteretic gate response is induced by the dynamic tuning of interfacial dipoles originating from quantum exchange interactions. The system acts effectively as a ferroelectric and gives rise to remarkable tunability of the hysteretic gate response under external electrical bias. Our work unveils a novel mechanism for engineering hysteretic behaviors via dynamic interfacial quantum dipoles.

cond-mat.mes-hall↗

arXiv2025

Cavity-altered superconductivity

Is it feasible to alter the ground state properties of a material by engineering its electromagnetic environment? Inspired by theoretical predictions, experimental realizations of such cavity-controlled properties without optical excitation are beginning to emerge. Here, we devised and implemented a novel platform to realize cavity-altered materials. Single crystals of hyperbolic van der Waals (vdW) compounds provide a resonant electromagnetic environment with enhanced density of photonic states and prominent mode confinement. We interfaced hexagonal boron nitride (hBN) with the molecular superconductor $\kappa$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Br ($\kappa$-ET). The frequencies of infrared (IR) hyperbolic modes of hBN match the IR-active carbon-carbon stretching molecular resonance of ($\kappa$-ET) implicated in superconductivity. Nano-optical data supported by first-principles molecular Langevin dynamics simulations confirm the presence of resonant coupling between the hBN hyperbolic cavity modes and the carbon-carbon stretching mode in ($\kappa$-ET). Meissner effect measurements via magnetic force microscopy demonstrate a strong suppression of superfluid density near the hBN/($\kappa$-ET) interface. Non-resonant control heterostructures, including RuCl$_3$/($\kappa$-ET) and hBN/$\text{Bi}_2\text{Sr}_2\text{CaCu}_2\text{O}_{8+x}$, do not display the superfluid suppression. These observations suggest that hBN/($\kappa$-ET) realizes a cavity-altered superconducting ground state. Our work highlights the potential of dark cavities devoid of external photons for engineering electronic ground state properties of complex quantum materials.

cond-mat.supr-con↗

arXiv2024

Quantum Oscillations Evidence for Topological Bands in Kagome Metal ScV6Sn6

Metals with kagome lattice provide bulk materials to host both the flat-band and Dirac electronic dispersions. A new family of kagome metals is recently discovered in AV6Sn6. The Dirac electronic structures of this material need more experimental evidence to confirm. In the manuscript, we investigate this problem by resolving the quantum oscillations in both electrical transport and magnetization in ScV6Sn6. The revealed orbits are consistent with the electronic band structure models. Furthermore, the Berry phase of a dominating orbit is revealed to be around $\pi$, providing direct evidence for the topological band structure, which is consistent with calculations. Our results demonstrate a rich physics and shed light on the correlated topological ground state of this kagome metal.

cond-mat.str-el↗

arXiv2024

Imprinting spin patterns by local strain control in a van der Waals antiferromagnet

Van der Waals magnets provide opportunities for exploring low-dimensional magnetism and spintronic phenomena. The Mermin-Wagner theorem states that long-range correlations in reduced dimensions are stabilized and controlled by magnetic anisotropy. In this study, we meticulously create and control the in-plane easy-axis magnetic anisotropy within two-dimensional (2D) van der Waals antiferromagnet MnPSe3 via a novel method involving topography and therefore strain control by using a micro-patterned substrate. By transposing the MnPSe3 thin flakes onto a substrate patterned with micro-scale grooves, we introduce local uniaxial strain pattern, which not only locks the spin direction to the strain direction but also replicates the groove pattern in the spin orientation distribution. Our approach generates spin orientations that correspond to the substrate patterns, therefore having the potential to significantly advance spintronic devices by offering a unique method for manipulating and designing spin textures in easy-plane magnets.

cond-mat.mtrl-sci↗

arXiv2024

Superconductivity in twisted bilayer WSe$_2$

The discovery of superconductivity in twisted bilayer and twisted trilayer graphene has generated tremendous interest. The key feature of these systems is an interplay between interlayer coupling and a moir\'e superlattice that gives rise to low-energy flat bands with strong correlations. Flat bands can also be induced by moir\'e patterns in lattice-mismatched and or twisted heterostructures of other two-dimensional materials such as transition metal dichalcogenides (TMDs). Although a wide range of correlated phenomenon have indeed been observed in the moir\'e TMDs, robust demonstration of superconductivity has remained absent. Here we report superconductivity in 5 degree twisted bilayer WSe$_2$ (tWSe$_2$) with a maximum critical temperature of 426 mK. The superconducting state appears in a limited region of displacement field and density that is adjacent to a metallic state with Fermi surface reconstruction believed to arise from antiferromagnetic order. A sharp boundary is observed between the superconducting and magnetic phases at low temperature, reminiscent of spin-fluctuation mediated superconductivity. Our results establish that moir\'e flat-band superconductivity extends beyond graphene structures. Material properties that are absent in graphene but intrinsic among the TMDs such as a native band gap, large spin-orbit coupling, spin-valley locking, and magnetism offer the possibility to access a broader superconducting parameter space than graphene-only structures.

cond-mat.mes-hall↗

arXiv2023

Charge-transfer Contact to a High-Mobility Monolayer Semiconductor

Two-dimensional (2D) semiconductors, such as the transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical contacts that perform well at low temperatures and low densities where quantum properties are relevant. Here we present a new device architecture for 2D semiconductors that utilizes a charge-transfer layer to achieve large hole doping in the contact region, and implement this technique to measure magneto-transport properties of high-purity monolayer WSe$_2$. We measure a record-high hole mobility of 80,000 cm$^2$/Vs and access channel carrier densities as low as $1.6\times10^{11}$ cm$^{-2}$, an order of magnitude lower than previously achievable. Our ability to realize transparent contact to high-mobility devices at low density enables transport measurement of correlation-driven quantum phases including observation of a low temperature metal-insulator transition in a density and temperature regime where Wigner crystal formation is expected, and observation of the fractional quantum Hall effect under large magnetic fields. The charge transfer contact scheme paves the way for discovery and manipulation of new quantum phenomena in 2D semiconductors and their heterostructures.

cond-mat.mes-hall↗

arXiv2023

Signatures of Z$_3$ Vestigial Potts-nematic order in van der Waals antiferromagnets

Layered van der Waals magnets have attracted much recent attention as a promising and versatile platform for exploring intrinsic two-dimensional magnetism. Within this broader class, the transition metal phosphorous trichalcogenides $M$P$X_3$ stand out as particularly interesting, as they provide a realization of honeycomb lattice magnetism and are known to display a variety of magnetic ordering phenomena as well as superconductivity under pressure. One example, found in a number of different materials, is commensurate single-$Q$ zigzag antiferromagnetic order, which spontaneously breaks the spatial threefold $(C_3)$ rotation symmetry of the honeycomb lattice. The breaking of multiple distinct symmetries in the magnetic phase suggests the possibility of a sequence of distinct transitions as a function of temperature, and a resulting intermediate $\mathbb{Z}_3$-nematic phase which exists as a paramagnetic vestige of zigzag magnetic order -- a scenario known as vestigial ordering. Here, we report the observation of key signatures of vestigial Potts-nematic order in rhombohedral FePSe$_3$. By performing linear dichroism imaging measurements -- an ideal probe of rotational symmetry breaking -- we find that the $C_3$ symmetry is already broken above the N\'eel temperature. We show that these observations are explained by a general Ginzburg-Landau model of vestigial nematic order driven by magnetic fluctuations and coupled to residual strain. An analysis of the domain structure as temperature is lowered and a comparison with zigzag-ordered monoclinic FePS$_3$ reveals a broader applicability of the Ginzburg-Landau model in the presence of external strain, and firmly establishes the $M$P$X_3$ magnets as a new experimental venue for studying the interplay between Potts-nematicity, magnetism and superconductivity.

cond-mat.str-el↗

arXiv2023

Direct visualization of the charge transfer in Graphene/$\alpha$-RuCl$_3$ heterostructure

We investigate the electronic properties of a graphene and $\alpha$-ruthenium trichloride (hereafter RuCl$_3$) heterostructure, using a combination of experimental and theoretical techniques. RuCl$_3$ is a Mott insulator and a Kitaev material, and its combination with graphene has gained increasing attention due to its potential applicability in novel electronic and optoelectronic devices. By using a combination of spatially resolved photoemission spectroscopy, low energy electron microscopy, and density functional theory (DFT) calculations we are able to provide a first direct visualization of the massive charge transfer from graphene to RuCl$_3$, which can modify the electronic properties of both materials, leading to novel electronic phenomena at their interface. The electronic band structure is compared to DFT calculations that confirm the occurrence of a Mott transition for RuCl$_3$. Finally, a measurement of spatially resolved work function allows for a direct estimate of the interface dipole between graphene and RuCl$_3$. The strong coupling between graphene and RuCl$_3$ could lead to new ways of manipulating electronic properties of two-dimensional lateral heterojunction. Understanding the electronic properties of this structure is pivotal for designing next generation low-power opto-electronics devices.

cond-mat.mtrl-sci↗

arXiv2022

Ultra-sharp lateral $p\text{-}n$ junctions in modulation-doped graphene

We demonstrate ultra-sharp (${\lesssim}\,10\text{ nm}$) lateral $p\text{-}n$ junctions in graphene using electronic transport, scanning tunneling microscopy, and first principles calculations. The $p\text{-}n$ junction lies at the boundary between differentially-doped regions of a graphene sheet, where one side is intrinsic and the other is charge-doped by proximity to a flake of $\alpha$-RuCl$_3$ across a thin insulating barrier. We extract the $p\text{-}n$ junction contribution to the device resistance to place bounds on the junction width. We achieve an ultra-sharp junction when the boundary between the intrinsic and doped regions is defined by a cleaved crystalline edge of $\alpha$-RuCl$_3$ located 2 nm from the graphene. Scanning tunneling spectroscopy in heterostructures of graphene, hexagonal boron nitride, and $\alpha$-RuCl$_3$ shows potential variations on a sub-10 nm length scale. First principles calculations reveal the charge-doping of graphene decays sharply over just nanometers from the edge of the $\alpha$-RuCl$_3$ flake.

cond-mat.mes-hall↗

arXiv2021

Nanometer-scale lateral p-n junctions in graphene/$\alpha$-RuCl$_3$ heterostructures

The ability to create high-quality lateral p-n junctions at nanometer length scales is essential for the next generation of two-dimensional (2D) electronic and plasmonic devices. Using a charge-transfer heterostructure consisting of graphene on $\alpha$-RuCl$_3$, we conduct a proof-of-concept study demonstrating the existence of intrinsic nanoscale lateral p-n junctions in the vicinity of graphene nanobubbles. Our multi-pronged experimental approach incorporates scanning tunneling microscopy (STM) and spectroscopy (STS) and scattering-type scanning near-field optical microscopy ($\textit{s}$-SNOM) in order to simultaneously probe both the electronic and optical responses of nanobubble p-n junctions. Our STM and STS results reveal that p-n junctions with a band offset of more than 0.6 eV can be achieved over lateral length scale of less than 3 nm, giving rise to a staggering effective in-plane field in excess of 10$^8$ V/m. Concurrent $\textit{s}$-SNOM measurements confirm the utility of these nano-junctions in plasmonically-active media, and validate the use of a point-scatterer formalism for modeling surface plasmon polaritons (SPPs). Model $\textit{ab initio}$ density functional theory (DFT) calculations corroborate our experimental data and reveal a combination of sub-angstrom and few-angstrom decay processes dictating the dependence of charge transfer on layer separation. Our study provides experimental and conceptual foundations for the use of charge-transfer interfaces such as graphene/$\alpha$-RuCl$_3$ to generate p-n nano-junctions.

cond-mat.mes-hall↗