arXiv subjects

Matt Warren

Publications and source records attributed to Matt Warren.

4 recordsLinked to original sources

arXiv2026

Single event effects in the HCCStar ASICs for ITk strip upgrade

Triple Modular Redundancy (TMR) technology has been implemented in the design of the HCCStar to reduce digital state changes and ensure reliable operation. We tested the effectiveness of the protection by placing HCCStar chips in a proton beam. We studied corrected bit flips in registers and actual single event effects in the LCB and LP paths under different proton energies. Our estimate is that the LP data-loss fraction relative to the 400 kHz readout is $O(10^{-10})$ during normal operation and there will be $O(10)$ corrected bit flips per HCCStar bit per year at the HL-LHC.

physics.ins-det↗

arXiv2026

Impact of Cold Noise on the tracking performance of ATLAS ITk short strip barrel modules using a charged particle beam

The inner tracking system of the ATLAS experiment will be upgraded to a full silicon detector in 2030 for HL-LHC. The new tracking system is called ITk, the Inner Tracker. It is required to be operable with efficiency higher than 99\% and noise hit occupancy smaller than 0.1\%. During the pre-production phase of the ITk project, many short-strip modules were observed to exhibit so-called "Cold Noise (CN)", wherein clusters of strips displayed very high noise when the modules were operated at temperatures below~$-35\degree$C. To investigate the CN impact and ensure the quality of module production, huge amount of effort have been put in by the collaboration. This paper focuses on the impact of CN on the tracking performance by examining two short strip modules that exhibit CN: one is non-irradiated, while the other one has been irradiated to the maximum expected end-of-lifetime fluence. For each module, the global and single strip tracking performance are evaluated.

physics.ins-det↗

arXiv2016

Investigations into the impact of locally modified sensor architectures on the detection efficiency of silicon micro-strip sensors

The High Luminosity Upgrade of the LHC will require the replacement of the Inner Detector of ATLAS with the Inner Tracker (ITk) in order to cope with higher radiation levels and higher track densities. Prototype silicon strip detector modules are currently developed and their performance is studied in both particle test beams and X-ray beams. In previous test beam studies of prototype modules, silicon sensor strips were found to respond in regions varying from the strip pitch of 74.5 {\upmu}m. The variations have been linked to local features of the sensor architecture. This paper presents results of detailed sensor measurements in both X-ray and particle beams investigating the impact of sensor features (metal pads and p-stops) on the responding area of a sensor strip.

physics.ins-det↗

arXiv2016

Characterisation of silicon microstrip detectors for the ATLAS Phase-II Upgrade with a micro-focused X-ray beam

The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity up to 6*10^34 cm^-2 s^-1. A consequence of this increased luminosity is the expected radiation damage at 3000 fb^-1 after ten years of operation, requiring the tracking detectors to withstand fluences to over 1*10^16 1 MeV n_eq/cm^2 . In order to cope with the consequent increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip tracker region of the ITk were characterized at the Diamond Light Source with a 3 um FWHM 15 keV micro focused X-ray beam. The devices under test were a 320 Um thick silicon stereo (Barrel) ATLAS12 strip mini sensor wire bonded to a 130 nm CMOS binary readout chip (ABC130) and a 320 Um thick full size radial (end-cap) strip sensor - utilizing bi-metal readout layers - wire bonded to 250 nm CMOS binary readout chips (ABCN-25). A resolution better than the inter strip pitch of the 74.5 um strips was achieved for both detectors. The effect of the p-stop diffusion layers between strips was investigated in detail for the wire bond pad regions. Inter strip charge collection measurements indicate that the effective width of the strip on the silicon sensors is determined by p-stop regions between the strips rather than the strip pitch.

physics.ins-det↗