arXiv subjects

Mathieu Luisier

Publications and source records attributed to Mathieu Luisier.

At least 37 records · Page 2Linked to original sources

arXiv2025

Ab-initio Quantum Transport with the GW Approximation, 42,240 Atoms, and Sustained Exascale Performance

Designing nanoscale electronic devices such as the currently manufactured nanoribbon field-effect transistors (NRFETs) requires advanced modeling tools capturing all relevant quantum mechanical effects. State-of-the-art approaches combine the non-equilibrium Green's function (NEGF) formalism and density functional theory (DFT). However, as device dimensions do not exceed a few nanometers anymore, electrons are confined in ultra-small volumes, giving rise to strong electron-electron interactions. To account for these critical effects, DFT+NEGF solvers should be extended with the GW approximation, which massively increases their computational intensity. Here, we present the first implementation of the NEGF+GW scheme capable of handling NRFET geometries with dimensions comparable to experiments. This package, called QuaTrEx, makes use of a novel spatial domain decomposition scheme, can treat devices made of up to 84,480 atoms, scales very well on the Alps and Frontier supercomputers (>80% weak scaling efficiency), and sustains an exascale FP64 performance on 42,240 atoms (1.15 Eflop/s).

cs.DC↗

arXiv2025

Distributed Equivariant Graph Neural Networks for Large-Scale Electronic Structure Prediction

Equivariant Graph Neural Networks (eGNNs) trained on density-functional theory (DFT) data can potentially perform electronic structure prediction at unprecedented scales, enabling investigation of the electronic properties of materials with extended defects, interfaces, or exhibiting disordered phases. However, as interactions between atomic orbitals typically extend over 10+ angstroms, the graph representations required for this task tend to be densely connected, and the memory requirements to perform training and inference on these large structures can exceed the limits of modern GPUs. Here we present a distributed eGNN implementation which leverages direct GPU communication and introduce a partitioning strategy of the input graph to reduce the number of embedding exchanges between GPUs. Our implementation shows strong scaling up to 128 GPUs, and weak scaling up to 512 GPUs with 87% parallel efficiency for structures with 3,000 to 190,000 atoms on the Alps supercomputer.

cs.LG↗

arXiv2025

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells

Valence change memory (VCM) cells based on SrTiO$_3$ (STO), a perovskite oxide, are a promising type of emerging memory device. While the operational principle of most VCM cells relies on the growth and dissolution of one or multiple conductive filaments, those based on STO are known to exhibit a distinctive, 'interface-type' switching, which is associated with the modulation of the Schottky barrier at their active electrode. Still, a detailed picture of the processes that lead to interface-type switching is not available. In this work, we use a fully atomistic and ab initio model to study the resistive switching of a Pt-STO-Ti stack. We identify that the termination of the crystalline STO plays a decisive role in the switching mechanism, depending on the relative band alignment between the material and the Pt electrode. In particular, we show that the accumulation of oxygen vacancies at the Pt side can be at the origin of resistive switching in TiO$_2$-terminated devices by lowering the conduction band minimum of the STO layer, thus facilitating transmission through the Schottky barrier. Moreover, we investigate the possibility of filamentary switching in STO and reveal that it is most likely to occur at the Pt electrode of the SrO-terminated cells.

cond-mat.mtrl-sci↗

arXiv2025

Ab initio functional-independent calculations of the clamped Pockels tensor of tetragonal barium titanate

We present an ab initio method to calculate the clamped Pockels tensor of ferroelectric materials from density-functional theory, the modern theory of polarization exploiting the electric-enthalpy functional, and automated first- and second-order finite-difference derivatives of the polarizations and the Hellmann-Feynman forces. Thanks to the functional-independent capabilities of our approach, we can determine the Pockels tensor of tetragonal barium titanate (BTO) beyond the local density approximation (LDA), with arbitrary exchange-correlation (XC) functionals, for example, PBEsol. The latter, together with RRKJ ultra-soft pseudo-potentials (PP) and a supercell exhibiting local titanium off-centering, enables us to stabilize the negative optical phonon modes encountered in tetragonal BTO when LDA and norm-conserving PP are combined. As a result, the correct value range of $r_{51}$, the largest experimental Pockels coefficient of BTO, is recovered. We also reveal that $r_{51}$ increases with decreasing titanium off-centering for this material. The lessons learned from the structural, dielectric, and vibrational investigations of BTO will be essential to design next-generation electro-optical modulators based on the Pockels effect.

cond-mat.mtrl-sci↗

arXiv2025

Learning the Electronic Hamiltonian of Large Atomic Structures

Graph neural networks (GNNs) have shown promise in learning the ground-state electronic properties of materials, subverting ab initio density functional theory (DFT) calculations when the underlying lattices can be represented as small and/or repeatable unit cells (i.e., molecules and periodic crystals). Realistic systems are, however, non-ideal and generally characterized by higher structural complexity. As such, they require large (10+ Angstroms) unit cells and thousands of atoms to be accurately described. At these scales, DFT becomes computationally prohibitive, making GNNs especially attractive. In this work, we present a strictly local equivariant GNN capable of learning the electronic Hamiltonian (H) of realistically extended materials. It incorporates an augmented partitioning approach that enables training on arbitrarily large structures while preserving local atomic environments beyond boundaries. We demonstrate its capabilities by predicting the electronic Hamiltonian of various systems with up to 3,000 nodes (atoms), 500,000+ edges, ~28 million orbital interactions (nonzero entries of H), and $\leq$0.53% error in the eigenvalue spectra. Our work expands the applicability of current electronic property prediction methods to some of the most challenging cases encountered in computational materials science, namely systems with disorder, interfaces, and defects.

cond-mat.mtrl-sci↗

arXiv2025

Simulation of single hole spin qubit in strained triangular FinFET quantum devices

Using an in-house Schroedinger-Poisson (SP) solver, we investigate the creation of a single hole spin qubit inside a triple-gate triangular silicon fin field effect transistor (Si FinFET) quantum device similar to experimental structures. The gate induced formation of the required quantum dot (QD) is monitored based on the Luttinger-Kohn 6x6 kp method accounting for magnetic fields and strain to determine the qubit ground state. Strain arises from the inhomogeneous contraction of the different FinFET components when they are cooled down to cryogenic temperatures. It leads to a renormalization of the qubit energy levels, thus impacting both the heavy-hole (HH) and light-hole (LH) populations as well as their mixing. The dot length, band mixing, g-factor, and Larmor/Rabi frequencies of the considered device are extracted. In particular, we show that these metrics exhibit strong strain-dependent variations of their magnitude, thus underlying the importance of including realistic thermal contraction scenarios when modeling hole spin qubits.

quant-ph↗

arXiv2025

Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering

A critical issue affecting filamentary resistive random access memory (RRAM) cells is the requirement of high voltages during electroforming. Reducing the magnitude of these voltages is of significant interest, as it ensures compatibility with Complementary Metal-Oxide-Semiconductor (CMOS) technologies. Previous studies have identified that changing the initial stoichiometry of the switching layer and/or implementing thermal engineering approaches has an influence over the electroforming voltage magnitude, but the exact mechanisms remain unclear. Here, we develop an understanding of how these mechanisms work within a standard a-HfO$_x$/Ti RRAM stack through combining atomistic driven-Kinetic Monte Carlo (d-KMC) simulations with experimental data. By performing device-scale simulations at atomistic resolution, we can precisely model the movements of point defects under applied biases in structurally inhomogeneous materials, which allows us to not only capture finite-size effects but also to understand how conductive filaments grow under different electroforming conditions. Doing atomistic simulations at the device-level also enables us to link simulations of the mechanisms behind conductive filament formation with trends in experimental data with the same material stack. We identify a transition from primarily vertical to lateral ion movement dominating the filamentary growth process in sub-stoichiometric oxides, and differentiate the influence of global and local heating on the morphology of the formed filaments. These different filamentary structures have implications for the dynamic range exhibited by formed devices in subsequent SET/RESET operations. Overall, our results unify the complex ion dynamics in technologically relevant HfO$_x$/Ti-based stacks, and provide guidelines that can be leveraged when fabricating devices.

cond-mat.mtrl-sci↗

arXiv2025

Serinv: A Scalable Library for the Selected Inversion of Block-Tridiagonal with Arrowhead Matrices

The inversion of structured sparse matrices is a key but computationally and memory-intensive operation in many scientific applications. There are cases, however, where only particular entries of the full inverse are required. This has motivated the development of so-called selected-inversion algorithms, capable of computing only specific elements of the full inverse. Currently, most of them are either shared-memory codes or limited to CPU implementations. Here, we introduce Serinv, a scalable library providing distributed, GPU-based algorithms for the selected inversion and Cholesky decomposition of positive-definite, block-tridiagonal arrowhead matrices. This matrix class is highly relevant in statistical climate modeling and materials science applications. The performance of Serinv is demonstrated on synthetic and real datasets from statistical air temperature prediction models. In our numerical tests, Serinv achieves 32.3% strong and 47.2% weak scaling efficiency and up to two orders of magnitude speedup over the sparse direct solvers PARDISO and MUMPS on 16 GPUs.

cs.DC↗

arXiv2024

Electron-Electron Interactions in Device Simulation via Non-equilibrium Green's Functions and the GW Approximation

The continuous scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) has led to device geometries where charged carriers are increasingly confined to ever smaller channel cross sections. This development is associated with reduced screening of long-range Coulomb interactions. To accurately predict the behavior of such ultra-scaled devices, electron-electron (e-e) interactions must be explicitly incorporated in their quantum transport simulation. In this paper, we present an \textit{ab initio} atomistic simulation framework based on density functional theory, the non-equilibrium Green's function formalism, and the self-consistent GW approximation to perform this task. The implemented method is first validated with a carbon nanotube test structure before being applied to calculate the transfer characteristics of a silicon nanowire MOSFET in a gate-all-around configuration. As a consequence of e-e scattering, the energy and spatial distribution of the carrier and current densities both significantly change, while the on-current of the transistor decreases owing to the Coulomb repulsion between the electrons. Furthermore, we demonstrate how the resulting bandgap modulation of the nanowire channel as a function of the gate-to-source voltage could potentially improve the device performance. To the best of our knowledge, this study is the first one reporting large-scale atomistic quantum transport simulations of nano-devices under non-equilibrium conditions and in the presence of e-e interactions within the GW approximation.

cond-mat.mes-hall↗

arXiv2024

Influence of Carrier-Carrier Interactions on the Sub-threshold Swing of Band-to-Band Tunnelling Transistors

Band-to-band tunnelling field-effect transistors (TFETs) have long been considered as promising candidates for future low-power logic applications. However, fabricated TFETs rarely reach sub-60 mV/dec sub-threshold swings (SS) at room temperature. Previous theoretical studies identified Auger processes as possible mechanisms for the observed degradation of SS. Through first-principles quantum transport simulations incorporating carrier-carrier interactions within the Non-equilibrium Green's Function formalism and self-consistent GW approximation, we confirm here that Auger processes are indeed at least partly responsible for the poor performance of TFETs. Using a carbon nanotube TFET as testbed, we show that carrier-carrier scattering alone significantly increases the OFF-state current of these devices, thus worsening their sub-threshold behavior.

cond-mat.mes-hall↗

arXiv2024

Invariant subspaces and PCA in nearly matrix multiplication time

Approximating invariant subspaces of generalized eigenvalue problems (GEPs) is a fundamental computational problem at the core of machine learning and scientific computing. It is, for example, the root of Principal Component Analysis (PCA) for dimensionality reduction, data visualization, and noise filtering, and of Density Functional Theory (DFT), arguably the most popular method to calculate the electronic structure of materials. Given Hermitian $H,S\in\mathbb{C}^{n\times n}$, where $S$ is positive-definite, let $Π_k$ be the true spectral projector on the invariant subspace that is associated with the $k$ smallest (or largest) eigenvalues of the GEP $HC=SCΛ$, for some $k\in[n]$. We show that we can compute a matrix $\widetildeΠ_k$ such that $\lVertΠ_k-\widetildeΠ_k\rVert_2\leq ε$, in $O\left( n^{ω+η}\mathrm{polylog}(n,ε^{-1},κ(S),\mathrm{gap}_k^{-1}) \right)$ bit operations in the floating point model, for some $ε\in(0,1)$, with probability $1-1/n$. Here, $η>0$ is arbitrarily small, $ω\lesssim 2.372$ is the matrix multiplication exponent, $κ(S)=\lVert S\rVert_2\lVert S^{-1}\rVert_2$, and $\mathrm{gap}_k$ is the gap between eigenvalues $k$ and $k+1$. To achieve such provable "forward-error" guarantees, our methods rely on a new $O(n^{ω+η})$ stability analysis for the Cholesky factorization, and a smoothed analysis for computing spectral gaps, which can be of independent interest. Ultimately, we obtain new matrix multiplication-type bit complexity upper bounds for PCA problems, including classical PCA and (randomized) low-rank approximation.

cs.DS↗

arXiv2024

Single Neuromorphic Memristor closely Emulates Multiple Synaptic Mechanisms for Energy Efficient Neural Networks

Biological neural networks do not only include long-term memory and weight multiplication capabilities, as commonly assumed in artificial neural networks, but also more complex functions such as short-term memory, short-term plasticity, and meta-plasticity - all collocated within each synapse. Here, we demonstrate memristive nano-devices based on SrTiO3 that inherently emulate all these synaptic functions. These memristors operate in a non-filamentary, low conductance regime, which enables stable and energy efficient operation. They can act as multi-functional hardware synapses in a class of bio-inspired deep neural networks (DNN) that make use of both long- and short-term synaptic dynamics and are capable of meta-learning or "learning-to-learn". The resulting bio-inspired DNN is then trained to play the video game Atari Pong, a complex reinforcement learning task in a dynamic environment. Our analysis shows that the energy consumption of the DNN with multi-functional memristive synapses decreases by about two orders of magnitude as compared to a pure GPU implementation. Based on this finding, we infer that memristive devices with a better emulation of the synaptic functionalities do not only broaden the applicability of neuromorphic computing, but could also improve the performance and energy costs of certain artificial intelligence applications.

cs.NE↗

arXiv2023

Phonon-Limited Transport in 2D Materials: A Unified Approach for ab initio Mobility and Current Calculations

This paper presents an ab initio methodology to account for electron-phonon interactions in 2D materials, focusing on transition metal dichalcogenides (TMDCs). It combines density functional theory and maximally localized Wannier functions to acquire material data and relies on the linearized Boltzmann transport equation (LBTE) and the non-equilibrium Green's functions (NEGF) method to determine the transport properties of materials and devices, respectively. It is shown that for MoS$_2$, both LBTE and NEGF return very close mobility values, without the need to adjust any parameter. The excellent agreement between both approaches results from the inclusion of non-diagonal entries in the electron-phonon scattering self-energies. The NEGF solver is then used to shed light on the "current vs. voltage" characteristics of a monolayer MoS$_2$ transistor, highlighting how the interactions with phonons impact both the current magnitude and its distribution. The mobility of other TMDCs is considered as well, demonstrating the capabilities of the proposed technique to assess the potential of 2D channel materials in next-generation logic applications.

cond-mat.mes-hall↗

arXiv2023

Field-Effect Transistors based on 2-D Materials: a Modeling Perspective

Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D technology has not yet reached the same level of maturity as its Silicon counterpart, device simulation can be of great help to predict the ultimate performance of 2D FETs and provide experimentalists with reliable design guidelines. In this paper, an ab initio modelling approach dedicated to well-known and exotic 2D materials is presented and applied to the simulation of various components, from thermionic to tunnelling transistors based on mono- and multi-layer channels. Moreover, the physics of metal - 2D semiconductor contacts is revealed and the importance of different scattering sources on the mobility of selected 2D materials is discussed. It is expected that modeling frameworks similar to the one described here will not only accompany future developments of 2D devices, but will also enable them.

cond-mat.mes-hall↗

arXiv2023

Ab initio Self-consistent GW Calculations in Non-Equilibrium Devices: Auger Recombination and Electron-Electron Scattering

We present first-principles quantum transport simulations of single-walled carbon nanotubes based on the NEGF method and including carrier-carrier interactions within the self-consistent GW approximation. Motivated by the characteristic enhancement of interaction between charge carriers in one-dimensional systems, we show that the developed framework can predict Auger recombination, hot carrier relaxation, and impact ionization in this type of nanostructures. Using the computed scattering rates, we infer the inverse electron-hole pair lifetimes for different Auger processes in several device configurations.

cond-mat.mes-hall↗

arXiv2023

Approximate Euclidean lengths and distances beyond Johnson-Lindenstrauss

A classical result of Johnson and Lindenstrauss states that a set of $n$ high dimensional data points can be projected down to $O(\log n/ε^2)$ dimensions such that the square of their pairwise distances is preserved up to a small distortion $ε\in(0,1)$. It has been proved that the JL lemma is optimal for the general case, therefore, improvements can only be explored for special cases. This work aims to improve the $ε^{-2}$ dependency based on techniques inspired by the Hutch++ Algorithm, which reduces $ε^{-2}$ to $ε^{-1}$ for the related problem of implicit matrix trace estimation. We first present an algorithm to estimate the Euclidean lengths of the rows of a matrix. We prove for it element-wise probabilistic bounds that are at least as good as standard JL approximations in the worst-case, but are asymptotically better for matrices with decaying spectrum. Moreover, for any matrix, regardless of its spectrum, the algorithm achieves $ε$-accuracy for the total, Frobenius norm-wise relative error using only $O(ε^{-1})$ queries. This is a quadratic improvement over the norm-wise error of standard JL approximations. We also show how these results can be extended to estimate (i) the Euclidean distances between data points and (ii) the statistical leverage scores of tall-and-skinny data matrices, which are ubiquitous for many applications, with analogous theoretical improvements. Proof-of-concept numerical experiments are presented to validate the theoretical analysis.

cs.DS↗

arXiv2023

Platinum contacts for 9-atom-wide armchair graphene nanoribbons

Creating a good contact between electrodes and graphene nanoribbons (GNRs) has been a longstanding challenge in searching for the next GNR-based nanoelectronics. This quest requires the controlled fabrication of sub-20 nm metallic gaps, a clean GNR transfer minimizing damage and organic contamination during the device fabrication, as well as work function matching to minimize the contact resistance. Here, we transfer 9-atom-wide armchair-edged GNRs (9-AGNRs) grown on Au(111)/mica substrates to pre-patterned platinum electrodes, yielding polymer-free 9-AGNR field-effect transistor devices. Our devices have a resistance in the range of $10^6$ to $10^8$ $Ω$ in the low-bias regime, which is 2 to 4 orders of magnitude lower than previous reports. Density functional theory (DFT) calculations combined with the non-equilibrium Green's function method (NEGF) explain the observed p-type electrical characteristics and further demonstrate that platinum gives strong coupling and higher transmission in comparison to other materials such as graphene.

cond-mat.mes-hall↗

arXiv2022

An Atomistic Model of Field-Induced Resistive Switching in Valence Change Memory

In Valence Change Memory (VCM) cells, the conductance of an insulating switching layer is reversibly modulated by creating and redistributing point defects under an external field. Accurate simulations of the switching dynamics of these devices can be difficult due to their typically disordered atomic structures and inhomogeneous arrangements of defects. To address this, we introduce an atomistic framework for modelling VCM cells. It combines a stochastic Kinetic Monte Carlo approach for atomic rearrangement with a quantum transport scheme, both parameterized at the ab-initio level by using inputs from Density Functional Theory (DFT). Each of these steps operates directly on the underlying atomic structure. The model thus directly relates the energy landscape and electronic structure of the device to its switching characteristics. We apply this model to simulate non-volatile switching between high- and low-resistance states in an TiN/HfO2/Ti/TiN stack, and analyze both the kinetics and stochasticity of the conductance transitions. We also resolve the atomic nature of current flow resulting from the valence change mechanism, finding that conductive paths are formed between the undercoordinated Hf atoms neighboring oxygen vacancies. The model developed here can be applied to different material systems to evaluate their resistive switching potential, both for use as conventional memory cells and as neuromorphic computing primitives.

cond-mat.dis-nn↗