arXiv subjects

Martin Ebert

Publications and source records attributed to Martin Ebert.

5 recordsLinked to original sources

arXiv2026

Mid-infrared germanium-on-silicon waveguide sensor for therapeutic drug monitoring of phenytoin

We report the design, fabrication and characterization of evanescent mid-infrared germanium-on-silicon waveguide sensors for therapeutic drug monitoring (TDM). TDM requires rapid and accurate quantification of serum drug levels but existing clinical assays rely on laboratory-based instrumentation that limits point-of-care deployment. In this work, tunable diode laser absorption spectroscopy was used to analyze dried samples of the anti-seizure medication phenytoin in the spectral region of $\lambda$ = 5.6 - 6.0 $\mu$m. A limit of detection of 2.20 mg/L was achieved for extracted samples, where phenytoin was first added to human serum and subsequently isolated using liquid-liquid extraction. This limit is significantly below the therapeutic window of 10 - 20 mg/L for phenytoin, enabling detection of sub-therapeutic concentrations. At the same time, the sensor maintains a consistent dose-dependent response up to 40 mg/L, demonstrating its capability to quantify concentrations across the therapeutic window and above the upper therapeutic limit. This validates the use of silicon photonics for biomedical infrared spectroscopy for patients undergoing drug therapy, whether the serum-drug concentration is either too high or too low. These results highlight the potential of mid-IR integrated photonics to form the basis of compact, scalable platforms for point-of-care TDM.

physics.optics↗

arXiv2023

Optical switching beyond a million cycles of low-loss phase change material Sb$_2$Se$_3$

The development of the next generation of optical phase change technologies for integrated photonic and free-space platforms relies on the availability of materials that can be switched repeatedly over large volumes and with low optical losses. In recent years, the antimony-based chalcogenide phase-change material Sb$_2$Se$_3$ has been identified as particularly promising for a number of applications owing to good optical transparency in the near-infrared part of the spectrum and a high refractive index close to silicon. The crystallization temperature of Sb$_2$Se$_3$ of around 460 K allows switching to be achieved at moderate energies using optical or electrical control signals while providing sufficient data retention time for non-volatile storage. Here, we investigate the parameter space for optical switching of films of Sb$_2$Se$_3$ for a range of film thicknesses relevant for optical applications. By identifying optimal switching conditions, we demonstrate endurance of up to 10$^7$ cycles at reversible switching rates of 20 kHz. Our work demonstrates that the combination of intrinsic film parameters with pumping conditions is particularly critical for achieving high endurance in optical phase change applications.

physics.optics↗

arXiv2022

Spurious poles in a finite volume

Using effective-range expansion for the two-body amplitudes may generate spurious sub-threshold poles outside of the convergence range of the expansion. In the infinite volume, the emergence of such poles leads to the inconsistencies in the three-body equations, e.g., to the breakdown of unitarity. We investigate the effect of the spurious poles on the three-body quantization condition in a finite volume and show that it leads to a peculiar dependence of the energy levels on the box size $L$. Furthermore, within a simple model, it is demonstrated that the procedure for the removal of these poles, which was recently proposed in Ref.[1] in the infinite volume, can be adapted to the finite-volume calculations. The structure of the exact energy levels is reproduced with an accuracy that systematically improves order by order in the EFT expansion.

hep-lat↗

arXiv2022

Scalable, Highly Crystalline, 2D Semiconductor Atomic Layer Deposition Process for High Performance Electronic Applications

This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area performance uniformity and tunability. Like graphene, 2D Transition Metal Dichalcogenides (TMDCs) are prone to upscaling challenges limiting their commercial uptake. They are challenging to grow uniformly on large substrates and to transfer on alternative substrates while they often lack in large area electrical performance uniformity. The scalable ALD process of this work enables uniform growth of 2D TMDCs on large area with independent control of layer thickness, stoichiometry and crystallinity while allowing chemical free transfers to application substrates. Field effect transistors (FETs) fabricated on flexible substrates using the process present a field effect mobility of up to 55 cm^2/Vs, subthreshold slope down to 80 mV/dec and on/off ratios of 10^7. Additionally, non-volatile memory transistors using ferroelectric FETs (FeFETs) operating at +-5 V with on/off ratio of 107 and a memory window of 3.25 V are demonstrated. These FeFETs demonstrate state-of-the-art performance with multiple state switching, suitable for one-transistor non-volatile memory and for synaptic transistors revealing the applicability of the process to flexible neuromorphic applications.

physics.app-ph↗

arXiv2020

Deep learning enabled design of complex transmission matrices for universal optical components

Recent breakthroughs in photonics-based quantum, neuromorphic and analogue processing have pointed out the need for new schemes for fully programmable nanophotonic devices. Universal optical elements based on interferometer meshes are underpinning many of these new technologies, however this is achieved at the cost of an overall footprint that is very large compared to the limited chip real estate, restricting the scalability of this approach. Here, we consider an ultracompact platform for low-loss programmable elements using the complex transmission matrix of a multi-port multimode waveguide. We propose a deep learning inverse network approach to design arbitrary transmission matrices using patterns of weakly scattering perturbations. The demonstrated technique allows control over both the intensity and phase in a multiport device at a four orders reduced device footprint compared to conventional technologies, thus opening the door for large-scale integrated universal networks.

physics.optics↗