arXiv subjects

Marta Bilska

Publications and source records attributed to Marta Bilska.

4 recordsLinked to original sources

arXiv2026

Ultralow-Tensile Strain Enables Exciton Funneling and Energy Transfer to Boost MoSe2 Photoluminescence Quantum Yield

Strain engineering is a powerful route for controlling the exciton dynamics in van der Waals (vdW) heterostructures (HSs). The interlayer energy transfer (ET) process is another key factor in controlling the photocarrier relaxation pathways in vdW HSs. In this work, we combine these two processes to achieve an 8-fold enhancement to the relative photoluminescence (PL) quantum yield (QY) in a HS formed from monolayers of ReS2 and MoSe2, separated by a thin hBN interlayer, placed onto an hBN bubble. We achieve this enhancement by applying only 0.1% biaxial tensile strain, which results in efficient exciton funneling and an increased transition dipole moment. Our experimental data are supported by first-principles density-functional theory and coherent transfer-matrix method calculations, ruling out optical interference as the dominant origin of the enhancement. This work provides an innovative route for enhancing the PL QY of vdW materials via interplay between the tensile strain and the ET process.

cond-mat.mtrl-sci↗

arXiv2025

$WSe_2$ Monolayers Grown by Molecular Beam Epitaxy on hBN

A three-step process was developed for growing high-quality, optically uniform WSe2 monolayers by molecular beam epitaxy (MBE) with advantage of using hexagonal boron nitride (hBN). The process was optimized to maximize the efficiency of photoluminescence and promote formation of hexagonal WSe2 domains. Atomic force microscopy (AFM) was employed to estimate the dispersion of WSe2 hexagonal domains orientation. Monolayer character of the film was identified using optical methods and verified with high-resolution transmission electron microscopy (TEM) cross-section. Temperature-and-magnetic-field-dependent studies revealed the behaviour of exciton complexes to be analogical to that of exfoliated counterparts. Direct growth on hBN combined with uniform optical response proves this WSe2 superior to mechanically exfoliated WSe2 in terms of convenience of use and reproducibility. Provided results establish a significant progress in optical quality of epitaxially grown transition metal dichalcogenides (TMDs) monolayers and fabrication of large-scale functional devices.

cond-mat.mtrl-sci↗

arXiv2024

Revealing Polytypism in 2D Boron Nitride with UV Photoluminescence

Boron nitride exhibits diverse crystal structures, predominantly a layered arrangement with strong intraplanar covalent bonds and weak interplanar van der Waals bonds. While commonly referred to as hexagonal BN (hBN), the sp$^2$-bonded BN atomic planes can also arrange in other configurations like Bernal (bBN) or rhombohedral (rBN) stacking orders. Variations in the orientation and translation of successive atomic layers lead to changes in crystal symmetry, potentially resulting in piezoelectric, pyroelectric or ferroelectric effects. However, distinguishing between different polytypes using conventional methods like X-ray diffraction or Raman spectroscopy presents a significant challenge. In this work, we demonstrate that the optical response of the 4.1 eV defect can serve as an indicator of the polytype. To this end, we study BN samples grown by metalorganic vapor phase epitaxy (MOVPE), which contain different polytypes. The identification of the polytypes was achieved by X-ray diffraction and transmission electron microscopy. Photoluminescence and cathodoluminescence measurements with a high spatial resolution allowed for the deconvolution of the signal into two components from which we can extract a zero-phonon line (ZPL) at 4.096 eV (302.6 nm) for hBN and 4.143 eV (299.2 nm) for rBN. We performed calculations that enable us to identify the defect as a carbon dimer CBCN (C2) and show that the ZPL shift reflects differences in the crystal environment for different polytypes. Furthermore, we demonstrate that different polytypic composition ratios of hBN and rBN can be achieved by MOVPE, which could pave the way for future applications in large-area van der Waals heterostructures.

cond-mat.mtrl-sci↗

arXiv2022

Bi Incorporation and segregation in the MBE-grown GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires

Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(111)B substrates with Au-droplet assisted mode. Bi-doped shells are grown at low temperature (300 °C) with a close to stoichiometric Ga/As flux ratio. At low Bi fluxes, the Ga(As,Bi) shells are smooth, with Bi completely incorporated into the shells. Higher Bi fluxes (Bi/As flux ratio ~ 4%) led to partial segregation of Bi as droplets on the nanowires sidewalls, preferentially located at the nanowire segments with wurtzite structure. We demonstrate that such Bi droplets on the sidewalls act as catalysts for the growth of branches perpendicular to the GaAs trunks. Due to the tunability between zinc-blende and wurtzite polytypes by changing the nanowire growth conditions, this effect enables fabrication of branched nanowire architectures with branches generated from selected (wurtzite) nanowire segments.

cond-mat.mtrl-sci↗