arXiv subjects

Maria Spies

Publications and source records attributed to Maria Spies.

7 recordsLinked to original sources

arXiv2023

Superconducting Spintronic Heat Engine

Heat engines are key devices that convert thermal energy into usable energy. Strong thermoelectricity, at the basis of electrical heat engines, is present in superconducting spin tunnel barriers at cryogenic temperatures where conventional semiconducting or metallic technologies cease to work. Here we realize a superconducting spintronic heat engine consisting of a ferromagnetic insulator/superconductor/insulator/ferromagnet tunnel junction (EuS/Al/AlO$_x$/Co). The efficiency of the engine is quantified for bath temperatures ranging from 25 mK up to 800 mK, and at different load resistances. Moreover, we show that the sign of the generated thermoelectric voltage can be inverted according to the parallel or anti-parallel orientation of the two ferromagnetic layers, EuS and Co. This realizes a thermoelectric spin valve controlling the sign and strength of the Seebeck coefficient, thereby implementing a thermoelectric memory cell. We propose a theoretical model that allows describing the experimental data and predicts the engine efficiency for different device parameters.

cond-mat.mes-hall↗

arXiv2023

Superconductor-ferromagnet hybrids for non-reciprocal electronics and detectors

We review the use of hybrid thin films composed of superconductors and ferromagnets for creating non-reciprocal electronic components and self-biased detectors of electromagnetic radiation. We begin by introducing the theory behind these effects, as well as discussing various potential materials that can be used in the fabrication of these components. We then proceed with a detailed discussion on the fabrication and characterization of Al/EuS/Cu and EuS/Al/Co-based detectors, along with their noise analysis. Additionally, we suggest some approaches for multiplexing such self-biased detectors.

cond-mat.supr-con↗

arXiv2020

Correlated electro-optical and structural study of electrically tunable nanowire quantum dot emitters

Quantum dots inserted in semiconducting nanowires are a promising platform for the fabrication of single photon devices. However, it is difficult to fully comprehend the electro-optical behaviour of such quantum objects without correlated studies of the structural and optical properties on the same nanowire. In this work, we study the spectral tunability of the emission of a single quantum dot in a GaN nanowire by applying external bias. The nanowires are dispersed and contacted on electron beam transparent Si3N4 membranes, so that transmission electron microscopy observations, photocurrent and micro-photoluminescence measurements under bias can be performed on the same specimen. The emission from a single dot blue or red shifts when the external electric field compensates or enhances the internal electric field generated by the spontaneous and piezoelectric polarization. A detailed study of two nanowire specimens emitting at 327.5 nm and 307.5 nm shows spectral shifts at rates of 20 and 12 meV/V, respectively. Theoretical calculations facilitated by the modelling of the

cond-mat.mes-hall↗

arXiv2020

Correlated and in-situ electrical transmission electron microscopy studies and related membrane fabrication

Understanding the interplay between the structure, composition and opto-electronic properties of semiconductor nano-objects requires combining transmission electron microscopy (TEM) based techniques with electrical and optical measurements on the very same specimen. Recent developments in TEM technologies allow not only the identification and in-situ electrical characterization of a particular object, but also the direct visualization of its modification in-situ by techniques such as Joule heating. Over the past years, we have carried out a number of studies in these fields that are reviewed in this contribution. In particular, we discuss here i) correlated studies where the same unique object is characterized electro-optically and by TEM, ii) in-situ Joule heating studies where a solid-state metal-semiconductor reaction is monitored in the TEM, and iii) in-situ biasing studies to better understand the electrical properties of contacted single nanowires. In addition, we provide detailed fabrication steps for the silicon nitride membranes crucial to these correlated and in-situ measurements.

physics.app-ph↗

arXiv2019

Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors

Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their photoresponse scales sublinearly with the optical power. Here, we present a study of single-nanowire photodetectors displaying a linear response to ultraviolet illumination. Their structure consists of a GaN nanowire incorporating an AlN/GaN/AlN heterostructure, which generates an internal electric field. The activity of the heterostructure is confirmed by the rectifying behavior of the current-voltage characteristics in the dark, as well as by the asymmetry of the photoresponse in magnitude and linearity. Under reverse bias (negative bias on the GaN cap segment), the detectors behave linearly with the impinging optical power when the nanowire diameter is below a certain threshold ($\approx$ 80 nm), which corresponds to the total depletion of the nanowire stem due to the Fermi level pinning at the sidewalls. In the case of nanowires that are only partially depleted, their nonlinearity is explained by a nonlinear variation of the diameter of their central conducting channel under illumination.

cond-mat.mes-hall↗

arXiv2019

Nanowire photodetectors based on wurtzite semiconductor heterostructures

Using nanowires for photodetection constitutes an opportunity to enhance the absorption efficiency while reducing the electrical cross-section of the device. They present interesting features like compatibility with silicon substrates, which offers the possibility of integrating detector and readout circuitry, and facilitates their transfer to flexible substrates. Within a nanowire, it is possible to implement axial and radial (core-shell) heterostructures. These two types can be combined to obtain three-dimensional carrier confinement (dot-in-a-wire). The incorporation of heterostructures in nanowire photodetectors opens interesting opportunities of application and performance improvement. Heterojunctions or type-II heterostructures favor the separation of the photogenerated electrons and holes, and the implementation of quantum dots in a nanowire can be applied to the development of quantum photodetectors. This paper provides a general review of latest progresses in nanowire photodetectors, including single nanowires and heterostructured nanowires.

cond-mat.mtrl-sci↗

arXiv2017

Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors

We present a study of GaN single-nanowire ultraviolet photodetectors with an embedded GaN/AlN superlattice. The heterostructure dimensions and doping profile were designed in such a way that the application of positive or negative bias leads to an enhancement of the collection of photogenerated carriers from the GaN/AlN superlattice or from the GaN base, respectively, as confirmed by electron beam-induced current measurements. The devices display enhanced response in the ultraviolet A ($\approx$ 330-360 nm) / B ($\approx$ 280-330 nm) spectral windows under positive/negative bias. The result is explained by correlation of the photocurrent measurements with scanning transmission electron microscopy observations of the same single nanowire, and semi-classical simulations of the strain and band structure in one and three dimensions.

physics.app-ph↗