arXiv subjects

Manfred Martin

Publications and source records attributed to Manfred Martin.

4 recordsLinked to original sources

arXiv2026

The Diffusion Kinetics of Ba Cations in Perovskite BaTiO$_3$: A Combined Tracer Diffusion and Metadynamics Study

Tracer diffusion experiments and metadynamics (MtD) simulations were used to study the diffusion of Ba cations in the cubic phase of the perovskite oxide BaTiO$_3$. $^{130}$BaTiO$_3$ thin films were used as diffusion sources to introduce barium tracer diffusion profiles into single-crystal samples at temperatures $1348 \leq T/\mathrm{K} \leq 1498$. The $^{130}$Ba profiles were determined by time-of-flight secondary ion mass spectrometry, and then analysed to yield Ba tracer diffusion coefficients ($D_\mathrm{Ba}^\ast$). MtD simulations were performed in order to obtain barium-vacancy diffusion coefficients ($D_\mathrm{v_{Ba}}$) for selected vacancy mechanisms as a function of temperature. $D_\mathrm{v_{Ba}}$ is predicted to be increased significantly by an adjacent oxygen vacancy, and even more, by an adjacent titanium vacancy. From the combined consideration of $D_\mathrm{Ba}^\ast$ and $D_\mathrm{v_{Ba}}$, we conclude that Ba diffusion in these samples occurred most probably by the migration of defect associates, and not by the migration of isolated barium vacancies. More generally, our results draw attention to the dangers of relying solely on activation enthalpies to interpret diffusion data.

cond-mat.mtrl-sci↗

arXiv2020

Offcut-related step-flow and growth rate enhancement during (100) $\beta$-Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)

In this work we investigate the growth of $\beta$-Ga2O3 homoepitaxial layers on top of (100) oriented substrates via indium-assisted metal exchange catalyzed molecular beam epitaxy (MEXCAT-MBE) which have exhibited prohibitively low growth rates by non-catalyzed MBE in the past. We demonstrate that the proper tuning of the MEXCAT growth parameters and the choice of a proper substrate offcut allow for the deposition of thin films with high structural quality via step-flow growth mechanism at relatively high growth rates for $\beta$-Ga2O3 homoepitaxy (i.e., around 1.5 nm/min, $\approx$45% incorporation of the incoming Ga flux), making MBE growth on this orientation feasible. Moreover, through the employment of the investigated four different (100) substrate offcuts along the [00-1] direction (i.e., 0$^\circ$, 2$^\circ$, 4$^\circ$, 6$^\circ$) we give experimental evidence on the fundamental role of the (-201) step edges as nucleation sites for growth of (100)-oriented Ga2O3 films by MBE.

cond-mat.mtrl-sci↗

arXiv2020

Isotopic study of Raman active phonon modes in $\beta$-Ga$_{2}$O$_{3}$

Holding promising applications in power electronics, the wide band gap material gallium oxide has emerged as a vital alternative to materials like GaN and SiC. The detailed study of phonon modes in $\beta$-Ga$_{2}$O$_{3}$ provides insights into fundamental material properties such as crystal structure and orientation and can contribute to the identification of dopants and point defects. We investigate the Raman active phonon modes of $\beta$-Ga$_{2}$O$_{3}$ in two different oxygen isotope compositions ($^{16}$O,$^{18}$O) by experiment and theory: By carrying out polarized micro-Raman spectroscopy measurements on the (010) and ($\bar{2}$01) planes, we determine the frequencies of all 15 Raman active phonons for both isotopologues. The measured frequencies are compared with the results of density functional perturbation theory (DFPT) calculations. In both cases, we observe a shift of Raman frequencies towards lower energies upon substitution of $^{16}$O with $^{18}$O. By quantifying the relative frequency shifts of the individual Raman modes, we identify the atomistic origin of all modes (Ga-Ga, Ga-O or O-O) and present the first experimental confirmation of the theoretically calculated energy contributions of O lattice sites to Raman modes. We find that oxygen substitution on the O$_{\mathrm{II}}$ site leads to an elevated relative frequency shift compared to O$_{\mathrm{I}}$ and O$_{\mathrm{III}}$ sites. This study presents a blueprint for the future identification of different point defects in Ga$_{2}$O$_{3}$ by Raman spectroscopy.

cond-mat.mtrl-sci↗

arXiv2017

Oxides in an oxygen potential gradient: coupled morphological stability of the multiple phase boundaries

In materials that are exposed to thermodynamic potential gradients, i.e., gradients of chemical potentials, electrical potential, temperature, or pressure, transport processes of the mobile components occur. These transport processes and the coupling between different processes are not only of fundamental interest, but are also the origin of several degradation processes, such as kinetic unmixing and decomposition. In addition, changes in the morphology of the material surfaces and interfaces may appear. In this paper, a comprehensive formal treatment of the coupled morphological stability of multiple phase boundaries will be given for oxides that are exposed to an oxygen potential gradient.

cond-mat.mtrl-sci↗