arXiv subjects

Manasa Kaniselvan

Publications and source records attributed to Manasa Kaniselvan.

14 recordsLinked to original sources

arXiv2026

Ab initio Modeling of MoS2/Oxide Device Interfaces with Machine Learned Electronic Structures

We introduce a new ab initio approach to simulate semiconductor devices that integrates scalable machine-learned (ML) electronic structure models with an advanced quantum transport (QT) solver. The developed framework enables 10,000X speedups over density functional theory to produce the Hamiltonian matrix of devices made of >20,000 atoms, while offering high prediction accuracy. We use its unique features to investigate MoS2/oxide samples and single-layer MoS2 field-effect transistors, where the surrounding oxide layers, here, HfO2 or Al2O3, are explicitly included into the QT domain. In particular, we reveal that the presence of undercoordinated metal atoms (Hf or Al) close to the semiconductor-oxide interface significantly affects the magnitude of the electronic current and its propagation through MoS2.

cond-mat.mtrl-sci↗

arXiv2026

MALOQ: Massively Accelerated Learning of Operators for Quantum Transport

Machine-learned (ML) operator models can be trained to predict density functional theory (DFT) Hamiltonian/density matrices at significantly reduced computational cost, thus extending electronic-structure calculations to previously unfeasible scales. Here, we introduce MALOQ (Massively Accelerated Learning of Operators for Quantum Transport), an application built to train on and predict electronic-structure matrices for systems made of few to 100k atoms, described by large basis sets, and covering a wide range of atomic elements. Based on a state-of-the-art, SO(2)-equivariant backbone architecture, MALOQ provides (i) custom data-processing kernels to handle high-rank Hamiltonian matrix data and (ii) a scalable edge-wise distribution of atomic graph(s). Trained on the largest molecular Hamiltonian datasets available today, it reduces time-per-epoch by over 30% compared to a molecule-wise-distributed framework, and enables inference on material graphs of arbitrary size. We demonstrate scalable training and inference for 3,000-12,000 atoms on the Alps supercomputer, up to 192 GPUs and 256 GPUs, respectively.

cs.LG↗

arXiv2026

Acceleration of Atomistic NEGF: Algorithms, Parallelization, and Machine Learning

The Non-equilibrium Green's function (NEGF) formalism is a particularly powerful method to simulate the quantum transport properties of nanoscale devices such as transistors, photo-diodes, or memory cells, in the ballistic limit of transport or in the presence of various scattering sources such as electronphonon, electron-photon, or even electron-electron interactions. The inclusion of all these mechanisms has been first demonstrated in small systems, composed of a few atoms, before being scaled up to larger structures made of thousands of atoms. Also, the accuracy of the models has kept improving, from empirical to fully ab-initio ones, e.g., density functional theory (DFT). This paper summarizes key (algorithmic) achievements that have allowed us to bring DFT+NEGF simulations closer to the dimensions and functionality of realistic systems. The possibility of leveraging graph neural networks and machine learning to speed up ab-initio device simulations is discussed as well.

cond-mat.mtrl-sci↗

arXiv2026

Machine-Learned Hamiltonians for Quantum Transport Simulation of Valence Change Memories

The construction of the Hamiltonian matrix \textbf{H} is an essential, yet computationally expensive step in \textit{ab-initio} device simulations based on density-functional theory (DFT). In homogeneous structures, the fact that a unit cell repeats itself along at least one direction can be leveraged to minimize the number of atoms considered and the calculation time. However, such an approach does not lend itself to amorphous or defective materials for which no periodicity exists. In these cases, (much) larger domains containing thousands of atoms might be needed to accurately describe the physics at play, pushing DFT tools to their limit. Here we address this issue by learning and directly predicting the Hamiltonian matrix of large structures through equivariant graph neural networks and so-called augmented partitioning training. We demonstrate the strength of our approach by modeling valence change memory (VCM) cells, achieving a Mean Absolute Error (MAE) of 3.39 to 3.58 meV, as compared to DFT, when predicting the Hamiltonian matrix entries of systems made of $\sim$5,000 atoms. We then replace the DFT-computed Hamiltonian of these VCMs with the predicted one to compute their energy-resolved transmission function with a quantum transport tool. A qualitatively good agreement between both sets of curves is obtained. Our work provides a path forward to overcome the memory and computational limits of DFT, thus enabling the study of large-scale devices beyond current \textit{ab-initio} capabilities

cond-mat.dis-nn↗

arXiv2025

Enhancing Diffusion-Based Sampling with Molecular Collective Variables

Diffusion-based samplers learn to sample complex, high-dimensional distributions using energies or log densities alone, without training data. Yet, they remain impractical for molecular sampling because they are often slower than molecular dynamics and miss thermodynamically relevant modes. Inspired by enhanced sampling, we encourage exploration by introducing a sequential bias along bespoke, information-rich, low-dimensional projections of atomic coordinates known as collective variables (CVs). We introduce a repulsive potential centered on the CVs from recent samples, which pushes future samples towards novel CV regions and effectively increases the temperature in the projected space. Our resulting method improves efficiency, mode discovery, enables the estimation of free energy differences, and retains independent sampling from the approximate Boltzmann distribution via reweighting by the bias. On standard peptide conformational sampling benchmarks, the method recovers diverse conformational states and accurate free energy profiles. We are the first to demonstrate reactive sampling using a diffusion-based sampler, capturing bond breaking and formation with universal interatomic potentials at near-first-principles accuracy. The approach resolves reactive energy landscapes at a fraction of the wall-clock time of standard sampling methods, advancing diffusion-based sampling towards practical use in molecular sciences.

physics.chem-ph↗

arXiv2025

Learning from the electronic structure of molecules across the periodic table

Machine-Learned Interatomic Potentials (MLIPs) require vast amounts of atomic structure data to learn forces and energies, and their performance continues to improve with training set size. Meanwhile, the even greater quantities of accompanying data in the Hamiltonian matrix H behind these datasets has so far gone unused for this purpose. Here, we provide a recipe for integrating the orbital interaction data within H towards training pipelines for atomic-level properties. We first introduce HELM ("Hamiltonian-trained Electronic-structure Learning for Molecules"), a state-of-the-art Hamiltonian prediction model which bridges the gap between Hamiltonian prediction and universal MLIPs by scaling to H of structures with 100+ atoms, high elemental diversity, and large basis sets including diffuse functions. To accompany HELM, we release a curated Hamiltonian matrix dataset, 'OMol_CSH_58k', with unprecedented elemental diversity (58 elements), molecular size (up to 150 atoms), and basis set (def2-TZVPD). Finally, we introduce 'Hamiltonian pretraining' as a method to extract meaningful descriptors of atomic environments even from a limited number atomic structures, and repurpose this shared embedding space to improve performance on energy-prediction in low-data regimes. Our results highlight the use of electronic interactions as a rich and transferable data source for representing chemical space.

physics.chem-ph↗

arXiv2025

Reinforcement Learning Improves Traversal of Parametric Knowledge in LLMs

Reinforcement learning (RL) is often credited with improving reasoning at the expense of factual knowledge. We instead find that reasoning models outperform their instruction-tuned versions on factual recall by accessing existing parametric knowledge more effectively. Across five model families, structured prompting, which explicitly guides models through hierarchical traversal, recovers most of this gap, suggesting that much of the missing knowledge is latent rather than absent. Controlled RL experiments further support this: training on unseen, non-extractable facts improves recall of held-out, frequent but previously inaccessible facts, ruling out simple data exposure. Decomposing the training objective further attributes this gain to iterated on-policy exploration. The same mechanism appears behaviorally and internally: the reasoning advantage grows with retrieval depth, while layerwise analysis finds similar factual representations but divergent query representations. Distilled models, in contrast, often imitate self-correction without acquiring the exploration needed for navigation. Together, these findings suggest that improving factual recall in LLMs depends not only on expanding what models know but also on teaching them to navigate it, motivating future post-training methods that optimize traversal.

cs.CL↗

arXiv2025

Distributed Equivariant Graph Neural Networks for Large-Scale Electronic Structure Prediction

Equivariant Graph Neural Networks (eGNNs) trained on density-functional theory (DFT) data can potentially perform electronic structure prediction at unprecedented scales, enabling investigation of the electronic properties of materials with extended defects, interfaces, or exhibiting disordered phases. However, as interactions between atomic orbitals typically extend over 10+ angstroms, the graph representations required for this task tend to be densely connected, and the memory requirements to perform training and inference on these large structures can exceed the limits of modern GPUs. Here we present a distributed eGNN implementation which leverages direct GPU communication and introduce a partitioning strategy of the input graph to reduce the number of embedding exchanges between GPUs. Our implementation shows strong scaling up to 128 GPUs, and weak scaling up to 512 GPUs with 87% parallel efficiency for structures with 3,000 to 190,000 atoms on the Alps supercomputer.

cs.LG↗

arXiv2025

Termination-Dependent Resistive Switching in SrTiO$_3$ Valence Change Memory Cells

Valence change memory (VCM) cells based on SrTiO$_3$ (STO), a perovskite oxide, are a promising type of emerging memory device. While the operational principle of most VCM cells relies on the growth and dissolution of one or multiple conductive filaments, those based on STO are known to exhibit a distinctive, 'interface-type' switching, which is associated with the modulation of the Schottky barrier at their active electrode. Still, a detailed picture of the processes that lead to interface-type switching is not available. In this work, we use a fully atomistic and ab initio model to study the resistive switching of a Pt-STO-Ti stack. We identify that the termination of the crystalline STO plays a decisive role in the switching mechanism, depending on the relative band alignment between the material and the Pt electrode. In particular, we show that the accumulation of oxygen vacancies at the Pt side can be at the origin of resistive switching in TiO$_2$-terminated devices by lowering the conduction band minimum of the STO layer, thus facilitating transmission through the Schottky barrier. Moreover, we investigate the possibility of filamentary switching in STO and reveal that it is most likely to occur at the Pt electrode of the SrO-terminated cells.

cond-mat.mtrl-sci↗

arXiv2025

Learning the Electronic Hamiltonian of Large Atomic Structures

Graph neural networks (GNNs) have shown promise in learning the ground-state electronic properties of materials, subverting ab initio density functional theory (DFT) calculations when the underlying lattices can be represented as small and/or repeatable unit cells (i.e., molecules and periodic crystals). Realistic systems are, however, non-ideal and generally characterized by higher structural complexity. As such, they require large (10+ Angstroms) unit cells and thousands of atoms to be accurately described. At these scales, DFT becomes computationally prohibitive, making GNNs especially attractive. In this work, we present a strictly local equivariant GNN capable of learning the electronic Hamiltonian (H) of realistically extended materials. It incorporates an augmented partitioning approach that enables training on arbitrarily large structures while preserving local atomic environments beyond boundaries. We demonstrate its capabilities by predicting the electronic Hamiltonian of various systems with up to 3,000 nodes (atoms), 500,000+ edges, ~28 million orbital interactions (nonzero entries of H), and $\leq$0.53% error in the eigenvalue spectra. Our work expands the applicability of current electronic property prediction methods to some of the most challenging cases encountered in computational materials science, namely systems with disorder, interfaces, and defects.

cond-mat.mtrl-sci↗

arXiv2025

Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering

A critical issue affecting filamentary resistive random access memory (RRAM) cells is the requirement of high voltages during electroforming. Reducing the magnitude of these voltages is of significant interest, as it ensures compatibility with Complementary Metal-Oxide-Semiconductor (CMOS) technologies. Previous studies have identified that changing the initial stoichiometry of the switching layer and/or implementing thermal engineering approaches has an influence over the electroforming voltage magnitude, but the exact mechanisms remain unclear. Here, we develop an understanding of how these mechanisms work within a standard a-HfO$_x$/Ti RRAM stack through combining atomistic driven-Kinetic Monte Carlo (d-KMC) simulations with experimental data. By performing device-scale simulations at atomistic resolution, we can precisely model the movements of point defects under applied biases in structurally inhomogeneous materials, which allows us to not only capture finite-size effects but also to understand how conductive filaments grow under different electroforming conditions. Doing atomistic simulations at the device-level also enables us to link simulations of the mechanisms behind conductive filament formation with trends in experimental data with the same material stack. We identify a transition from primarily vertical to lateral ion movement dominating the filamentary growth process in sub-stoichiometric oxides, and differentiate the influence of global and local heating on the morphology of the formed filaments. These different filamentary structures have implications for the dynamic range exhibited by formed devices in subsequent SET/RESET operations. Overall, our results unify the complex ion dynamics in technologically relevant HfO$_x$/Ti-based stacks, and provide guidelines that can be leveraged when fabricating devices.

cond-mat.mtrl-sci↗

arXiv2024

Single Neuromorphic Memristor closely Emulates Multiple Synaptic Mechanisms for Energy Efficient Neural Networks

Biological neural networks do not only include long-term memory and weight multiplication capabilities, as commonly assumed in artificial neural networks, but also more complex functions such as short-term memory, short-term plasticity, and meta-plasticity - all collocated within each synapse. Here, we demonstrate memristive nano-devices based on SrTiO3 that inherently emulate all these synaptic functions. These memristors operate in a non-filamentary, low conductance regime, which enables stable and energy efficient operation. They can act as multi-functional hardware synapses in a class of bio-inspired deep neural networks (DNN) that make use of both long- and short-term synaptic dynamics and are capable of meta-learning or "learning-to-learn". The resulting bio-inspired DNN is then trained to play the video game Atari Pong, a complex reinforcement learning task in a dynamic environment. Our analysis shows that the energy consumption of the DNN with multi-functional memristive synapses decreases by about two orders of magnitude as compared to a pure GPU implementation. Based on this finding, we infer that memristive devices with a better emulation of the synaptic functionalities do not only broaden the applicability of neuromorphic computing, but could also improve the performance and energy costs of certain artificial intelligence applications.

cs.NE↗

arXiv2022

An Atomistic Model of Field-Induced Resistive Switching in Valence Change Memory

In Valence Change Memory (VCM) cells, the conductance of an insulating switching layer is reversibly modulated by creating and redistributing point defects under an external field. Accurate simulations of the switching dynamics of these devices can be difficult due to their typically disordered atomic structures and inhomogeneous arrangements of defects. To address this, we introduce an atomistic framework for modelling VCM cells. It combines a stochastic Kinetic Monte Carlo approach for atomic rearrangement with a quantum transport scheme, both parameterized at the ab-initio level by using inputs from Density Functional Theory (DFT). Each of these steps operates directly on the underlying atomic structure. The model thus directly relates the energy landscape and electronic structure of the device to its switching characteristics. We apply this model to simulate non-volatile switching between high- and low-resistance states in an TiN/HfO2/Ti/TiN stack, and analyze both the kinetics and stochasticity of the conductance transitions. We also resolve the atomic nature of current flow resulting from the valence change mechanism, finding that conductive paths are formed between the undercoordinated Hf atoms neighboring oxygen vacancies. The model developed here can be applied to different material systems to evaluate their resistive switching potential, both for use as conventional memory cells and as neuromorphic computing primitives.

cond-mat.dis-nn↗

arXiv2022

An Atomistic Modelling Framework for Valence Change Memory Cells

We present a framework dedicated to modelling the resistive switching operation of Valence Change Memory (VCM) cells. The method combines an atomistic description of the device structure, a Kinetic Monte Carlo (KMC) model for the creation and diffusion of oxygen vacancies in the central oxide under an external field, and an ab-initio quantum transport method to calculate electrical current and conductance. As such, it reproduces a realistically stochastic device operation and its impact on the resulting conductance. We demonstrate this framework by simulating a switching cycle for a TiN/HfO$_2$/TiN VCM cell, and see a clear current hysteresis between high/low resistance states, with a conductance ratio of one order of magnitude. Additionally, we observe that the changes in conductance originate from the creation and recombination of vacancies near the active electrode, effectively modulating a tunnelling gap for the current. This framework can be used to further investigate the mechanisms behind resistive switching at an atomistic scale and optimize VCM material stacks and geometries.

cond-mat.mtrl-sci↗