Collective sliding relaxor ferroelectricity across thousand-layer van der Waals superstructures
Relaxor ferroelectrics are among the most important electromechanical materials owing to their exceptionally large electrostrictive responses. However, conventional relaxor behavior is generally associated with chemical complexity and structural disorder, where local compositional fluctuations generate polar nanoregions, making the microscopic origin of this behavior difficult to control and engineer. Here we report sliding relaxor ferroelectricity (S-RFE), a previously unknown relaxor state in which engineered stacking-phase heterogeneity enables cooperative interlayer sliding to generate collective relaxor behavior. Through stacking-phase engineering in rhombohedral boron nitride, we create sliding domains that act as structural analogues of polar nanoregions and cooperatively align under an electric field through interlayer sliding. This collective state produces reversible electromechanical deformation of up to approximately $-1.6\%$ with negligible hysteresis in approximately 300-nm-thick crystals, corresponding to approximately 1000 atomic layers. The resulting electrostriction coefficient ($Q_{33}$ of approximately $1200\,\mathrm{m}^{4}\mathrm{C}^{-2}$) exceeds those of most crystalline electrostrictors by orders of magnitude. Unlike conventional relaxors, whose electromechanical response is often suppressed by dipolar freezing at low temperatures, S-RFE remains active down to 1.6 K and maintains giant electromechanical functionality. Our results establish sliding relaxor ferroelectricity as a new route to relaxor behavior and reveal how atomic-scale interlayer motion can be amplified into collective mesoscale functionality across approximately one thousand layers, providing a materials-by-design platform for electromechanical, photonic, and quantum technologies based on van der Waals materials.