arXiv subjects

M. Usman

Publications and source records attributed to M. Usman.

10 recordsLinked to original sources

arXiv2023

Global quantum discord and von Neumann entropy in multipartite two-level atomic systems

We have computed the global quantum discord and von Neumann entropy of multipartite two-level atomic systems interacting with a single-mode Fock field. We use Tavis-Cumming model. We have explored how quantum correlations and quantum entanglement evolve with time in such systems. The quantum system is prepared initially in a mixed state and different parameters are varied to see how they affect the information processing in the system. The dynamical character of the global quantum discord and von Neumann entropy show an interplay between classical and non-classical correlations. Photons in this model play an important role to assist the global quantum discord and von Neumann entropy and we observed that the effects of the field on the global quantum discord and von Neumann entropy reside in the time evolution of the system indicating that both atom and field states have become entangled. The global quantum discord is assisted in a non-linear fashion with the number of photons in the system. The global quantum discord and von Neumann entropy show linear behavior with each other in the dynamics of the system. The effects of intrinsic decoherence on the dynamics of the global quantum discord and von Neumann entropy are also studied. We have extrapolated the results for a large photon number on the system. We have studied the effect of the change in the size of the system on the maximum value of global quantum discord and von Neumann entropy and we have estimated the scaling coefficients for this behavior.

quant-ph↗

arXiv2021

Valley population of donor states in highly strained silicon

Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valley degeneracy of the six conduction band minima, and by extension the valley states of electrons bound to phosphorus donors. Here, single phosphorus atoms are embedded in an engineered thin layer of silicon strained to 0.8% and their wave function imaged using spatially resolved spectroscopy. A prevalence of the out-of-plane valleys is confirmed from the real-space images, and a combination of theoretical modelling tools is used to assess how this valley repopulation effect can yield isotropic exchange and tunnel interactions in the $xy$-plane relevant for atomically precise donor qubit devices. Finally, the residual presence of in-plane valleys is evidenced by a Fourier analysis of both experimental and theoretical images, and atomistic calculations highlight the importance of higher orbital excited states to obtain a precise relationship between valley population and strain. Controlling the valley degree of freedom in engineered strained epilayers provides a new competitive asset for the development of donor-based quantum technologies in silicon.

cond-mat.mes-hall↗

arXiv2021

Valley interference and spin exchange at the atomic scale in silicon

Tunneling is a fundamental quantum process with no classical equivalent, which can compete with Coulomb interactions to give rise to complex phenomena. Phosphorus dopants in silicon can be placed with atomic precision to address the different regimes arising from this competition. However, they exploit wavefunctions relying on crystal band symmetries, which tunneling interactions are inherently sensitive to. Here we directly image lattice-aperiodic valley interference between coupled atoms in silicon using scanning tunneling microscopy. Our atomistic analysis unveils the role of envelope anisotropy, valley interference and dopant placement on the Heisenberg spin exchange interaction. We find that the exchange can become immune to valley interference by engineering in-plane dopant placement along specific crystallographic directions. A vacuum-like behaviour is recovered, where the exchange is maximised to the overlap between the donor orbitals, and pair-to-pair variations limited to a factor of less than 10 considering the accuracy in dopant positioning. This robustness remains over a large range of distances, from the strongly Coulomb interacting regime relevant for high-fidelity quantum computation to strongly coupled donor arrays of interest for quantum simulation in silicon.

cond-mat.mes-hall↗

arXiv2020

A Testbed for Assessment of Fountain Codes for Wireless Channels

Luby Transform (LT) codes are a class of fountain codes that have proved to perform very efficiently over the erasure channel. These codes are rateless in the sense that an infinite stream of encoded symbols can be generated on the fly. Furthermore, every encoded symbol is information additive and can contribute in the decoding process. An important application of fountain codes which is being considered is the delivery of content over mobile wireless channels. Fountain codes have low computational complexity and fast encoding and decoding algorithms which makes them attractive for real time applications such as streaming video over wireless channels. L T codes are known to perform close to capacity on the binary erasure channel and it is envisaged that they would have good performance on other channels such as mobile communication channels and satellite links. This paper considers the development of a test-bed to study the performance of fountain codes over such channels. The performance of LT codes on the binary symmetric channel and Additive White Gaussian Noise (A WGN) Channel is presented as examples of the testbed usage.

eess.SP↗

arXiv2020

Epitaxial growth of SiC on (100) Diamond

We demonstrate locally coherent heteroepitaxial growth of silicon carbide (SiC) on diamond, a result contrary to current understanding of heterojunctions as the lattice mismatch exceeds $20\%$. High-resolution transmission electron microscopy (HRTEM) confirms the quality and atomic structure near the interface. Guided by molecular dynamics simulations, a theoretical model is proposed for the interface wherein the large lattice strain is alleviated via point dislocations in a two-dimensional plane without forming extended defects in three dimensions. The possibility of realising heterojunctions of technologically important materials such as SiC with diamond offers promising pathways for thermal management of high power electronics. At a fundamental level, the study redefines our understanding of heterostructure formation with large lattice mismatch.

cond-mat.mtrl-sci↗

arXiv2018

Valley filtering and spatial maps of coupling between silicon donors and quantum dots

Exchange coupling is a key ingredient for spin-based quantum technologies since it can be used to entangle spin qubits and create logical spin qubits. However, the influence of the electronic valley degree of freedom in silicon on exchange interactions is presently the subject of important open questions. Here we investigate the influence of valleys on exchange in a coupled donor/quantum dot system, a basic building block of recently proposed schemes for robust quantum information processing. Using a scanning tunneling microscope tip to position the quantum dot with sub-nm precision, we find a near monotonic exchange characteristic where lattice-aperiodic modulations associated with valley degrees of freedom comprise less than 2~\% of exchange. From this we conclude that intravalley tunneling processes that preserve the donor's $\pm x$ and $\pm y$ valley index are filtered out of the interaction with the $\pm z$ valley quantum dot, and that the $\pm x$ and $\pm y$ intervalley processes where the electron valley index changes are weak. Complemented by tight-binding calculations of exchange versus donor depth, the demonstrated electrostatic tunability of donor/QD exchange can be used to compensate the remaining intravalley $\pm z$ oscillations to realise uniform interactions in an array of highly coherent donor spins.

cond-mat.mes-hall↗

arXiv2018

Measurements and atomistic theory of electron $g$ factor anisotropy for phosphorus donors in strained silicon

This work reports the measurement of electron $g$ factor anisotropy ($| Δg |$ = $| g_{001} - g_{1 \bar 1 0} |$) for phosphorous donor qubits in strained silicon (sSi = Si/Si$_{1-x}$Ge$_x$) environments. Multi-million-atom tight-binding simulations are performed to understand the measured decrease in $| Δg |$ as a function of $x$, which is attributed to a reduction in the interface-related anisotropy. For $x <$7\%, the variation in $| Δg |$ is linear and can be described by $η_x x$, where $η_x \approx$1.62$\times$ 10$^{-3}$. At $x$=20\%, the measured $| Δg |$ is 1.2 $\pm$ 0.04 $\times$ 10$^{-3}$, which is in good agreement with the computed value of 1$\times 10^{-3}$. When strain and electric fields are applied simultaneously, the strain effect is predicted to play a dominant role on $| Δg |$. Our results provide useful insights on spin properties of sSi:P for spin qubits, and more generally for devices in spintronics and valleytronics areas of research.

cond-mat.mes-hall↗

arXiv2017

Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon

Atomic-scale understanding of phosphorous donor wave functions underpins the design and optimisation of silicon based quantum devices. The accuracy of large-scale theoretical methods to compute donor wave functions is dependent on descriptions of central-cell-corrections, which are empirically fitted to match experimental binding energies, or other quantities associated with the global properties of the wave function. Direct approaches to understanding such effects in donor wave functions are of great interest. Here, we apply a comprehensive atomistic theoretical framework to compute scanning tunnelling microscopy (STM) images of subsurface donor wave functions with two central-cell-correction formalisms previously employed in the literature. The comparison between central-cell models based on real-space image features and the Fourier transform profiles indicate that the central-cell effects are visible in the simulated STM images up to ten monolayers below the silicon surface. Our study motivates a future experimental investigation of the central-cell effects via STM imaging technique with potential of fine tuning theoretical models, which could play a vital role in the design of donor-based quantum systems in scalable quantum computer architectures.

cond-mat.mtrl-sci↗

arXiv2017

Quantum renormalization group of XY model in two dimensions

We investigate entanglement and quantum phase transition (QPT) in a two-dimensional Heisenberg anisotropic spin-1/2 XY model, using quantum renormalization group method (QRG) on a square lattice of $N\times N$ sites. The entanglement through geometric average of concurrences is calculated after each step of the QRG. We show that the concurrence achieves a non zero value at the critical point more rapidly as compared to one-dimensional case. The relationship between the entanglement and the quantum phase transition is studied. The evolution of entanglement develops two saturated values corresponding to two different phases. We compute the first derivative of the concurrence, which is found to be discontinuous at the critical point $γ=0$, and indicates a second-order phase transition in the spin system. Further, the scaling behaviour of the system is investigated by computing the first derivative of the concurrence in terms of the system size.

quant-ph↗

arXiv2016

Spatial dependence of entanglement renormalization in $XY$ model

In this article a comparative study of the renormalization of entanglement in one, two and three dimensional space and its relation with quantum phase transition (QPT) near the critical point is presented by implementing the Quantum Renormalization Group (QRG) technique. Adopting the Kadanoff's block approach, numerical results for the concurrence are obtained for the spin -1/2 $XY$ model in all the spatial dimensions. The results show similar qualitative behavior as we move from the lower to the higher dimensions in space but the number of iterations reduces for achieving the QPT in the thermodynamic limit. We find that in the two dimensional and three dimensional spin -1/2 $XY$ model, maximum values of the concurrence reduce by the factor of $1/n$ $(n=2,3)$ with reference to the maximum value of one dimensional case. Moreover, we study the scaling behavior and the entanglement exponent. We compare the results for one, two and three dimensional cases and illustrate how the system evolves near the critical point.

quant-ph↗