arXiv subjects

M. Surendran

Publications and source records attributed to M. Surendran.

3 recordsLinked to original sources

arXiv2026

Effect of Rapid Thermal Annealing on the Superconductivity of ALD-Grown TiN thin films

Titanium nitride (TiN) is a promising superconducting material for scalable quantum technologies owing to its tunable kinetic inductance and compatibility with CMOS thin-film processing. However, the superconducting performance of atomic-layer-deposited TiN can be degraded by oxygen incorporation, off-stoichiometry, and crystallographic disorder. In this work, we investigate rapid thermal annealing (RTA) in high-purity nitrogen as a post-deposition strategy to improve polycrystalline TiN films grown by RF-biased plasma-enhanced atomic layer deposition. Grazing-incidence X-ray diffraction reveals reduced peak broadening, a smaller lattice parameter, and a stronger (111) preferred orientation with increasing annealing temperature. X-ray photoelectron spectroscopy depth profiling shows reduced oxygen-related bonding and a shift toward a Ti--N-dominated chemical environment after annealing. These structural and chemical changes result in a 25% increase in the superconducting transition temperature and a significant narrowing of the transition width. Annealing also reduced the sheet resistance and the estimated sheet kinetic inductance, increased the residual resistance ratio, and improved the magnetic-field tolerance. Together, the structural, chemical, and transport results are consistent with reduced material disorder and improved superconducting uniformity. Because RTA is a relatively low thermal budget and is a semiconductor fabrication compatible process, it offers a practical route to improve the quality of ALD-grown TiN for superconducting applications.

cond-mat.supr-con↗

arXiv2025

Low-Gap Hf-HfOx-Hf Josephson Junctions for meV-Scale Particle Detection

Superconducting qubits have motivated the exploration of Josephson-junction technologies beyond quantum computing, with emerging applications in low-energy photon and phonon detection for astrophysics and dark matter searches. Achieving sensitivity at the THz (meV) scale requires materials with smaller superconducting gaps than those of conventional aluminum or niobium-based devices. Here, we report the fabrication and characterization of hafnium (Hf)-based Josephson junctions (Hf-HfOx-Hf), demonstrating Hf as a promising low-Tc material platform for ultra-low threshold single THz photon and single-phonon detection. Structural and chemical analyses reveal crystalline films and well-defined oxide barriers, while electrical transport measurements at both room and cryogenic temperatures exhibit clear Josephson behavior, enabling extraction of key junction parameters such as critical current, superconducting gap and normal-state resistance. This work presents the first comprehensive study of Hf-based junctions and their potential for next-generation superconducting detectors and qubit architectures leveraging low superconducting gap energies.

cond-mat.supr-con↗

arXiv2022

Quasi-epitaxial growth of BaTiS$_3$ films

Perovskite chalcogenides have emerged as a new class of semiconductors with tunable band gap in the visible-infrared region. High quality thin films are critical to understand the fundamental properties and realize the potential applications based on these materials. We report growth of quasi-epitaxial thin films of quasi one-dimensional (quasi-1D) hexagonal chalcogenide BaTiS$_3$ by pulsed laser deposition. We identified the optimal growth conditions by varying the growth parameters such as the substrate temperature and H2S partial pressure and examined their effects on the thin film structure. High resolution thin film X-Ray diffraction shows strong texture in the out-of-plane direction, whereas no evidence of in-plane relationship between the film and the substrate is observed. Grazing incidence wide-angle X-ray scattering and scanning transmission electron microscopy studies reveal the presence of weak epitaxial relationships of the film and the substrate, despite a defective interface. Our study opens up a pathway to realize quasi-1D hexagonal chalcogenide thin films and their heterostructures with perovskite chalcogenides.

cond-mat.mtrl-sci↗