Electronic structure of the Gd-based intermetallics GdCu$_2$Ge$_2$ and GdCuAl$_3$
We present a temperature-dependent reflectivity study of single crystals of the ternary intermetallic compounds GdCu$_2$Ge$_2$ and GdCuAl$_3$ over a broad spectral range (100-18000 cm$^{-1}$, equivalent to 12 meV-2.23 eV) down to 13 K. Below 2000 cm$^{-1}$, the optical spectra are dominated by the response of itinerant charge carriers exhibiting two distinct scattering rates. While the response of the highly-damped charge carriers shows negligible temperature dependence, the weakly-damped carriers closely follow the dc resistivity and are significantly suppressed in GdCuAl$_3$, consistent with its higher resistivity. Supported by density-functional-theory calculations, we further show that elemental substitution from GdCu$_2$Ge$_2$ to GdCuAl$_3$ tunes the X-site $p$-orbital character (X = Ge, Al) of the low-energy electronic structure, while preserving key features such as linearly dispersing bands and saddle points despite the accompanying structural modifications. The reduced experimental plasma frequency of both compounds signals enhanced electronic correlations, which induce moderate band-energy renormalization.