arXiv subjects

M. Fanfoni

Publications and source records attributed to M. Fanfoni.

14 recordsLinked to original sources

arXiv2019

Driving with temperature the synthesis of graphene films on Ge(110)

We systematically investigate the chemical vapor deposition growth of graphene on Ge(110) as a function of the deposition temperature close to the Ge melting point. By merging spectroscopic and morphological information, we find that the quality of graphene films depends critically on the growth temperature improving significantly by increasing this temperature in the 910-930 {\deg}C range. We correlate the abrupt improvement of the graphene quality to the formation of a quasi-liquid Ge surface occurring in the same temperature range, which determines increased atom diffusivity and sublimation rate. Being observed for diverse Ge orientations, this process is of general relevance for graphene synthesis on Ge.

cond-mat.mes-hall↗

arXiv2019

Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing

Si/Ge heteroepitaxial dots under tensile strain are grown on nanostructured Ge substrates produced by high-temperature flash heating exploiting the spontaneous faceting of the Ge(001) surface close to the onset of surface melting. A very diverse growth mode is obtained depending on the specific atomic structure and step density of nearby surface domains with different vicinal crystallographic orientations. On highly-miscut areas of the Ge(001) substrate, the critical thickness for islanding is lowered to about 5 ML, in contrast to the 11 ML reported for the flat Ge(001) surface, while on unreconstructed (1x1) domains the growth is Volmer-Weber driven. An explanation is proposed considering the diverse relative contributions of step and surface energies on misoriented substrates. In addition, we show that the bottom-up pattern of the substrate naturally formed by thermal annealing determines a spatial correlation for the dot sites.

cond-mat.mes-hall↗

arXiv2019

Abrupt changes in the graphene on Ge(001) system at the onset of surface melting

By combining scanning probe microscopy with Raman and x-ray photoelectron spectroscopies, we investigate the evolution of CVD-grown graphene/Ge(001) as a function of the deposition temperature in close proximity to the Ge melting point, highlighting an abrupt change of the graphene's quality, morphology, electronic properties and growth mode at 930 degrees. We attribute this discontinuity to the incomplete surface melting of the Ge substrate and show how incomplete melting explains a variety of diverse and long-debated peculiar features of the graphene/Ge(001), including the characteristic nanostructuring of the Ge substrate induced by graphene overgrowth. We find that the quasi-liquid Ge layer formed close to 930 degrees is fundamental to obtain high-quality graphene, while a temperature decrease of 10 degrees already results in a wrinkled and defective graphene film.

cond-mat.mtrl-sci↗

arXiv2018

Formation of extended thermal etch pits on annealed Ge wafers

An extended formation of faceted pit-like defects on Ge(001) and Ge(111) wafers was obtained by thermal cycles to T> 750 {\deg}C. This temperature range is relevant in many surface-preparation recipes of the Ge surface. The density of the defects depends on the temperature reached, the number of annealing cycles performed and correlates to the surface-energy stability of the specific crystal orientation. We propose that the pits were formed by preferential desorption from the strained regions around dislocation pile-ups. Indeed, the morphology of the pits was the same as that observed for preferential chemical etching of dislocations while the spatial distribution of the pits was clearly non-Poissonian in line with mutual interactions between the core dislocations.

cond-mat.mtrl-sci↗

arXiv2018

Early stage of CVD graphene synthesis on Ge(001) substrate

In this work we shed light on the early stage of the chemical vapor deposition of graphene on Ge(001) surfaces. By a combined use of microRaman and x-ray photoelectron spectroscopies, and scanning tunneling microscopy and spectroscopy, we were able to individuate a carbon precursor phase to graphene nucleation which coexists with small graphene domains. This precursor phase is made of C aggregates with different size, shape and local ordering which are not fully sp2 hybridized. In some atomic size regions these aggregates show a linear arrangement of atoms as well as the first signature of the hexagonal structure of graphene. The carbon precursor phase evolves in graphene domains through an ordering process, associated to a re-arrangement of the Ge surface morphology. This surface structuring represents the embryo stage of the hills-and-valleys faceting featured by the Ge(001) surface for longer deposition times, when the graphene domains coalesce to form a single layer graphene film.

cond-mat.mtrl-sci↗

arXiv2015

Statistical approach based on 1D Voronoi tessellation as a tool for studying the randomness of fractional digits of some irrational numbers

An "experimental" study on the randomness of the fractional digits of $\pi$, $e$ and $\phi$ irrational numbers are presented. This is done by exploiting the $1D$ Poisson-Voronoi tessellation. We employed two approaches and in both cases, within the numerical error, no differences have been detected between the irrational fractional digits and an equivalent random sequence of digits. The number of tested digits is $1.6 \times 10^7$ and $4 \times 10^7$ for the first and second approach, respectively. Although not shown here, we investigated several irrational numbers and all of them have displayed a similar behavior.

math.GM↗

arXiv2012

Beyond the constraints underlying Kolmogorov-Johnson-Mehl-Avrami theory related to the growth laws

The theory of Kolmogorov-Johnson-Mehl-Avrami (KJMA) for phase transition kinetics is subjected to severe limitations concerning the functional form of the growth law. This paper is devoted to side step this drawback through the use of correlation function approach. Moreover, we put forward an easy-to-handle formula, written in terms of the experimentally accessible actual extended volume fraction, which is found to match several types of growths. Computer simulations have been done for corroborating the theoretical approach.

cond-mat.mtrl-sci↗

arXiv2011

Hug-like island growth of Ge on strained vicinal Si(111) surfaces

We examine the structure and the evolution of Ge islands epitaxially grown on vicinal Si(111) surfaces by scanning tunneling microscopy. Contrary to what is observed on the singular surface, three-dimensional Ge nanoislands form directly through the elastic relaxation of step-edge protrusions during the unstable step-flow growth. As the substrate misorientation is increased, the islands undergo a shape transformation which is driven by surface energy minimization and controlled by the miscut angle. Using finite element simulations, we show that the dynamics of islanding observed in the experiment results from the anisotropy of the strain relaxation.

cond-mat.mes-hall↗

arXiv2010

Ripple-to-dome transition: the growth evolution of Ge on vicinal Si(1 1 10) surface

We present a detailed scanning tunnelling microscopy study which describes the morphological transition from ripple to dome islands during the growth of Ge on the vicinal Si(1 1 10) surface . Our experimental results show that the shape evolution of Ge islands on this surface is markedly different from that on the flat Si(001) substrate and is accomplished by agglomeration and coalescence of several ripples. By combining first principle calculations with continuum elasticity theory, we provide an accurate explanation of our experimental observations.

cond-mat.mes-hall↗

arXiv2006

Experimental corroboration of the Mulheran-Blackman explanation of the scale invariance in thin film growth: the case of InAs quantum dots on GaAs(001)

Mulheran and Blackman have provided a simple and clear explanation of the scale invariance of the island size distribution at the early stage of film growth [Phil. Mag. Lett. 72, 55 (1995)]. Their theory is centered on the concept of capture zone properly identified by Voronoi cell. Here we substantiate experimentally their theory by studying the scale invariance of InAs quantum dots (QDs) forming on GaAs(001) substrate. In particular, we show that the volume distributions of QDs well overlap the corrisponding experimental distributions of the Voronoi-cell areas. The interplay between the experimental data and the numerical simulations allowed us to determine the spatial correlation length among QDs.

cond-mat.mtrl-sci↗

arXiv2005

How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: the case of InAs/GaAs(001)

The two- to three-dimensional growth transition in the InAs/GaAs(001) heterostructure has been investigated by atomic force microscopy. The kinetics of the density of three dimensional quantum dots evidences two transition thresholds at 1.45 and 1.59 ML of InAs coverage, corresponding to two separate families, small and large. Based on the scaling analysis, such families are characterized by different mechanisms of aggregation, involving the change of the critical nucleus size. Remarkably, the small ones give rise to a wealth of "monomers" through the erosion of the step edges, favoring the explosive nucleation of the large ones.

cond-mat.mtrl-sci↗

arXiv2005

Kinetic theory of cluster impingement in the framework of statistical mechanics of rigid disks

The paper centres on the evaluation of the function n(theta)=N(theta)/N0, that is the normalized number of islands as a function of coverage 0<theta<1, given N0 initial nucleation centres (dots) having any degree of spatial correlation. A mean field approach has been employed: the islands have the same size at any coverage. In particular, as far as the random distribution of dots is concerned, the problem has been solved by considering the contribution of binary collisions between islands only. With regard to correlated dots, we generalize a method previously applied to the random case only. In passing, we have made use of the exclusion probability reported in [S. Torquato, B. Lu, J. Rubinstein, Phys.Rev.A 41, 2059 (1990)], for determining the kinetics of surface coverage in the case of correlated dots, improving our previous calculation [M. Tomellini, M. Fanfoni, M. Volpe Phys. Rev.B 62, 11300, (2000)].

cond-mat.stat-mech↗

arXiv2003

Eliminating overgrowth effects in Poisson spatial process through the correlation among actual nuclei

It has been shown that the KJMA (Kolmogorov-Johnson-Mehl-Avrami) solution of phase transition kinetics can be set as a problem of correlated nucleation [Phys.Rev.B65, 172301 (2002)]. In this paper the equivalence between the standard solution and the approach that makes use of the actual nucleation rate, i.e. that takes into account spatial correlation among nuclei and/or grains, is shown by a direct calculation in case of linear growth and constant nucleation rate. As a consequence, the intrinsic limit of KJMA theory due to the phenomenon of phantom overgrowth is, at last, overcome. This means that thanks to this new approach it is possible, for instance, to describe phase transition governed by diffusion.

cond-mat.mtrl-sci↗

arXiv2003

Beyond the Kolmogorov Johnson Mehl Avrami kinetics: inclusion of the spatial correlation

The Kolmogorov-Johnson-Mehl-Avrami model, which is a nucleation and growth poissonian process in space, has been implemented by taking into account spatial correlation among nuclei. This is achieved through a detailed study of a system of distinguishable and correlated dots (nuclei). The probability that no dots be in a region of the space has been evaluated in terms of correlation functions. The theory has been applied to describe nucleation and growth in two dimensions under constant nucleation rate, where correlation among nuclei depends upon the size of the nucleus. We propose a simple formula for describing the phase transition kinetics in the presence of correlation among nuclei. The theory is applied to the constant nucleation rate process when correlation depends upon the nucleus-birth time. It is shown that the random sequential adsorption and Tobin process can be analyzed in the framework of the simultaneous nucleation case, admitting a common rationale that is apart from an appropriate re-scaling they represent the same process from the mathematical point of view.

cond-mat.stat-mech↗