arXiv subjects

M. Dub

Publications and source records attributed to M. Dub.

6 recordsLinked to original sources

arXiv2026

Neural-network reconstruction of THz transmission spectra using electrically tunable AlGaN/GaN plasmonic-crystal analyzer

We demonstrate machine learning (ML) based reconstruction of terahertz transmission spectra using an electrically tunable grating-gate AlGaN/GaN plasmonic-crystal analyzer. The analyzer encodes the transmission spectrum into a voltage-dependent intensity, which is then inverted by an ML algorithm. A feedforward neural network trained on a synthetic dataset is validated experimentally on four samples in standard Fourier Transform Infrared (FTIR) mode and in direct (fixed-mirror) acquisition mode. The network achieves a mean square error (MSE) of the reconstruction of 0.015 in FTIR mode and 0.038 in direct mode, correctly identifying six out of seven ground-truth resonances in each mode. Against a first-difference Tikhonov regularization baseline, the mean reconstruction error is reduced 3.6 times in FTIR mode and 1.55 times in direct mode, with fewer spurious peaks and lower peak-position errors. Voltage-tunable plasmonic filtering combined with neural-network inversion establishes an interferometer-free architecture for THz spectral reconstruction.

physics.optics↗

arXiv2026

Potential of Graphene/AlGaN/GaN heterostructures to study the drag and two-stream instability effects

Graphene/AlGaN/GaN heterostructures are proposed to investigate the drag and two-stream instability effects. In this study, graphene grown by chemical vapor deposition was transferred from copper onto the top of the standard AlGaN/GaN wafer, forming a heterostructure with two conducting layers separated by an AlGaN barrier layer. Contacts fabricated to the two-dimensional electron gas and graphene allowed us to study the drag current induced in graphene by passing the drive current through the two-dimensional electron gas. At low temperatures, the graphene drag current exhibited quantum oscillations as a function of the drive voltage. As temperature increases, quantum oscillations disappear, and the magnitude of the drag current increases. Graphene/AlGaN/GaN heterostructures are a promising platform for studying drag and two-stream instability effects, especially if the AlGaN barrier layer thickness can be reduced to a few nanometers.

cond-mat.mes-hall↗

arXiv2025

Effect of current on terahertz plasmons in AlGaN/GaN heterostructures

Terahertz transmittance spectra of plasmonic crystals based on two-dimensional electron gas in AlGaN/GaN heterostructures were studied in grating-gate and gateless plasmonic crystals as a function of lateral bias. The decrease of the plasmon resonance frequencies (redshift) with increase of the lateral current was observed for both types of structures. We show that the change of the electron concentration profile and Joule heating are the main phenomena responsible for the shift of plasma resonant frequency. These results are important for designing plasmonic resonances based filters, detectors, and emitters operating under voltage bias conditions.

physics.app-ph↗

arXiv2025

Effect of temperature on 2D terahertz plasmons and electron effective mass in AlGaN/GaN

The effect of temperature on two-dimensional plasmons in large-area AlGaN/GaN plasmonic crystals was studied experimentally. With the temperature increase the resonant plasmon frequency redshifts due to the strong temperature dependence of the electron effective mass and electron concentration under open to the environment surface of AlGaN. The temperature dependence of electron effective mass is confirmed by the cyclotron resonance measurements.

physics.optics↗

arXiv2024

Pressure tuning of HgCdTe epitaxial layers -- the role of the highly disordered buffer layer

HgCdTe alloys are unique because by increasing the Cd content x, one modifies the band structure from inverted to normal, which fundamentally modifies the dispersion of bulk and surface or edge (in the case of quantum wells) energy states. Using alloys with x close to the concentration x_c at which the band inversion transition is observed and with additional application of hydrostatic pressure (p), one creates a favorable playground for studying the evolution of Dirac matter and its topological properties. In this work, cryogenic magnetospectroscopy in quantizing magnetic fields (B) at the far-infrared is used to study inter-Landau-level transitions in high-quality HgCdTe MBE-grown epitaxial layers with x ~ x_c as a function of p up to 4.2 kbar. Special attention is paid to elucidate the role of the substrate and buffer layers, which usually modify the pressure coefficients of epitaxial layers. For this purpose, comparative measurements were carried out on as-grown epilayers with a GaAs substrate and on free-standing layers obtained by etching off the substrate. Spectra registered as a function of B (at given p) were analyzed with the help of the Kane model modified to include magnetic field. The pressure coefficient as well as the difference between conduction and valence band deformation potentials of the free-standing layer were determined at 2 K. Surprisingly, the deformation potentials and pressure coefficients of the epitaxial layer and those of the free-standing layer differed by no more than 10 % in the pressure range up to 4.2 kbar. This finding questions the common belief of a dominant influence of the substrate on the pressure coefficients of epitaxial layers...

cond-mat.mtrl-sci↗

arXiv2023

Electrical Tuning of Terahertz Plasmonic Crystal Phases

We present an extensive study of resonant two-dimensional (2D) plasmon excitations in grating-gated quantum well heterostructures, which enable an electrical control of periodic charge carrier density profile. Our study combines theoretical and experimental investigations of nanometer-scale AlGaN/GaN grating-gate structures and reveals that all terahertz (THz) plasmonic resonances in these structures can be explained only within the framework of the plasmonic crystal model. We identify two different plasmonic crystal phases. The first is the delocalized phase, where THz radiation interacts with the entire grating-gate structure that is realized at a weakly modulated 2D electron gas (2DEG) regime. In the second, the localized phase, THz radiation interacts only with the ungated portions of the structure. This phase is achieved by fully depleting the gated regions, resulting in strong modulation. By gate-controlling of the modulation degree, we observe a continuous transition between these phases. We also discovered that unexpectedly the resonant plasma frequencies of ungated parts (in the localized phase) still depend on the gate voltage. We attribute this phenomenon to the specific depletion of the conductive profile in the ungated region of the 2DEG, the so-called edge gating effect. Although we study a specific case of plasmons in AlGaN/GaN grating-gate structures, our results have a general character and are applicable to any other semiconductor-based plasmonic crystal structures. Our work represents the first demonstration of an electrically tunable transition between different phases of THz plasmonic crystals, which is a crucial step towards a deeper understanding of THz plasma physics and the development of all-electrically tunable devices for THz optoelectronics.

cond-mat.other↗