arXiv subjects

M. Amato

Publications and source records attributed to M. Amato.

7 recordsLinked to original sources

arXiv2025

Evidence for atomic-scale vibron-mediated electron bunching

Due to the Coulomb blockade effect, electrons rarely bunch during transport, a phenomenon observed only in a few specially engineered mesoscopic configurations. In this work, we introduce an atomically resolved shot-noise study to demonstrate the possibility of electron bunching through vibrational coupling which takes place in an atomically sized nano-electro-mechanical system. Using tunnelling spectroscopy, we observe signatures of vibron-assisted tunnelling on an Fe impurity in Bi$_2$Se$_3$. Notably, simultaneous shot-noise measurements at the centre of the vibrating impurity reveal super-Poissonian noise. In the absence of alternative sources of super-Poissonian noise, this implies vibronic-coupling-induced bunching of electrons during the tunnelling process through the impurity, as theoretically predicted decades ago. As a future outlook, if coherence between electrons can be implemented, vibron-mediated electron bunching at single atomic sites may be exploited as a local injection source of $N$-paired electrons.

cond-mat.str-el↗

arXiv2024

Tuning superconductivity in nanosecond laser annealed boron doped $Si_{1-x}Ge_{x}$ epilayers

Superconductivity in ultra-doped $Si_{1-x}Ge_{x}:B$ epilayers is demonstrated by nanosecond laser doping, which allows introducing substitutional B concentrations well above the solubility limit and up to $7\,at.\%$. A Ge fraction $x$ ranging from 0 to 0.21 is incorporated in $Si:B$ : 1) through a precursor gas by Gas Immersion Laser Doping; 2) by ion implantation, followed by nanosecond laser annealing; 3) by UHV-CVD growth of a thin Ge layer, followed by nanosecond laser annealing. The 30 nm and 80 nm thick $Si_{1-x}Ge_{x}:B$ epilayers display superconducting critical temperatures $T_c$ tuned by B and Ge between 0 and 0.6 K. Within BCS weak-coupling theory, $T_c$ evolves exponentially with both the density of states and the electron-phonon potential. While B doping affects both, through the increase of the carrier density and the tensile strain, Ge incorporation allows addressing independently the lattice deformation influence on superconductivity. To estimate the lattice parameter modulation with B and Ge, Vegard's law is validated for the ternary $SiGeB$ bulk alloy by Density Functional Theory calculations. Its validity is furthermore confirmed experimentally by X-Ray Diffraction. We highlight a global linear dependence of $T_c$ vs. lattice parameter, common for both $Si:B$ and $Si_{1-x}Ge_{x}:B$, with $δT_c/T_c \sim 50\,\%$ for $δa/a \sim 1\,\%$.

cond-mat.supr-con↗

arXiv2023

Strain engineering of the electronic states of silicon-based quantum emitters

Light-emitting complex defects in silicon have been considered a potential platform for quantum technologies based on spin and photon degrees of freedom working at telecom wavelengths. Their integration in complex devices is still in its infancy, and it was mostly focused on light extraction and guiding. Here we address the control of the electronic states of carbon-related impurities (G-centers) via strain engineering. By embedding them in patches of silicon on insulator and topping them with SiN, symmetry breaking along [001] and [110] directions is demonstrated, resulting in a controlled splitting of the zero phonon line (ZPL), as accounted for by the piezospectroscopic theoretical framework. The splitting can be as large as 18 meV and it is finely tuned by selecting patch size or by moving in different positions on the patch. Some of the split, strained ZPLs are almost fully polarized and their overall intensity is enhanced up to 7 times with respect to the flat areas, whereas their recombination dynamics is slightly affected. Our technique can be extended to other impurities and Si-based devices such as suspended bridges, photonic crystal microcavities, Mie resonators, and integrated photonic circuits.

cond-mat.mes-hall↗

arXiv2022

Atomic scale visualization of the p-d hybridization in III-V semiconductors doped with transition metal impurities

p-d hybridization of transition metal impurities in a semiconductor host is the mechanism that couples valence-band electrons and localized spins. We use scanning tunneling microscopy and spectroscopy combined with density functional theory to probe at the atomic scale hybridization of Cr single impurities with GaAs host. Combining spatial density of states mapping and in-gap states spectroscopy of the Cr substituted at the surface of the semiconductor, we give a detailed picture of the spatial extension and the electronic structure of the strongly anisotropic wave function of Cr on GaAs(110). First principles calculations allow to identify electronic character and origin of each states and show that the main resonance peaks and the wave function with "drop-eyes" lobes experimentally observed for 3d metal impurities in III-V semiconductor are direct local evidences of the p-d hybridization.

cond-mat.mtrl-sci↗

arXiv2020

Observation of a phonon avalanche in highly photoexcited hybrid perovskite single crystals

In hybrid lead halide perovskites, the coupling between photogenerated charges and the ionic degrees of freedom plays a crucial role in defining the intrinsic limit of carrier mobility and lifetime. However, direct investigation of this fundamental interaction remains challenging because its relevant dynamics occur on ultrashort spatial and ultrafast temporal scales. Here, we unveil the coupled electron-lattice dynamics of a CH3NH3PbI3 single crystal upon intense photoexcitation through a unique combination of ultrafast electron diffraction, time-resolved photoelectron spectroscopy, and time-dependent ab initio calculations. We observe the structural signature of a hot-phonon bottleneck effect that prevents rapid carrier relaxation, and we uncover a phonon avalanche mechanism responsible for breaking the bottleneck. The avalanche involves a collective emission of low-energy phonons - mainly associated with the organic sub-lattice - that proceeds in a regenerative manner and correlates with the accumulation and confinement of photocarriers at the crystal surface. Our results indicate that in hybrid perovskites carrier transport and spatial confinement are key to controlling the electron-phonon interaction and their rational engineering is relevant for future applications in optoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2002

WIMP Search by DAMA at Gran Sasso

DAMA is searching for rare processes by developing and using several kinds of radiopure scintillators: in particular, NaI(Tl), liquid Xenon and CaF$_2$(Eu). Here only the results released so far on the WIMP annual modulation signature are summarized and compared with results from other experiments, including the recent re-analysis of CDMS-I data. Next perspectives are also shortly addressed.

astro-ph↗

arXiv2001

WIMP search by the DAMA experiment at Gran Sasso

DAMA is searching for rare processes by developing and using several kinds of radiopure scintillators: in particular, NaI(Tl), liquid Xenon and CaF$_2$(Eu). The main results are here summarized with particular attention to the investigation of the WIMP annual modulation signature.

hep-ph↗