Lucca Figari | arXiv Science

arXiv2026

Visualizing Berry curvature in a Floquet-Chern insulator

Circularly polarized light can open a topological gap in a gapless Dirac system, creating a Floquet-Chern insulator. However, its Berry curvature has not been directly resolved. Here we use circular-dichroism time- and angle-resolved photoemission spectroscopy (Tr-ARPES) to map the light-induced Berry curvature of Floquet-Bloch states on the surface of Bi$_2$Se$_3$. By comparing spectra for opposite helicities of the mid-infrared pump, we isolate the induced geometric response. We observe alternating-sign Berry-curvature features at Floquet gaps that repeat at intervals set by the pump photon energy and redistribute with pump field strength in agreement with calculations for a periodically driven Dirac Hamiltonian. Both the induced Berry-curvature and the Floquet Dirac gap decay faster than the replica intensity, showing that spectral replicas can persist even after coherent Floquet hybridization weakens. These results establish momentum-resolved Berry-curvature mapping as a direct probe of light-induced topology and coherent Floquet band formation.

cond-mat.mes-hall↗

arXiv2022

Room-Temperature Valence Transition in a Strain-Tuned Perovskite Oxide

Cobalt oxides have long been understood to display intriguing phenomena known as spin-state crossovers, where the cobalt ion spin changes vs. temperature, pressure, etc. A very different situation was recently uncovered in praseodymium-containing cobalt oxides, where a first-order coupled spin-state/structural/metal-insulator transition occurs, driven by a remarkable praseodymium valence transition. Such valence transitions, particularly when triggering spin-state and metal-insulator transitions, offer highly appealing functionality, but have thus far been confined to cryogenic temperatures in bulk materials (e.g., 90 K in Pr1-xCaxCoO3). Here, we show that in thin films of the complex perovskite (Pr1-yYy)1-xCaxCoO3-δ, heteroepitaxial strain tuning enables stabilization of valence-driven spin-state/structural/metal-insulator transitions to at least 291 K, i.e., around room temperature. The technological implications of this result are accompanied by fundamental prospects, as complete strain control of the electronic ground state is demonstrated, from ferromagnetic metal under tension to nonmagnetic insulator under compression, thereby exposing a potential novel quantum critical point.

cond-mat.mtrl-sci↗