arXiv subjects

Lisa M. Porter

Publications and source records attributed to Lisa M. Porter.

3 recordsLinked to original sources

arXiv2026

Low cross-plane thermal conductivity of $κ$-Ga$_2$O$_3$ thin films

The thermal conductivities of (001) $κ$-Ga$_2$O$_3$ thin films deposited on $c$-plane sapphire substrates were measured with frequency-domain thermoreflectance (FDTR). The thermal conductivity increases from 1.83 $^{+0.19}_{-0.18}$ W/m$\cdot$K to 2.26 $^{+0.35}_{-0.40}$ W/m$\cdot$K as the thicknesses increase from 159 nm to 689 nm. This weak thickness dependence indicates that the majority of the intrinsic phonon mean free paths are smaller than the range of investigated film thicknesses. First-principles-based calculations that include phonon-phonon and phonon-boundary scattering capture this size-dependent behavior and support our experimental observation. Temperature-dependent measurements of a 689 nm film from 293 to 400 K show a decrease in thermal conductivity with increasing temperature due to enhanced phonon-phonon scattering. A weaker temperature dependence is observed in a 159 nm film where phonon-boundary scattering becomes more prominent. At comparable film thicknesses, our measured $κ$-Ga$_2$O$_3$ films exhibit lower values of cross-plane thermal conductivity than the other experimentally measured Ga$_2$O$_3$ polymorphs. Our experimental observations are supported by prior predictions, which suggest that the low thermal conductivity of $κ$-Ga$_2$O$_3$ results from its complex crystal structure, which leads to increased anharmonicity and lower phonon group velocities relative to other polymorphs. Thermal management strategies, such as integration with high-thermal-conductivity substrates, may thus be required to mitigate self-heating for $κ$-Ga$_2$O$_3$-based electronic devices.

cond-mat.mtrl-sci↗

arXiv2026

Kinetics studies on $κ$ to $β$-Ga$_2$O$_3$ phase transformations via in-situ high temperature X-ray diffraction

The kinetics of the $κ$ to $β$-Ga$_2$O$_3$ phase transformation were investigated in five batches of nominally phase-pure $κ$-Ga2O3 thin films heteroepitaxially grown on c-plane sapphire, with film thickness ranging from 700 to 1100 nm, using in-situ high-temperature X-ray diffraction. Phase fractions were quantitatively extracted through modified Rietveld refinement that accounts for preferred orientation, and the transformation kinetics were analyzed using the Johnson-Mehl-Avrami-Kolmogorov (JMAK) model. The applicability of the JMAK model to thin-film materials was evaluated and its lower and upper bounds for thin films and bulk materials were established. Based on this analysis, a method specifically suited for thin-film kinetic studies was developed and yielded reproducible and robust results across all five sample batches. The results indicate that the $κ$ to $β$ phase transformation in ~700-1100 nm films is best described as an interface-controlled, site-saturated nucleation with thickness-limited or effectively two-dimensional growth.

cond-mat.mtrl-sci↗

arXiv2026

First-Principles Study of Mg-Induced Phase Stabilization in Ga$_2$O$_3$ polymorphs

In this study, we investigate the effect of Mg incorporation on the relative phase stability of the four primary Ga$_2$O$_3$ polymorphs using density functional theory (DFT) calculations, with the goal of rationalizing experimental observations suggesting that diffusion from MgAl$_2$O$_4$ substrates contributes to relative stabilization of the $γ$ phase. Mg incorporation is modeled up to 25% of Ga sites within supercells derived from fully relaxed unit cells of each polymorph. Our results show that while $β$-Ga$_2$O$_3$ remains the thermodynamically most stable phase, the enthalpic differences between polymorphs decrease with increasing Mg content. The inherently disordered $γ$ phase, with its high configurational entropy, becomes less energetically unfavorable under Mg substitution, suggesting that entropy-driven stabilization may facilitate its formation under high-temperature and/or nonequilibrium growth conditions such as those previously reported. These findings provide a thermodynamic rationale for the experimental observation of the $γ$ phase during epitaxial growth on MgAl$_2$O$_4$ spinel substrates.

cond-mat.mtrl-sci↗