arXiv subjects

Liao

Publications and source records attributed to Liao.

3 recordsLinked to original sources

arXiv2025

One Rank at a Time: Cascading Error Dynamics in Sequential Learning

Sequential learning -- where complex tasks are broken down into simpler, hierarchical components -- has emerged as a paradigm in AI. This paper views sequential learning through the lens of low-rank linear regression, focusing specifically on how errors propagate when learning rank-1 subspaces sequentially. We present an analysis framework that decomposes the learning process into a series of rank-1 estimation problems, where each subsequent estimation depends on the accuracy of previous steps. Our contribution is a characterization of the error propagation in this sequential process, establishing bounds on how errors -- e.g., due to limited computational budgets and finite precision -- affect the overall model accuracy. We prove that these errors compound in predictable ways, with implications for both algorithmic design and stability guarantees.

cs.LG↗

arXiv2024

Reflections from the 2024 Large Language Model (LLM) Hackathon for Applications in Materials Science and Chemistry

Here, we present the outcomes from the second Large Language Model (LLM) Hackathon for Applications in Materials Science and Chemistry, which engaged participants across global hybrid locations, resulting in 34 team submissions. The submissions spanned seven key application areas and demonstrated the diverse utility of LLMs for applications in (1) molecular and material property prediction; (2) molecular and material design; (3) automation and novel interfaces; (4) scientific communication and education; (5) research data management and automation; (6) hypothesis generation and evaluation; and (7) knowledge extraction and reasoning from scientific literature. Each team submission is presented in a summary table with links to the code and as brief papers in the appendix. Beyond team results, we discuss the hackathon event and its hybrid format, which included physical hubs in Toronto, Montreal, San Francisco, Berlin, Lausanne, and Tokyo, alongside a global online hub to enable local and virtual collaboration. Overall, the event highlighted significant improvements in LLM capabilities since the previous year's hackathon, suggesting continued expansion of LLMs for applications in materials science and chemistry research. These outcomes demonstrate the dual utility of LLMs as both multipurpose models for diverse machine learning tasks and platforms for rapid prototyping custom applications in scientific research.

cs.LG↗

arXiv2022

Robust Dirac lines against Ge vacancy and possible spin-orbit Dirac points in nonsymmorphic HfGe0.92Te

Looking for new materials with Dirac points has been a fascinating subject of research. Here we report the growth, crystal structure, and band structure of HfGe0.92Te single crystals, featuring three different types of Dirac points. HfGe0.92Te crystalizes in a nonsymmorphic tetragonal space group P4/nmm (No. 129), having square Ge-atom plane with vacancies about 8%. Despite the vacancies on Ge site, the Dirac nodal line composed of conventional Dirac points vulnerable to spin-orbit coupling (SOC) is observed using angle-resolved photoemission spectroscopy, accompanied with the robust Dirac line protected by the nonsymmorphic symmetry against both SOC and vacancies. Specially, spin-orbit Dirac points (SDPs) originated from the surface formed under SOC are hinted to exist according to our experiments and calculations. Quasi-two-dimensional (quasi-2D) characters are observed and further confirmed by angular-resolved magnetoresistance. HfGe0.92Te is a good candidate to explore exotic topological phases or topological properties with three different types of Dirac points and a promising candidate to realize 2D SDPs.

cond-mat.mtrl-sci↗