A 20-kV Optical-Injection-Enhanced 4H-SiC Reverse-Conducting IGBT With Snapback-Free Operation and Low On-State Voltage
This letter proposes a 20-kV 4H-SiC optical-injection-enhanced reverse-conducting IGBT (OIE-RC-IGBT) with snapback-free operation and low on-state voltage. Light-emitting diodes (LEDs) are integrated into the gate structure to provide optical injection during forward conduction. The emitted light generates a high concentration of photogenerated carriers in the carrier-storage layer (CSL) and drift region, thereby reducing the resistance of the JFET and drift regions and increasing the device current. Consequently, the collector-side P+/N junction is turned on earlier, effectively suppressing the snapback effect and facilitating the transition to bipolar conduction. After bipolar conduction is established, the photogenerated carriers further enhance conductivity modulation, resulting in a reduced on-state voltage. TCAD simulation results show that, compared with the conventional RC-IGBT (C-RC-IGBT), the proposed device achieves snapback-free operation while reducing the required number of MOS cells from 25 to 5. Moreover, the on-state voltage, turn-off fall time, and turn-off energy loss are reduced by 22.37%, 25.06%, and 19.69%, respectively. These results demonstrate the potential of optical injection for improving the conduction and turn-off performance of ultrahigh-voltage SiC RC-IGBTs.