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Li Yang

Publications and source records attributed to Li Yang.

At least 271 records · Page 15Linked to original sources

Using Bernstein-Vazirani Algorithm to Attack Block Ciphers

In this paper, we study applications of Bernstein-Vazirani algorithm and present several new methods to attack block ciphers. Specifically, we first present a quantum algorithm for finding the linear structures of a function. Based on it, we propose new quantum distinguishers for the 3-round Feistel scheme and a new quantum algorithm to recover partial key of the Even-Mansour construction. Afterwards, by observing that the linear structures of a encryption function are actually high probability differentials of it, we apply our algorithm to differential analysis and impossible differential cryptanalysis respectively. We also propose a new kind of differential cryptanalysis, called quantum small probability differential cryptanalysis, based on the fact that the linear structures found by our algorithm are also the linear structure of each component function. To our knowledge, no similar method was proposed before. The efficiency and success probability of all attacks are analyzed rigorously. Since our algorithm treats the encryption function as a whole, it avoid the disadvantage of traditional differential cryptanalysis that it is difficult to extending the differential path.

quant-ph↗

Moiré Excitons in Van der Waals Heterostructures

In van der Waals (vdW) heterostructures formed by stacking two monolayer semiconductors, lattice mismatch or rotational misalignment introduces an in-plane moiré superlattice. While it is widely recognized that a moiré superlattice can modulate the electronic band structure and lead to novel transport properties including unconventional superconductivity and insulating behavior driven by correlations, its influence on optical properties has not been investigated experimentally. We present spectroscopic evidence that interlayer excitons are confined by the moiré potential in a high-quality MoSe2/WSe2 heterobilayer with small rotational twist. A series of interlayer exciton resonances with either positive or negative circularly polarized emission is observed in photoluminescence, consistent with multiple exciton states confined within the moiré potential. The recombination dynamics and temperature dependence of these interlayer exciton resonances are consistent with this interpretation. These results demonstrate the feasibility of engineering artificial excitonic crystals using vdW heterostructures for nanophotonics and quantum information applications.

cond-mat.mes-hall↗

Microsecond Valley Lifetime of Defect-Bound Excitons in Monolayer WSe$_2$

In atomically thin two-dimensional semiconductors such as transition metal dichalcogenides (TMDs), controlling the density and type of defects promises to be an effective approach for engineering light-matter interactions. We demonstrate that electron-beam irradiation is a simple tool for selectively introducing defect-bound exciton states associated with chalcogen vacancies in TMDs. Our first-principles calculations and time-resolved spectroscopy measurements of monolayer WSe2 reveal that these defect-bound excitons exhibit exceptional optical properties including a recombination lifetime approaching 200 ns and a valley lifetime longer than 1 $μ$s. The ability to engineer the crystal lattice through electron irradiation provides a new approach for tailoring the optical response of TMDs for photonics, quantum optics, and valleytronics applications.

cond-mat.mes-hall↗

Counterfactual Quantum Bit Commitment

We propose a framework of bit commitment protocol using a comparison scheme and present a compound comparison scheme based on counterfactual cryptography. Finally, we propose a counterfactual quantum bit commitment protocol. In security analysis, we give the proper security parameters for counterfactual quantum bit commitment and prove that intercept attack and intercept/resend attack are ineffective attack for our protocol. In addition, we explain that counterfactual quantum bit commitment protocol cannot be attacked with no-go theorem attack by current technology.

quant-ph↗

A voting scheme with post-quantum security based on physical laws

Traditional cryptography is under huge threat along of the evolution of quantum information and computing. In this paper, we propose a new post-quantum voting scheme based on physical laws by using encrypted no-key protocol to transmit message in the channel, which ensures the post-quantum security. Unlike lattice-based and multivariate-based electronic voting schemes, whose security is based on the computational problems assumption that has not been solved by effective quantum algorithms until now, the security of the voting scheme based on the physical laws is depended on inherent limitations of quantum computers and not influenced by the evolution of new quantum algorithms. In detail, we also rigorously demonstrate that the scheme achieves the post-quantum security and all properties necessary for voting scheme such as the completeness, robustness, privacy, eligibility, unreusability, fairness, and verifiability.

cs.CR↗

The Sound and the Fury: Hiding Communications in Noisy Wireless Networks with Interference Uncertainty

Covert communication can prevent the adversary from knowing that a wireless transmission has occurred. In the additive white Gaussian noise channels, a square root law is obtained and the result shows that Alice can reliably and covertly transmit $\mathcal{O}(\sqrt{n})$ bits to Bob in $n$ channel uses. If additional "friendly" node near the adversary can inject artificial noise to aid Alice in hiding her transmission attempt, covert throughput can be improved, i.e., Alice can covertly transmit $\mathcal{O}(\min\{n,λ^{α/2}\sqrt{n}\})$ bits to Bob over $n$ uses of the channel ($λ$ is the density of friendly nodes and $α$ is the path loss exponent of wireless channels). In this paper, we consider the covert communication in a noisy wireless network, where Bob and the adversary Willie not only experience the background noise, but also the aggregated interference from other transmitters. Our results show that uncertainty in interference experienced by Willie is beneficial to Alice. When the distance between Alice and Willie $d_{a,w}=ω(n^{δ/4})$ ($δ=2/α$ is stability exponent), Alice can reliably and covertly transmit $\mathcal{O}(\log_2\sqrt{n})$ bits to Bob in $n$ channel uses. Although the covert throughput is lower than the square root law and the friendly jamming scheme, the spatial throughput is higher. From the network perspective, the communications are hidden in "the sound and the fury" of noisy wireless networks, and what Willie sees is merely a "shadow" wireless network. He knows for certain that some nodes are transmitting, but he cannot catch anyone red-handed.

cs.IT↗

Room-temperature nanoseconds spin relaxation in WTe2 and MoTe2 thin films

The Weyl semimetal WTe2 and MoTe2 show great potential in generating large spin currents since they possess topologically-protected spin-polarized states and can carry a very large current density. In addition, the intrinsic noncentrosymmetry of WTe2 and MoTe2 endows with a unique property of crystal symmetry-controlled spin-orbit torques. An important question to be answered for developing spintronic devices is how spins relax in WTe2 and MoTe2. Here, we report a room-temperature spin relaxation time of 1.2 ns (0.4 ns) in WTe2 (MoTe2) thin film using the time-resolved Kerr rotation (TRKR). Based on ab initio calculation, we identify a mechanism of long-lived spin polarization resulting from a large spin splitting around the bottom of the conduction band, low electron-hole recombination rate and suppression of backscattering required by time-reversal and lattice symmetry operation. In addition, we find the spin polarization is firmly pinned along the strong internal out-of-plane magnetic field induced by large spin splitting. Our work provides an insight into the physical origin of long-lived spin polarization in Weyl semimetals which could be useful to manipulate spins for a long time at room temperature.

cond-mat.mtrl-sci↗

Interlayer coupling and gate-tunable excitons in transition metal dichalcogenide heterostructures

Bilayer van der Waals (vdW) heterostructures such as MoS2/WS2 and MoSe2/WSe2 have attracted much attention recently, particularly because of their type II band alignments and the formation of interlayer exciton as the lowest-energy excitonic state. In this work, we calculate the electronic and optical properties of such heterostructures with the first-principles GW+Bethe-Salpeter Equation (BSE) method and reveal the important role of interlayer coupling in deciding the excited-state properties, including the band alignment and excitonic properties. Our calculation shows that due to the interlayer coupling, the low energy excitons can be widely tunable by a vertical gate field. In particular, the dipole oscillator strength and radiative lifetime of the lowest energy exciton in these bilayer heterostructures is varied by over an order of magnitude within a practical external gate field. We also build a simple model that captures the essential physics behind this tunability and allows the extension of the ab initio results to a large range of electric fields. Our work clarifies the physical picture of interlayer excitons in bilayer vdW heterostructures and predicts a wide range of gate-tunable excited-state properties of 2D optoelectronic devices.

cond-mat.mes-hall↗

Stark Effect of Doped Two-Dimensional Transition Metal Dichalcogenides

The band gap of two-dimensional (2D) semiconductors can be efficiently tuned by gate electric field, which is so called the Stark effect. We report that doping, which is essential in realistic devices, will substantially change the Stark effect of few-layer transition metal dichalcogenides in unexpected ways. Particularly in bilayer structures, because of the competition between strong quantum confinement and intrinsic screening length, electron and hole dopings exhibit surprisingly different Stark effects: doped electrons actively screen the external field and result in a nonlinear Stark effect; however, doped holes do not effectively screen the external field, causing a linear Stark effect that is the same as that of undoped materials. Our further analysis shows that this unusual doping effect is not limited within transition metal dichalcogenides but general for 2D structures. Therefore, doping plays a much more crucial role in functional 2D devices and this unusual Stark effect also provides a new degree of freedom to tune band gaps and optical properties of 2D materials.

cond-mat.mtrl-sci↗

Renormalization of quasiparticle band gap in doped two-dimensional materials from many-body calculations

Doped free carriers can substantially renormalize electronic self-energy and quasiparticle band gaps of two-dimensional (2D) materials. However, it is still challenging to quantitatively calculate this many-electron effect, particularly at the low doping density that is most relevant to realistic experiments and devices. Here we develop a first-principles-based effective-mass model within the GW approximation and show a dramatic band gap renormalization of a few hundred meV for typical 2D semiconductors. Moreover, we reveal the roles of different many-electron interactions: The Coulomb-hole contribution is dominant for low doping densities while the screened-exchange contribution is dominant for high doping densities. Three prototypical 2D materials are studied by this method, h-BN, MoS2, and black phosphorus, covering insulators to semiconductors. Especially, anisotropic black phosphorus exhibits a surprisingly large band gap renormalization because of its smaller density-of-state that enhances the screened-exchange interactions. Our work demonstrates an efficient way to accurately calculate band gap renormalization and provides quantitative understanding of doping-dependent many-electron physics of general 2D semiconductors.

cond-mat.mes-hall↗

Ligand-field helical luminescence in a 2D ferromagnetic insulator

Bulk chromium triiodide (CrI$_3$) has long been known as a layered van der Waals ferromagnet. However, its monolayer form was only recently isolated and confirmed to be a truly two-dimensional (2D) ferromagnet, providing a new platform for investigating light-matter interactions and magneto-optical phenomena in the atomically thin limit. Here, we report spontaneous circularly polarized photoluminescence in monolayer CrI$_3$ under linearly polarized excitation, with helicity determined by the monolayer magnetization direction. In contrast, the bilayer CrI$_3$ photoluminescence exhibits vanishing circular polarization, supporting the recently uncovered anomalous antiferromagnetic interlayer coupling in CrI$_3$ bilayers. Distinct from the Wannier-Mott excitons that dominate the optical response in well-known 2D van der Waals semiconductors, our absorption and layer-dependent photoluminescence measurements reveal the importance of ligand-field and charge-transfer transitions to the optoelectronic response of atomically thin CrI$_3$. We attribute the photoluminescence to a parity-forbidden d-d transition characteristic of Cr$^{3+}$ complexes, which displays broad linewidth due to strong vibronic coupling and thickness-independent peak energy due to its localized molecular orbital nature.

cond-mat.mes-hall↗

Effects of the temperature and magnetic-field dependent coupling on the properties of QCD matter

To reflect the asymptotic freedom in the thermal direction, a temperature-dependent coupling was proposed in the literature. We investigate its effect on QCD matter with and without strong magnetic fields. Compared with the fixed coupling constant, the running coupling leads to a drastic change in the dynamical quark mass, entropy density, sound velocity, and specific heat. The crossover transition of QCD matter at finite temperature is characterized by the pseudocritical temperature $T_\mathrm{pc}$, which is generally determined by the peak of the derivative of the quark condensate with respect to the temperature $dϕ/dT$, or equivalently, by the derivative of the quark dynamical mass $d M/dT$. In a strong magnetic field, the temperature- and magnetic-field-dependent coupling $G(eB,T)$ was recently introduced to account for inverse magnetic catalysis. We propose an analytical relation between the two criteria $dϕ/dT$ and $dM/dT$ and show a discrepancy between them in finding the pseudocritical temperature. The magnitude of the discrepancy depends on the behavior of $dG/dT$.

hep-ph↗

One-Body Density Matrix and Momentum Distribution of Strongly Interacting One-Dimensional Spinor Quantum Gases

The one-body density matrix (OBDM) of a strongly interacting spinor quantum gas in one dimension can be written as a summation of products of spatial and spin parts. We find that there is a remarkable connection between the spatial part and the OBDM of a spinless hard-core anyon gas. This connection allows us to efficiently calculate the OBDM of the spinor system with particle numbers much larger than what was previously possible. Given the OBDM, we can easily calculate the momentum distribution of the spinor system, which again is related to the momentum distribution of the hard-core ayone gas.

cond-mat.quant-gas↗

Density waves at the interface of a binary complex plasma

Density waves were studied in a phase-separated binary complex plasma under microgravity conditions. For the big particles, waves were self-excited by the two-stream instability, while for small particles, they were excited by heartbeat instability with the presence of reversed propagating pulses of a different frequency. By studying the dynamics of wave crests at the interface, we recognize a "collision zone" and a "merger zone" before and after the interface, respectively. The results provide a generic picture of wave-wave interaction at the interface between two "mediums".

physics.plasm-ph↗

Low-Symmetry Two-Dimensional Materials for Electronic and Photonic Applications

In this review article, we discuss the synthesis, properties, and novel device applications of low-symmetry 2D materials, including black phosphorus and its arsenic alloys, compounds with black-phosphorus like structure such as the monochalcogenides of group IV elements like Ge and Sn, as well as the class of low-symmetry transition metal dichalcogenide (TMDC) materials such as rhenium disulfide (ReS2) and rhenium diselenide (ReSe2). Their unique physical properties resulting from the low symmetry in-plane crystal structure and the prospects of their application in nanoelectronics and nanophotonics, as well as piezoelectric devices and thermoelectrics are discussed.

cond-mat.mtrl-sci↗

Efficient Electrical Control of Thin-Film Black Phosphorus Bandgap

Recently rediscovered black phosphorus is a layered semiconductor with promising electronic and photonic properties. Dynamic control of its bandgap can enable novel device applications and allow for the exploration of new physical phenomena. However, theoretical investigations and photoemission spectroscopy experiments performed on doped black phosphorus through potassium adsorption indicate that in its few-layer form, an exceedingly large electric field in the order of several volts per nanometer is required to effectively tune its bandgap, making the direct electrical control unfeasible. Here we demonstrate the tuning of bandgap in intrinsic black phosphorus using an electric field directly and reveal the unique thickness-dependent bandgap tuning properties, arising from the strong interlayer electronic-state coupling. Furthermore, leveraging a 10-nm-thick black phosphorus in which the field-induced potential difference across the film dominates over the interlayer coupling, we continuously tune its bandgap from ~300 to below 50 milli-electron volts, using a moderate displacement field up to 1.1 volts per nanometer. Such dynamic tuning of bandgap may not only extend the operational wavelength range of tunable black phosphorus photonic devices, but also pave the way for the investigation of electrically tunable topological insulators and topological nodal semimetals.

cond-mat.mes-hall↗