arXiv subjects

L. Klein

Publications and source records attributed to L. Klein.

8 recordsLinked to original sources

arXiv2011

Field-dependent anisotropic magnetoresistance and planar Hall effect in epitaxial magnetite thin films

A systematic study of the temperature and magnetic field dependence of the longitudinal and transverse resistivities of epitaxial thin films of magnetite (Fe3O4) is reported. The anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) are sensitive to the in-plane orientation of current and magnetization with respect to crystal axes in a way consistent with the cubic symmetry of the system. We also show that the AMR exhibit sign reversal as a function of temperature, and that it shows significant field dependence without saturation up to 9 T. Our results provide a unified description of the anisotropic magnetoresistance effects in epitaxial magnetite films and illustrate the need for a full determination of the resistivity tensor in crystalline systems.

cond-mat.str-el↗

arXiv2008

The magnetoresistance tensor of La(0.8)Sr(0.2)MnO(3)

We measure the temperature dependence of the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in c-axis oriented epitaxial thin films of La(0.8)Sr(0.2)MnO(3), for different current directions relative to the crystal axes, and show that both AMR and PHE depend strongly on current orientation. We determine a magnetoresistance tensor, extracted to 4th order, which reflects the crystal symmetry and provides a comprehensive description of the data. We extend the applicability of the extracted tensor by determining the bi-axial magnetocrystalline anisotropy in our samples.

cond-mat.mtrl-sci↗

arXiv2005

Planar Hall Effect MRAM

We suggest a new type of magnetic random access memory (MRAM) that is based on the phenomenon of the planar Hall effect (PHE) in magnetic films, and we demonstrate this idea with manganite films. The PHE-MRAM is structurally simpler than currently developed MRAM that is based on magnetoresistance tunnel junctions (MTJ), with the tunnel junction structure being replaced by a single layer film.

cond-mat.mtrl-sci↗

arXiv2004

Suppression of the superconducting critical current of Nb in bilayers of Nb/SrRuO3

In bilayers consisting of ferromagnetic and superconducting films, the ferromagnetic film in its domain state induces inhomogeneous distribution of magnetic fields in the superconducting film. When the ferromagnetic film has bubble magnetic domains in a labyrinth structure, it has been found that the pinning of the vortices increases; hence, the critical current of the superconducting film becomes larger. Here we study the effect of parallel ferromagnetic domain structure in Nb/SrRuO3 on the critical current of Nb with current flowing perpendicularly to the domains and find that in this case the ferromagnetic domain structure decreases the critical current.

cond-mat.supr-con↗

arXiv2004

Giant planar Hall effect in colossal magnetoresistive La(0.84)Sr(0.16)MnO(3) thin films

The transverse resistivity in thin films of La(0.84)Sr(0.16)MnO(3) (LSMO)exhibits sharp field-symmetric jumps below Tc. We show that a likely source of this behavior is the giant planar Hall effect (GPHE) combined with biaxial magnetic anisotropy. The effect is comparable in magnitude to that observed recently in the magnetic semiconductor Ga(Mn)As. It can be potentially used in applications such as magnetic sensors and non-volatile memory devices.

cond-mat.other↗

arXiv2000

Deviations from Matthiessen's Rule for ${\rm SrRuO_3}$ and ${\rm CaRuO_3}$

We have measured the change in the resistivity of thin films of ${\rm SrRuO_3}$ and ${\rm CaRuO_3}$ upon introducing point defects by electron irradiation at low temperatures, and we find significant deviations from Matthiessen's rule. For a fixed irradiation dose, the induced change in resistivity {\it decreases} with increasing temperature. Moreover, for a fixed temperature, the increase in resistivity with irradiation is found to be {\it sublinear}. We suggest that the observed behavior is due to the marked anisotropic scattering of the electrons together with their relatively short mean free path (both characteristic of many metallic oxides including cuprates) which amplify effects related to the Pippard ineffectiveness condition.

cond-mat.str-el↗

arXiv1999

Observation of domain wall resistivity in $\rm SrRuO_3$

$\rm SrRuO_3$ is an itinerant ferromagnet with $T_c \sim 150 \rm K$. When $\rm SrRuO_3$ is cooled through $T_c$ in zero applied magnetic field, a stripe domain structure appears whose orientation is uniquely determined by the large uniaxial magnetocrystalline anisotropy. We find that the ferromagnetic domain walls clearly enhance the resisitivity of $\rm SrRuO_3$ and that the enhancement has different temperature dependence for currents parallel and perpendicular to the domain walls. We discuss possible interpretations of our results.

cond-mat.str-el↗

arXiv1998

Non-Fermi liquid behavior of SrRuO_3 -- evidence from infrared conductivity

The reflectivity of the itinerant ferromagnet SrRuO_3 has been measured between 50 and 25,000 cm-1 at temperatures ranging from 40 to 300 K, and used to obtain conductivity, scattering rate, and effective mass as a function of frequency and temperature. We find that at low temperatures the conductivity falls unusually slowly as a function of frequency (proportional to ω^{-1/2}), and at high temperatures it even appears to increase as a function of frequency in the far-infrared limit. The data suggest that the charge dynamics of SrRuO_3 are substantially different from those of Fermi-liquid metals.

cond-mat.str-el↗