Non-magnetic spin generation in $n$-doped GaAs quantum wells
This paper has been withdrawn by the authors.
cond-mat.mtrl-sci↗
arXiv subjects
L. Jiang
Publications and source records attributed to L. Jiang.
Hot-electron effect in spin dephasing in $n$-type GaAs quantum wells
We perform a study of the effect of the high in-plane electric field on the spin precession and spin dephasing due to the D'yakonov-Perel' mechanism in $n$-type GaAs (100) quantum wells by constructing and numerically solving the kinetic Bloch equations. We self-consistently include all of the scattering such as electron-phonon, electron-non-magnetic impurity as well as the electron-electron Coulomb scattering in our theory and systematically investigate how the spin precession and spin dephasing are affected by the high electric field under various conditions. The hot-electron distribution functions and the spin correlations are calculated rigorously in our theory. It is found that the D'yakonov-Perel' term in the electric field provides a non-vanishing effective magnetic field that alters the spin precession period. Moreover, spin dephasing is markedly affected by the electric field. The important contribution of the electron-electron scattering to the spin dephasing is also discussed.
cond-mat.other↗
Study of the formation and decay of electron-hole plasma clusters in a direct-gap semiconductor CuCl
The master equation for the cluster-size distribution function is solved numerically to investigate the electron-hole droplet formation claimed to be discovered in the direct-gap CuCl excited by picosecond laser pulses [Nagai {\em et al.}, Phys. Rev. Lett. {\bf 86}, 5795 (2001); J. Lumin. {\bf 100}, 233 (2002)]. Our result shows that for the excitation in the experiment, the average number of pairs per cluster (ANPC) is only around 5.2, much smaller than that (10$^6$ typically for Ge) of the well studied electron-hole droplet in indirect-gap semiconductors such as Ge and Si.
cond-mat↗