arXiv subjects

L. Cheng

Publications and source records attributed to L. Cheng.

At least 19 recordsLinked to original sources

arXiv2026

Neutrino NSI in archaeological Pb

Dark matter direct detection experiments can observe solar neutrinos via coherent elastic neutrino-nucleus scattering, making it possible to test new physics in the neutrino sector. In this article, we study the sensitivity of RES-NOVA, a novel cryogenic calorimetric experiment employing PbWO$_4$ crystals grown from archaeological lead, to neutrino non-standard interactions (NSI). We perform a sensitivity study for a benchmark setup with a nominal energy threshold of 1 keV and an exposure of 1 ton$\cdot$y, both for a conservative (only heat readout) and ideal (heat and scintillation) background rejection scenario. We find that, in its nominal configuration, while not being sensitive to Standard Model solar $\nu$ interactions, RES-NOVA can reach sensitivities to NSI at the level of current global fits. With moderate or significant improvements of the threshold down to $0.5$ keV and $0.2$ keV, RES-NOVA will be able to achieve sensitivities beyond NSI global fit results, testing new areas of the parameter space in the electron and tau sectors, $\varepsilon_{ee}$, $\varepsilon_{\tau\tau}$, and $\varepsilon_{e\tau}$. A similar improvement in sensitivities is expected when instead increasing the exposure to 10 ton$\cdot$y.

hep-ph↗

arXiv2025

Competing Lattice and Defect Dynamics Govern Terahertz-Induced Ferroelectricity in Quantum Paraelectric SrTiO$_3$

Intense terahertz (THz) pulses induce transient inversion-symmetry breaking in quantum paraelectric SrTiO$_3$, yet the underlying mechanism remains controversial. Using fields up to $\sim$1.1 MV/cm, we reveal spatially inhomogeneous THz-field-induced second harmonic generation (TFISH) governed by competing lattice and defect dynamics. Short-lived coherent antiferrodistortive (AFD) modes suppress dipole correlations within $\sim$5 ps, while heavily damped soft/AFD modes and a defect-induced low-frequency mode ($\sim$0.1-0.3 THz) jointly prevent long-range ferroelectric coherence in oxygen-vacancy-rich regions. Collective modes manifested by oscillatory TFISH components exhibit softening followed by hardening below a critical temperature $T^*\simeq$28 K, confirming transient ferroelectric order where defects are sparse. These results reconcile conflicting interpretations, establish defect-mediated competition as a central regulator of light-induced ferroelectricity, and open routes to ultrafast control of quantum materials.

cond-mat.mtrl-sci↗

arXiv2025

Low voltage graphene interface engineered organic ferroelectric tunnel junction devices

It has been indicated that the path forward for the widespread usage of ferroelectric (FE) materials may be considerably facilitated through the reduction of programming voltages to on-chip logic compatible values of < 1 V. Obstacles involve issues related to the scaling of the FEs to lower thickness as well as the presence of an interfacial layer (IL) between the high permittivity FE and the substrate -- resulting in wasted voltage across the IL. Here, we show how lower operating voltages along with a higher tunneling electroresistance (TER) could be achieved through IL engineering. We use piezoresponse force microscopy and fabricated ferroelectric tunnel junctions (FTJs) to show that ultra-thin FE films deposited on single layer graphene can exhibit polarization switching at ~ 0.8 V with significant TER.

physics.app-ph↗

arXiv2022

Regulating electron diffraction direction with cylindrically symmetric rotating crystal

We report a promising InSiO film that allows simultaneous observation of sample morphology and Kikuchi patterns in raster scan mode of scanning electron microscopy. This new experimental observation suggests potential mechanism beyond existing diffraction theories. We find by simulation that this material has a novel cylindrically symmetric rotational crystalline structure that can control the diffraction direction of electrons through a specific rotational distribution of crystal planes, while being independent of the angle and energy of incident electrons within a certain range.

cond-mat.mtrl-sci↗

arXiv2021

Extremely low-energy collective modes in a quasi-one-dimensional system

We have investigated the quasiparticle dynamics and collective excitations in the quasi-one-dimensional material ZrTe$_5$ using ultrafast optical pump-probe spectroscopy. Our time-domain results reveal two coherent oscillations having extremely low energies of $\hbar\omega_1\sim$0.33 meV (0.08 THz) and $\hbar\omega_2\sim$1.9 meV (0.45 THz), which are softened as the temperature approaches two different critical temperatures ($\sim$54 K and $\sim$135 K). We attribute these two collective excitations to the amplitude mode of charge density wave instabilities in ZrTe$_5$ with tremendously small nesting wave vectors. Furthermore, scattering with the $\hbar\omega_2$ mode may result in a peculiar quasiparticle decay process with a timescale of $\sim$1-2 ps below the transition temperature $T^*$ ($\sim$135 K). Our findings provide pivotal information for studying the fluctuating order parameters and their associated quasiparticle dynamics in various low-dimensional topological systems and other materials.

cond-mat.mtrl-sci↗

arXiv2017

First-principles study of the effects of electron-phonon coupling on the thermoelectric properties: a case study of SiGe compound

It is generally assumed in the thermoelectric community that the lattice thermal conductivity of a given material is independent of the electronic properties. This perspective is however questionable since the electron-phonon coupling could have certain effects on both the carrier and phonon transport, which in turn will affect the thermoelectric properties. Using SiGe compound as a prototypical example, we give an accurate prediction of the carrier relaxation time by considering scattering from all the phonon modes, as opposed to the simple deformation potential theory. It is found that the carrier relaxation time does not change much with the concentration, which is however not the case for the phonon transport where the lattice thermal conductivity can be significantly reduced by electron-phonon coupling at higher carrier concentration. As a consequence, the figure-of-merit of SiGe compound is obviously enhanced at optimized carrier concentration, and becomes more pronounced at elevated temperature.

cond-mat.mtrl-sci↗

arXiv2016

Effects of topological edge states on the thermoelectric properties of Bi nanoribbons

Using first-principles calculations combined with Boltzmann transport theory, we investigate the effects of topological edge states on the thermoelectric properties of Bi nanoribbons. It is found that there is a competition between the edge and bulk contributions to the Seebeck coefficients. However, the electronic transport of the system is dominated by the edge states because of its much larger electrical conductivity. As a consequence, a room temperature value exceeding 3.0 could be achieved for both p- and n-type systems when the relaxation time ratio between the edge and the bulk states is tuned to be 1000. Our theoretical study suggests that the utilization of topological edge states might be a promising approach to cross the threshold of the industrial application of thermoelectricity.

cond-mat.mtrl-sci↗

arXiv2016

Understanding the electronic and phonon transport properties of thermoelectric material BiCuSeO: a first-principles study

Using first-principles pseudopotential method and Boltzmann transport theory, we give a comprehensive understanding of the electronic and phonon transport properties of thermoelectric material BiCuSeO. By choosing proper hybrid functional for the exchange-correlation energy, we find that the system is semiconducting with a direct band gap of ~0.8 eV, which is quite different from those obtained previously using standard functionals. Detailed analysis of a three-dimensional energy band structure indicates that there is a valley degeneracy of eight around the valence band maximum, which leads to a sharp density of states and is responsible for a large p-type Seebeck coefficient. Moreover, we find that the density of states effective masses are much larger and results in very low hole mobility of BiCuSeO. On the other hand, we find larger atomic displacement parameters for the Cu atoms, which indicates that the stronger anharmonicity of BiCuSeO may originate from the rattling behavior of Cu instead of previously believed Bi atoms.

cond-mat.mtrl-sci↗

arXiv2016

Thermoelectric properties of graphyne from first-principles calculations

The two-dimensional graphene-like carbon allotrope, graphyne, has been recently fabricated and exhibits many interesting electronic properties. In this work, we investigate the thermoelectric properties of {\gamma}-graphyne by performing first-principles calculations combined with Boltzmann transport theory for both electron and phonon. The carrier relaxation time is accurately evaluated from the ultra-dense electron-phonon coupling matrix elements calculated by adopting the density functional perturbation theory and Wannier interpolation, rather than the generally used deformation potential theory which only considers the electron-acoustic phonon scattering. It is found that the thermoelectric performance of {\gamma}-graphyne exhibits a strong dependence on the temperature and carrier type. At an intermediate temperature of 600 K, a maximum ZT value of 1.5 and 1.0 can be achieved for the p- and n-type systems, respectively.

cond-mat.mes-hall↗

arXiv2016

The rhombohedral Sb2Se3 is also an intrinsic topological insulator

Topological insulators are new class of quantum materials, which have insulating energy gaps in bulk, but exhibit gapless edge states or surface states that are protected by time-reversal symmetry at boundary. It was theoretically predicted and experimentally confirmed that the binary tetradymites Bi2Te3, Bi2Se3, and Sb2Te3 are three-dimensional topological insulators. In this work, we demonstrate by first-principles approach that the ignored Sb2Se3, although with relatively smaller spin-orbital coupling strength, can also exhibit topologically protected surface states with a bulk gap of 0.19 eV, as long as the van der Waals interaction is explicitly included in the calculations. Detailed analysis of the band structures of Sb2Se3 thin films indicates that the non-trivial surface state appears at a critical thickness of six quintuple layers.

cond-mat.mes-hall↗

arXiv2016

Molecular dynamics simulations of the lattice thermal conductivity of CuInTe2

The lattice thermal conductivity of thermoelectric material CuInTe2 is predicted using classical molecular dynamics simulations, where a simple but effective Morse-type interatomic potential is constructed by fitting first-principles total energy calculations. In a broad temperature range from 300 to 900 K, our simulated results agree well with those measured experimentally, as well as those obtained from phonon Boltzmann transport equation. By introducing the Cd impurity and Cu vacancy, the thermal conductivity of CuInTe2 can be effectively reduced to further enhance the thermoelectric performance of this chalcopyrite compound.

cond-mat.mtrl-sci↗

arXiv2016

Moderate deviations for a stochastic wave equation in dimension three

In this paper, we proved a central limit theorem and established a moderate deviation principle for a perturbed stochastic wave equation defined on $[0,T]\times \rr^3$. This equation is driven by a Gaussian noise, white in time and correlated in space. The weak convergence approach plays an important role.

math.PR↗

arXiv2016

Predicting the optimized thermoelectric performance of MgAgSb

Using first-principles method and Boltzmann theory, we provide an accurate prediction of the electronic band structure and thermoelectric transport properties of alpha-MgAgSb. Our calculations demonstrate that only when an appropriate exchange-correlation functional is chosen can we correctly reproduce the semiconducting nature of this compound. By fine tuning the carrier concentration, the thermoelectric performance of alpha-MgAgSb can be significantly optimized, which exhibits a strong temperature dependence and gives a maximum ZT value of 1.7 at 550 K.

cond-mat.mtrl-sci↗

arXiv2016

LaPtSb: a half-Heusler compound with high thermoelectric performance

The electronic and transport properties of the half-Heusler compound LaPtSb are investigated by performing first-principles calculations combined with semi-classical Boltzmann theory and deformation potential theory. Compared with many typical half-Heusler compounds, the LaPtSb exhibits obviously larger power factor at room temperature, especially for the n-type system. Together with the very low lattice thermal conductivity, the thermoelectric figure of merit (ZT) of LaPtSb can be optimized to a record high value of 2.2 by fine tuning the carrier concentration.

cond-mat.mtrl-sci↗

arXiv2016

Thermal conductivities of phosphorene allotropes from first-principle calculations: a comparative study

Phosphorene has attracted tremendous interest recently due to its intriguing electronic properties. However, the thermal transport properties of phosphorene, especially for its allotropes, are still not well-understood. In this work, we calculate the thermal conductivities of five phosphorene allotropes ({\alpha}-, \b{eta}-, {\gamma}-, {\delta}- and {\zeta}-phase) by using phonon Boltzmann transport theory combined with first-principles calculations. It is found that the {\alpha}-phosphorene exhibits considerable anisotropic thermal transport, while it is less obvious in the other four phosphorene allotropes. The highest thermal conductivity is found in the \b{eta}-phosphorene, followed by {\delta}-, {\gamma}- and {\zeta}-phase. The much lower thermal conductivity of the {\zeta}-phase can be attributed to its relatively complex atomic configuration. It is expected that the rich thermal transport properties of phosphorene allotropes can have potential applications in the thermoelectrics and thermal management.

cond-mat.mes-hall↗

arXiv2015

High thermoelectric performance of distorted Bismuth (110) layer

The thermoelectric properties of distorted bismuth (110) layer are investigated using first-principles calculations combined with the Boltzmann transport equation for both electrons and phonons. To accurately predict the electronic and transport properties, the quasiparticle corrections with the GW approximation of many-body effects have been explicitly included. It is found that a maximum ZT value of 6.4 can be achieved for n-type system, which is essentially stemmed from the weak scattering of electrons. Moreover, we demonstrate that the distorted Bi layer remains high ZT values at relatively broad regions of both temperature and carrier concentration. Our theoretical work emphasizes that the deformation potential constant characterizing the electron-phonon scattering strength is an important paradigm for searching high thermoelectric performance materials.

cond-mat.mes-hall↗

arXiv2015

High thermoelectric performance can be achieved in black phosphorus

Few-layer black phosphorus has recently emerged as a promising candidate for novel electronic and optoelectronic device. Here we demonstrate by first-principles calculations and Boltzmann theory that, black phosphorus could also have potential thermoelectric applications and a fair ZT value of 1.1 can be achieved at elevated temperature. Moreover, such value can be further increased to 5.4 by substituting P atom with Sb atom, giving nominal formula of P0.75Sb0.25. Our theoretical work suggests that high thermoelectric performance can be achieved without using complicated crystal structure or seeking for low-dimensional systems.

cond-mat.mtrl-sci↗

arXiv2015

Tuning the carrier concentration to improve the thermoelectric performance of CuInTe2 compound

The electronic and transport properties of CuInTe2 chalcopyrite are investigated using density functional calculations combined with Boltzmann theory. The band gap predicted from hybrid functional is 0.92 eV, which agrees well with experimental data and leads to relatively larger Seebeck coefficient compared with those of narrow-gap thermoelectric materials. By fine tuning the carrier concentration, the electrical conductivity and power factor of the system can be significantly optimized. Together with the inherent low thermal conductivity, the ZT values of CuInTe2 compound can be enhanced to as high as 1.72 at 850 K, which is obviously larger than those measured experimentally and suggests there is still room to improve the thermoelectric performance of this chalcopyrite compound.

cond-mat.mtrl-sci↗