arXiv subjects

Koushik Das

Publications and source records attributed to Koushik Das.

3 recordsLinked to original sources

arXiv2026

Odd diffusion and power-law correlations in chiral mass-transport processes

We study mass-conserving Markov jump processes on a square lattice, where masses hop with a preferred rotational sense, thus breaking both time-reversal and mirror symmetries. We consider closed systems with both periodic and open (reflecting) boundaries, the latter supporting a steady-state edge current. We show that odd diffusion, arising from the chiral transport, generically provides a mechanism for the emergence of scale-invariant two-point density correlations in nonequilibrium steady states even in the presence of lattice rotation symmetry -- a mechanism that is qualitatively distinct from the well-known mechanism of anisotropic hopping. We exactly calculate the steady-state equal-time density-density correlations, which exhibit an algebraic decay, $C(\mathbf{r}) \sim |\mathbf{r}|^{-4}$ for $|\mathbf{r}| \gg 1$. This algebraic behavior results from the interplay between the off-diagonal components of the diffusion and mobility tensors, demonstrating that chiral transport alone can generate power-law correlations in isotropic driven systems. Remarkably, the structure factor in the zero-wavenumber limit and the amplitude of the power laws depend nontrivially on chirality. While increasing chirality initially suppresses large-scale density fluctuations, the fluctuations beyond a threshold odd-diffusion strength vary nonmonotonically with chirality and develop a cusp singularity.

cond-mat.stat-mech↗

arXiv2025

Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors

For high-electron-mobility transistors based on two-dimensional electron gas (2DEG) within a quantum well, such as those based on AlGaN/GaN heterostructure, a Schottky-gate is used to maximize the amount of charge that can be induced and thereby the current that can be achieved. However, the Schottky-gate also leads to very high leakage current through the gate electrode. Adding a conventional dielectric layer between the nitride layers and gate metal can reduce leakage; but this comes at the price of a reduced drain current. Here, we used a ferroic HfO2-ZrO2 bilayer as the gate dielectric and achieved a simultaneous increase in the ON current and decrease in the leakage current, a combination otherwise not attainable with conventional dielectrics. This approach surpasses the conventional limits of Schottky GaN transistors and provides a new pathway to improve performance in transistors based on 2DEG.

cond-mat.mtrl-sci↗

arXiv2025

Colossal enhancement of spin transmission through magnon confinement in an antiferromagnet

Since Felix Bloch's introduction of the concept of spin waves in 1930, magnons (the quanta of spin waves) have been extensively studied in a range of materials for spintronics, particularly for non-volatile logic-in-memory devices. Controlling magnons in conventional antiferromagnets and harnessing them in practical applications, however, remains a challenge. In this letter, we demonstrate highly efficient magnon transport in an LaFeO$_3$/BiFeO$_3$/LaFeO$_3$ all-antiferromagnetic system which can be controlled electrically, making it highly desirable for energy-efficient computation. Leveraging spin-orbit-driven spin-charge transduction, we demonstrate that this material architecture permits magnon confinement in ultrathin antiferromagnets, enhancing the output voltage generated by magnon transport by several orders of magnitude, which provides a pathway to enable magnetoelectric memory and logic functionalities. Additionally, its non-volatility enables ultralow-power logic-in-memory processing, where magnonic devices can be efficiently reconfigured via electrically controlled magnon spin currents within magnetoelectric channels.

cond-mat.mtrl-sci↗