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Kewen Shi

Publications and source records attributed to Kewen Shi.

9 recordsLinked to original sources

Nonlinearity Modulation of Auto-oscillations in Three-terminal Magnetic Tunnel Junctions

Spin torque nano-oscillators (STNOs) hold encouraging promise for nanoscale microwave generators, modulators, and new types of intelligent computing. The nonlinearity, describing the current-induced tunability of oscillating frequency, is a distinctive feature of STNOs, which plays important roles in efficient manipulation of microwave frequencies, rapid spec-trum analysis, and the design of neuromorphic devices. However, experimental research on its efficient modulation remains limited. Here, we comprehensively studied the impact of several factors on nonlinearity in nanoscale three-terminal MTJ-STNOs, including the external magnetic field, the thickness of CoFeB free layer, and the combination of spin-transfer torque (STT) and spin-orbit torque (SOT). Among these factors, nonlinearity can be significantly tuned by the direction of magnetic field as well as the thickness of CoFeB free layer. Notably, it reaches zero in 1.1 nm CoFeB, where the oscillation frequency is not affected by the drive current. Such property provides a more intrinsic and robust approach to achieve zero nonlinearity in STNOs, which is advantageous for high-quality microwave generators. More importantly, we found that nonlinearity can also be electrically modulated by both STT and SOT currents, and develop a refined model that accounts for the additional contribution of the SOT current to explain the mechanism. This electrical approach is more convenient, energy-efficient, and well-suited for miniaturization. Our findings offer a comprehensive understanding and open up a new dimension for the current tunability of nonlinearity in MTJ-STNOs, benefiting further optimization in nanoscale STNO-based microwave generators and neuromorphic computing devices.

physics.app-ph

Geometric Asymmetry-Enhanced Nonreciprocal Supercurrent Transport Revealed by Second-Harmonic Response

Nonreciprocal transport in superconducting systems serves as a powerful probe of symmetry-breaking mechanisms, with the superconducting diode effect emerging as a key manifestation enabling cryogenic rectification. While theoretical models have extensively explored superconducting nonreciprocity, experimental verification remains challenging, as conventional transport measurements struggle to disentangle intrinsic and extrinsic contributions. Nonlinear transport analysis, particularly second-harmonic response, offers an alternative approach by providing a sensitive probe for detecting spatial inversion symmetry breaking in the presence of time-reversal symmetry violation. Here, we systematically investigate the influence of geometric symmetry on nonreciprocal transport by comparing two triangular-extended Hall bar configurations with a symmetric Hall bar control. Second-harmonic nonlinear transport measurements reveal that the triangular extension significantly enhances nonreciprocal response, exhibiting a clear dependence on the base angle of the extension. These findings establish a direct connection between mesoscopic geometry and macroscopic nonreciprocity, demonstrating how spatial symmetry and vortex dynamics govern nonlinear transport. This insight offers a guiding principle for designing superconducting rectification architectures.

cond-mat.supr-con

Anatomy of Thermally Interplayed Spin-Orbit Torque Driven Antiferromagnetic Switching

Current-induced antiferromagnetic (AFM) switching remains critical in spintronics, yet the interplay between thermal effects and spin torques still lacks clear clarification. Here we experimentally investigate the thermally interplayed spin-orbit torque induced AFM switching in magnetic tunnel junctions via pulse-width dependent reversal and time-resolved measurements. By introducing the Langevin random field into the AFM precession equation, we establish a novel AFM switching model that anatomically explains the experimental observations. Our findings elucidate the currentinduced AFM switching mechanism and offer significant promise for advancements in spintronics.

cond-mat.mes-hall

NAND-like SOT-MRAM-based Approximate Storage for Error-Tolerant Applications

We demonstrate approximate storage based on NAND-like spin-orbit torque (SOT) MRAM, through "device-modeling-architecture" explorations. We experimentally achieve down to 1E-5 level selectivity. Selectivity and low-power solutions are established by numerical calculation workflow. System-level power consumption is evaluated in the 512 KB last-level cache according to 5 quality levels. Error-tolerant applications, such as image processing, alleviate the demand for selectivity down to the 5E-2 level, leading to 54% ~ 61% energy-saving. Our proposal paves the novel and suitable path for high-density and low-power NAND-like SOT-MRAM.

physics.app-ph

Current manipulation of Giant tunneling altermagnetic resistance in collinear Antiferromagnetic RuO2/MgO/RuO2 sandwich structure

As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consumption and radiation tolerance. Conventional MRAM utilizes magnetic tunnel junctions (MTJs), which consist of two ferromagnetic layers separated by an insulating tunnel barrier. The orientation of the magnetic layers represents the binary data (0 or 1), and electrical resistance changes depending on the relative orientation of these magnetic layers. Despite these advancements, the quest for a swifter, more stable magneto-resistive random-access memory paradigm persists. In this vein, we present a groundbreaking development: room-temperature antiferromagnetic tunnel junctions devoid of any net magnetic moment. Over 200% tunneling altermagnetic resistance (TAR) ratio was measured at RuO2 (110)/MgO/RuO2 (110)/W structure, which is achieved by changing the antiferromagnetic Neel vector of RuO2 with an ultralow current density 2 MA*cm-2.

physics.app-ph

Spin-flop magnetoresistance in a collinear antiferromagnetic tunnel junction

Collinear antiferromagnetic (AFM) materials have unique promise of no stray fields, display ultrafast dynamics, and being robust against perturbation filed which motivates the extensive research of antiferromagnetic spintronics. However, the manipulation and detection of antiferromagnetic order remain formidable challenges. Here, we report the electrical detection of colinear antiferromagnetism in all-epitaxial RuO2/MgO/RuO2 three-terminal tunnel junctions (TJ) using spin-flop tunnel anisotropy magnetoresistance (TAMR). We measured a TAMR ratio of around 60% at room temperature, which arises between the parallel and perpendicular configurations of the adjacent collinear AFM state. Furthermore, we carried out angular dependent measurements using this AFM-TJ and showed that the magnitude of anisotropic longitudinal magnetoresistance in the AFM-TJ can be controlled by the direction of magnetic field. We also theoretically found that the colinear antiferromagnetic MTJ may produce a substantially large TAMR ratio as a result of the time-reversal, strong spin orbit coupling (SOC) characteristic of antiferromagnetic RuO2. Our work not only propels antiferromagnetic materials to the forefront of spintronic device innovation but also unveils a novel paradigm for electrically governed antiferromagnetic spintronics, auguring transformative advancements in high-speed, low-energy information devices.

physics.app-ph

High-Entropy Enhanced Negative Thermal Expansion Perfomance in Antiperovkites

The negative thermal expansion (NTE) materials, which can act as thermal-expansion compensators to counteract the positive thermal expansion, have great applications merit in precision engineering. However, the exploration of NTE behavior with a wide temperature range has reached its upper ceiling through traditional doping strategies due to composition limitations. The unique sluggish characteristic in phase transition and extended optimization space in recent high entropy systems has great potential to broaden the temperature range in electronic transitions-induced NTE materials. Mn-based anti-perovskites offer an ideal platform for the exploration of high entropy NTE material due to their abundant element selection and controllable NTE performance. In this paper, the high entropy strategy is first introduced to broaden the NTE temperature range by relaxing the abrupt phase transition in Mn-based anti-perovskite nitride. We propose an empirical screening method to synthesize the high-entropy anti-perovskite (HEAP). it is found that magnetic phase separation from anti-ferromagnetic CII to paramagnetic CI surviving in an ultra-wide temperature range of 5K<=T<=350K (Delta_T=345K), revealing a unique sluggish characteristic. Consequently, a remarkable NTE behavior (up to Delta_T=235K, 5K<=T<=240K) with a coefficient of thermal expansion of -4.7x10-6/K, has been obtained in HEAP. It is worth noting that the temperature range is two/three times wider than that of low-entropy systems. The sluggish characteristic has been further experimentally proved to come from disturbed phase transition dynamics due to distortion in atomic spacing and chemical environmental fluctuation observed by the spherical aberration-corrected electron microscope. Our demonstration provides a unique paradigm for broadening the temperature range of NTE materials induced by phase transition through entropy engineering.

cond-mat.mtrl-sci

Observation of Magnetic Droplets in Magnetic Tunnel Junctions

Magnetic droplets, a class of highly non-linear magnetodynamical solitons, can be nucleated and stabilized in nanocontact spin-torque nano-oscillators where they greatly increase the microwave output power. Here, we experimentally demonstrate magnetic droplets in magnetic tunnel junctions (MTJs). The droplet nucleation is accompanied by a power increase of over 300 times compared to its ferromagnetic resonance modes. The nucleation and stabilization of droplets are ascribed to the double-CoFeB free layer structure in the all-perpendicular MTJ which provides a low Zhang-Li torque and a high pinning field. Our results enable better electrical sensitivity in the fundamental studies of droplets and show that the droplets can be utilized in MTJ-based applications.

physics.app-ph

Modulation of field-like spin orbit torque in heavy metal / ferromagnet heterostructure

Recent studies rediscovered the crucial role of field-like spin orbit torque (SOT) in nanosecond-timescale SOT dynamics. However, there is not yet an effective way to control its relative amplitude. Here, we experimentally modulate the field-like SOT in W/CoFeB/MgO trilayers through tuning the interfacial spin accumulation. By performing spin Hall magnetoresistance measurement, we find that the CoFeB with enhanced spin dephasing, either generated from larger layer thickness or from proper annealing, can distinctly boost the spin absorption and enhance the interfacial spin mixing conductance G_r. While the damping-like torque efficiency increases with G_r, the field-like torque efficiency turns out to decrease with it. The results suggest that the interfacial spin accumulation, which largely contributes to a field-like torque, is reduced by higher interfacial spin transparency. Our work shows a new path to further improve the performance of SOT-based magnetic devices.

cond-mat.mes-hall