arXiv subjects

Kevin Ye

Publications and source records attributed to Kevin Ye.

11 recordsLinked to original sources

arXiv2026

Anion Ordering and Phase Stability Govern Optical Band Gaps in BaZr(S,Se)3

Chalcogenide perovskites have emerged as promising lead free materials for photovoltaic and thermoelectric applications. Among them, BaZrS3 has attracted particular attention due to its thermal and chemical stability, favorable optoelectronic properties, and low thermal conductivity. Here, we combine molecular dynamics and Monte Carlo simulations based on machine learned interatomic potentials with scanning transmission electron microscopy to investigate mixing thermodynamics and phase stability in the BaZr(S,Se)3 system. We identify an unusual ordered structure that persists at room temperature, most prominently at 33% S, where S and Se atoms form alternating layers within the crystal. Free energy calculations yield the temperature composition phase diagram, including a nonperovskite delta phase in the Se rich limit and a perovskite phase in the S rich limit, separated by a broad two phase region. Analysis of the dielectric function and the absorption coefficient demonstrates that composition, crystal structure, and anion ordering jointly control the optical band gap. Selenium alloying enables tuning between approximately 1.6 and 1.9eV, while anion ordering within a given composition reduces the gap by about 0.12eV. Lastly, variations between structural polymorphs give rise to band gap differences of up to 0.4eV.

cond-mat.mtrl-sci↗

arXiv2025

Understanding How University Guidelines Address Privacy and Security Issues of Generative AI in Academic Settings

Generative artificial intelligence (GenAI) is transforming the educational landscape by augmenting learning paradigms. However, state-of-the-art GenAI systems driving this transformation are predominantly developed and controlled by a small number of private companies; there is little clarity about their data retention practices and limited user control over inputs and outputs. In the context of education, end-users lack the awareness of how to safely adopt GenAI in learning. This raises significant concerns, particularly when proprietary or personally identifiable educational information may be shared with external GenAI platforms. In response to these concerns, universities are developing their own usage guidelines and policies to balance innovation with academic integrity, privacy, and security. Our research seeks to understand these emerging guidelines, with a particular focus on the privacy and security implications of integrating GenAI tools into academic environments - an area that has received little attention to date. We conducted an in-depth qualitative analysis of GenAI-usage guidelines from 43 universities across 12 countries. Our findings reveal several key challenges, including barriers faced by universities in deploying privacy measures and adopting existing security frameworks. These insights lay the groundwork for designing more robust, privacy-aware GenAI guidelines for higher education.

cs.HC↗

arXiv2025

Towards Atomic-Scale Control over Structural Modulations in Quasi-1D Chalcogenides for Colossal Optical Anisotropy

Optically anisotropic materials are sought after for tailoring the polarization of light. Recently, colossal optical anisotropy was reported in a quasi-one-dimensional chalcogenide, Sr1.125TiS3. Compared to SrTiS3, the excess Sr in Sr1.125TiS3 leads to periodic structural modulations and introduces additional electrons that undergo charge ordering on select Ti atoms to form a highly polarizable cloud oriented along the c-axis, hence, resulting in the colossolal optical anisotropy. Here, further enhancement of the colossal optical anisotropy to 2.5 in Sr1.143TiS3 is reported through control over the periodicity of the atomic-scale modulations. The role of structural modulations in tuning the optical properties in a series of SrxTiS3 compounds has been investigated using DFT calculations. The structural modulations arise from various stacking sequences of face-sharing TiS6 octahedra and twist-distorted trigonal prisms, and are found to be thermodynamically stable for x larger than 1 but smaller than 1.5. As x increases, an indirect-to-direct band gap transition is predicted for x equal to and larger than 1.143 along with an increased occupancy of Ti-dz2 states. Together, these two factors result in a theoretically predicted maximum birefriengence of 2.5 for Sr1.143TiS3. Single crystals of Sr1.143TiS3 were grown using a molten-salt flux method. Atomic-scale observations using scanning transmission electron microscopy confirm the feasibility of synthesizing SrxTiS3 with varied modulation periodicities. Overall, these findings demonstrate compositonal tunability of optical properties in SrxTiS3 compounds, and potentially in other hexagonal perovskites having structural modulations.

cond-mat.mtrl-sci↗

arXiv2024

Atomic Structure of Self-Buffered BaZr(S,Se)$_3$ Epitaxial Thin Film Interfaces

Understanding and controlling the growth of chalcogenide perovskite thin films through interface design is important for tailoring film properties. Here, the film and interface structure of BaZr(S,Se)$_3$ thin films grown on LaAlO$_3$ by molecular beam epitaxy and post-growth anion exchange is resolved using aberration-corrected scanning transmission electron microscopy. Epitaxial films are achieved from self-assembly of an interface ``buffer'' layer, which accommodates the large film/substrate lattice mismatch of nearly 40\% for the alloy film studied here. The self-assembled buffer layer, occurring for both the as-grown sulfide and post-selenization alloy films, is shown to have rock-salt-like atomic stacking akin to a Ruddlesden-Popper phase. Above this buffer, the film quickly transitions to the perovskite structure. Overall, these results provide insights into oxide-chalcogenide heteroepitaxial film growth, illustrating a process that yields relaxed, crystalline, epitaxial chalcogenide perovskite films that support ongoing studies of optoelectronic and device properties.

cond-mat.mtrl-sci↗

arXiv2024

Emergent Atomic Scale Polarisation Vortices in BaTiS3

Topological defects, such as vortices and skyrmions in magnetic and dipolar systems, can give rise to properties that are not observed in typical magnets and dielectrics. Here, we report the discovery of long-range ordered periodic dipole arrays of atomic-scale vortices and antivortices in the unconventional charge-density-wave (CDW) phase of BaTiS3, a quasi-1D chalcogenide. Synchrotron X-ray diffraction (XRD) reveals the presence of a multi-q ordering in BaTiS3 that confines vortex-vortex-antivortex polarisation triplets to the a-b plane with alternating handedness along the c-axis. The multi-q displacive distortions are characterised by three distinctive off-centre TiS6 configurations, whose ratios are independently confirmed by 47/49Ti solid-state nuclear magnetic resonance (SSNMR). Using first-principles calculations and phenomenological modelling, we show that the dipolar vortex unit cell in BaTiS3 arises from the coupling between multiple lattice instabilities arising from flat, soft phonon bands. This mechanism contrasts with classical dipolar textures in ferroelectric heterostructures that emerge from the competition between electrostatic and strain energies. The observation of dipolar vortices in BaTiS3 brings the ultimate scaling limit for real-space dipolar topological structures down to about a nanometre and unveils the intimate connection between crystal symmetry and real-space topology. Our work sets up zero-filling semiconducting materials with competing structural instabilities as a playground for realising and understanding quantum polarisation topologies.

cond-mat.mtrl-sci↗

arXiv2024

A Processing Route to Chalcogenide Perovskites Alloys with Tunable Band Gap via Anion Exchange

We demonstrate synthesis of BaZr(S,Se)3 chalcogenide perovskite alloys by selenization of BaZrS3 thin films. The anion-exchange process produces films with tunable composition and band gap without changing the orthorhombic perovskite crystal structure or the film microstructure. The direct band gap is tunable between 1.5 and 1.9 eV. The alloy films made in this way feature 100x stronger photoconductive response and a lower density of extended defects, compared to alloy films made by direct growth. The perovskite structure is stable in high-selenium-content thin films with and without epitaxy. The manufacturing-compatible process of selenization in H2Se gas may spur the development of chalcogenide perovskite solar cell technology.

cond-mat.mtrl-sci↗

arXiv2022

A new semiconducting perovskite alloy system made possible by gas-source molecular beam epitaxy

Optoelectronic technologies are based on families of semiconductor alloys. It is rare that a new semiconductor alloy family is developed to the point where epitaxial growth is possible; since the 1950s, this has happened approximately once per decade. Here we demonstrate epitaxial thin film growth of semiconducting chalcogenide perovskite alloys in the Ba-Zr-S-Se system by gas-source molecular beam epitaxy (MBE). We stabilize the full range y = 0 ... 3 of compositions BaZrS$_{(3-y)}$Se$_y$ in the perovskite structure, up to and including BaZrSe$_3$, by growing on BaZrS$_3$ epitaxial templates. The resulting films are environmentally stable and the direct band gap ($E_g$) varies strongly with Se content, as predicted by theory, covering the range $E_g$ = 1.9 ... 1.4 eV for $y$ = 0 ... 3. This creates possibilities for visible and near-infrared (VIS-NIR) optoelectronics, solid state lighting, and solar cells using chalcogenide perovskites.

cond-mat.mtrl-sci↗

arXiv2021

Making BaZrS3 chalcogenide perovskite thin films by molecular beam epitaxy

We demonstrate the making of BaZrS3 thin films by molecular beam epitaxy (MBE). BaZrS3 forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS6 octahedra. The single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS3 stoichiometry and an atomically-sharp interface with the LaAlO3 substrate. The films grow epitaxially via two, competing growth modes: buffered epitaxy, with a self-assembled interface layer that relieves the epitaxial strain, and direct epitaxy, with rotated-cube-on-cube growth that accommodates the large lattice constant mismatch between the oxide and the sulfide perovskites. This work sets the stage for developing chalcogenide perovskites as a family of semiconductor alloys with properties that can be tuned with strain and composition in high-quality epitaxial thin films, as has been long-established for other systems including Si-Ge, III-Vs, and II-Vs. The methods demonstrated here also represent a revival of gas-source chalcogenide MBE.

cond-mat.mtrl-sci↗

arXiv2019

Crystal growth and structural analysis of perovskite chalcogenide BaZrS$_3$ and Ruddlesden-Popper phase Ba$_3$Zr$_2$S$_7$

Perovskite chalcogenides are gaining substantial interest as an emerging class of semiconductors for optoelectronic applications. High quality samples are of vital importance to examine their inherent physical properties. We report the successful crystal growth of the model system, BaZrS$_3$ and its Ruddlesden-Popper phase Ba$_3$Zr$_2$S$_7$ by flux method. X-ray diffraction analyses showed space group of $Pnma$ with lattice constants of $a$ = 7.056(3) Å\/, $b$ = 9.962(4) Å\/, $c$ = 6.996(3) Å\/ for BaZrS$_3$ and $P4_2/mnm$ with $a$ = 7.071(2) Å\/, $b$ = 7.071(2) Å\/, $c$ = 25.418(5) Å\/ for Ba$_3$Zr$_2$S$_7$. Rocking curves with full-width-at-half-maximum of 0.011$^\circ$ for BaZrS$_3$ and 0.027$^\circ$ for Ba$_3$Zr$_2$S$_7$ were observed. Pole figure analysis, scanning transmission electron microscopy images and electron diffraction patterns also establish high quality of grown crystals. The octahedra tilting in the corner-sharing octahedra network are analyzed by extracting the torsion angles.

cond-mat.mtrl-sci↗

arXiv2018

Thermal Stability Study of Transition Metal Perovskite Sulfides

Transition metal perovskite chalcogenides, a class of materials with rich tunability in functionalities, are gaining increased attention as candidate materials for renewable energy applications. Perovskite oxides are considered excellent n-type thermoelectric materials. Compared to oxide counterparts, we expect the chalcogenides to possess more favorable thermoelectric properties such as lower lattice thermal conductivity and smaller band gap, making them promising material candidates for high temperature thermoelectrics. Thus, it is necessary to study the thermal properties of these materials in detail, especially thermal stability, to evaluate their potential. In this work, we report the synthesis and thermal stability study of five compounds, α-SrZrS$_3$, β-SrZrS$_3$, BaZrS$_3$, Ba$_2$ZrS$_4$, and Ba$_3$Zr$_2$S$_7$. These materials cover several structural types including distorted perovskite, needle-like, and Ruddlesden-Popper phases. Differential scanning calorimeter and thermo-gravimetric analysis measurements were performed up to 1200°C in air. Structural and chemical characterizations such as X-ray diffraction, Raman spectroscopy, and energy dispersive analytical X-ray spectroscopy were performed on all the samples before and after the heat treatment to understand the oxidation process. Our studies show that perovskite chalcogenides possess excellent thermal stability in air at least up to 600°C.

cond-mat.mtrl-sci↗

arXiv2018

Band-Gap Control via Structural and Chemical Tuning of Transition Metal Perovskite Chalcogenides

Transition metal perovskite chalcogenides (TMPC) are a new class of semiconductor materials with broad tunability of physical properties due to their chemical and structural flexibility. Theoretical calculations show that band gaps of TMPCs are tunable from Far IR to UV spectrum. Amongst these materials, more than a handful of materials have energy gap and very high absorption coefficients, which are appropriate for optoelectronic applications, especially solar energy conversion. Despite several promising theoretical predictions, very little experimental studies on their physical properties are currently available, especially optical properties. We report a new synthetic route towards high quality bulk ceramic TMPCs and systematic study of three phases, SrZrS3 in two different room temperature stabilized phases and one of BaZrS3. All three materials were synthesized with a catalyzed solid-state reaction process in sealed ampoules. Structural and chemical characterizations establish high quality of the samples, which is confirmed by the intense room temperature photoluminescence (PL) spectra showing direct band gaps around 1.53eV, 2.13eV and 1.81eV respectively. The potential of these materials for solar energy conversion was evaluated by measurement of PL quantum efficiency and estimate of quasi Fermi level splitting.

cond-mat.mtrl-sci↗