arXiv subjects

Ke He

Publications and source records attributed to Ke He.

147 records · Page 9Linked to original sources

arXiv2010

Landau Quantization of Massless Dirac Fermions in Topological Insulator

The recent theoretical prediction and experimental realization of topological insulators (TI) has generated intense interest in this new state of quantum matter. The surface states of a three-dimensional (3D) TI such as Bi_2Te_3, Bi_2Se_3 and Sb_2Te_3 consist of a single massless Dirac cones. Crossing of the two surface state branches with opposite spins in the materials is fully protected by the time reversal (TR) symmetry at the Dirac points, which cannot be destroyed by any TR invariant perturbation. Recent advances in thin-film growth have permitted this unique two-dimensional electron system (2DES) to be probed by scanning tunneling microscopy (STM) and spectroscopy (STS). The intriguing TR symmetry protected topological states were revealed in STM experiments where the backscattering induced by non-magnetic impurities was forbidden. Here we report the Landau quantization of the topological surface states in Bi_2Se_3 in magnetic field by using STM/STS. The direct observation of the discrete Landau levels (LLs) strongly supports the 2D nature of the topological states and gives direct proof of the nondegenerate structure of LLs in TI. We demonstrate the linear dispersion of the massless Dirac fermions by the square-root dependence of LLs on magnetic field. The formation of LLs implies the high mobility of the 2DES, which has been predicted to lead to topological magneto-electric effect of the TI.

cond-mat.mes-hall↗

arXiv2009

Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si

We use real-time reflection high energy electron diffraction intensity oscillation to establish the Te-rich growth dynamics of topological insulator thin films of Bi2Te3 on Si(111) substrate by molecular beam epitaxy. In situ angle resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy and ex situ transport measurements reveal that the as-grown Bi2Te3 films without any doping are an intrinsic topological insulator with its Fermi level intersecting only the metallic surface states. Experimentally, we find that the single-Dirac-cone surface state develops at a thickness of two quintuple layers (2 QL). Theoretically, we show that the interaction between the surface states from both sides of the film, which is determined by the penetration depth of the topological surface state wavefunctions, sets this lower thickness limit.

cond-mat.mes-hall↗

arXiv2009

Experimental demonstration of the topological surface states protected by the time-reversal symmetry

We report direct imaging of standing waves of the nontrivial surface states of topological insulator Bi$_2$Te$_3$ by using a low temperature scanning tunneling microscope. The interference fringes are caused by the scattering of the topological states off Ag impurities and step edges on the Bi$_2$Te$_3$(111) surface. By studying the voltage-dependent standing wave patterns, we determine the energy dispersion $E(k)$, which confirms the Dirac cone structure of the topological states. We further show that, very different from the conventional surface states, the backscattering of the topological states by nonmagnetic impurities is completely suppressed. The absence of backscattering is a spectacular manifestation of the time-reversal symmetry, which offers a direct proof of the topological nature of the surface states.

cond-mat.mes-hall↗