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Karim

Publications and source records attributed to Karim.

2 recordsLinked to original sources

SmartDCA superiority

Dollar-Cost Averaging (DCA) is a widely used technique to mitigate volatility in long-term investments of appreciating assets. However, the inefficiency of DCA arises from fixing the investment amount regardless of market conditions. In this paper, we present a more efficient approach that we name SmartDCA, which consists in adjusting asset purchases based on price levels. The simplicity of SmartDCA allows for rigorous mathematical analysis, enabling us to establish its superiority through the application of Cauchy-Schwartz inequality and Lehmer means. We further extend our analysis to what we refer to as $\rho$-SmartDCA, where the invested amount is raised to the power of $\rho$. We demonstrate that higher values of $\rho$ lead to enhanced performance. However, this approach may result in unbounded investments. To address this concern, we introduce a bounded version of SmartDCA, taking advantage of two novel mean definitions that we name quasi-Lehmer means. The bounded SmartDCA is specifically designed to retain its superiority to DCA. To support our claims, we provide rigorous mathematical proofs and conduct numerical analyses across various scenarios. The performance gain of different SmartDCA alternatives is compared against DCA using data from S\&P500 and Bitcoin. The results consistently demonstrate that all SmartDCA variations yield higher long-term investment returns compared to DCA.

q-fin.PM

Dopant redistribution and activation in Ga ion-implanted high Ge content SiGe by explosive crystallization during UV nanosecond pulsed laser annealing

Explosive crystallization (EC) is often observed when using nanosecond-pulsed melt laser annealing (MLA) in amorphous silicon (Si) and germanium (Ge). The solidification velocity in EC is so fast that a diffusion-less crystallization can be expected. In the contacts of advanced transistors, the active level at the metal/semiconductor Schottky interface must be very high to achieve a sub-10^{-9} ohm.cm2 contact resistivity, which has been already demonstrated by using the dopant surface segregation induced by MLA. However, the beneficial layer of a few nanometers at the surface may be easily consumed during subsequent contact cleaning and metallization. EC helps to address such kind of process integration issues, enabling the optimal positioning of the peak of the dopant chemical profile. However, there is a lack of experimental studies of EC in heavily-doped semiconductor materials. Furthermore, to the best of our knowledge, dopant activation by EC has never been experimentally reported. In this paper, we present dopant redistribution and activation by an EC process induced by UV nanosecond-pulsed MLA in heavily gallium (Ga) ion-implanted high Ge content SiGe. Based on the obtained results, we also highlight potential issues of integrating EC into real device fabrication processes and discuss how to manage them.

cond-mat.mtrl-sci